NTP27N06G

Mfr. #:: NTP27N06G
Hersteller:: ON Semiconductor
Beschreibung:: MOSFET N-CH 60V 27A TO220AB
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: NTP27N06G Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: NTP27N06G Datasheet NTP27N06G Datasheet (P4-P6)NTP27N06G Datasheet (P7-P8)
ECAD Model:

Produkteigenschaft
Attributwert

Tags: NTP27, NTP2, NTP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NTP27N06G Beschreibung

***et: Trans MOSFET N-CH 60V 27A 3-Pin(3+Tab) TO-220AB Rail

***r Electronics: Power Field-Effect Transistor, 27A I(D), 60V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:27A; On Resistance, Rds(on):46mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.8V ;RoHS Compliant: Yes

***nell: MOSFET, N, 60V, TO-220; Transistor type:Enhancement; Voltage, Vds typ:60V; Current, Id cont:27A; Resistance, Rds on:0.046ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:2.8V; Case style:TO-220 (SOT-78B); Power, Pd:88.2W; Termination Type:Through Hole; Transistor polarity:N; Voltage, Vds max:60V

***emi: Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 32 A, 35 mΩ, TO-220

***ment14 APAC: N CHANNEL MOSFET, 60V, 32A, TO-220; Tran; Transistor Polarity:N Channel; Continuous Drain Current Id:32A;

***ical: Trans MOSFET N-CH 60V 32A 3-Pin (3+Tab) TO-220AB Rail

***ure Electronics: N-Channel 60 V 40 mOhm Flange Mount Mosfet - TO-220

***r Electronics: Power Field-Effect Transistor, 32A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications..

***emi: Power MOSFET 30 Amps, 60 Volts, Logic Level

***ponent Stockers USA: 30 A 60 V 0.046 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***r Electronics: Power Field-Effect Transistor, 30A I(D), 60V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 60V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:60V; On Resistance Rds(on):46mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:1.7V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:30A; Package / Case:TO-220; Power Dissipation Pd:88.2W; Power Dissipation Pd:88.2W; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:1.7V; Voltage Vgs Rds on Measurement:5V

***i-Key: MOSFET N-CH 60V 29A TO-220AB

***et: PWR MOS ULTRAFET 60V/30A/0.042 OHMS N-CH LL TO-220AB

***ser: MOSFETs 20a, 60V, 0.043 Ohm Logic Level N-Ch

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:29A; On Resistance, Rds(on):0.04ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-20 ;RoHS Compliant: Yes

***ure Electronics: Single N-Channel 60 V 0.05 Ohms Flange Mount Power Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 60V 30A 3-Pin(3+Tab) TO-220AB

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N-CH, 60V, 30A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:88W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:

***emi: Power MOSFET, N-Channel, QFET®, 60 V, 30 A, 40 mΩ, TO-220

***et Europe: Trans MOSFET N-CH 60V 30A 3-Pin(3+Tab) TO-220AB Rail

***ure Electronics: N-Channel 60 V 40 mOhm Flange Mount Mosfet - TO-220

***nell: MOSFET, N-CH, 60V, 30A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.031ohm; Available until stocks are exhausted Alternative available

***r Electronics: Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 29A;TO-220AB;PD 68W;VGS +/-20V

***ure Electronics: Single N-Channel 55 V 0.04 Ohm 34 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***essParts.Net: INTERNATIONAL RECTIFIER IRFZ34NPBF / MOSFET N-CH 55V 29A TO-220AB

***fin: Transistor NPN Field Effect IRFZ34N/IRFZ34NPBF INTERNATIONAL RECTIFIER RoHS Ampere=26 V=55 TO220

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:29A; On Resistance, Rds(on):40mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 29 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 40 / Gate-Source Voltage V = 20 / Fall Time ns = 40 / Rise Time ns = 49 / Turn-OFF Delay Time ns = 31 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 68

***nell: MOSFET, N, 55V, 26A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:26A; Resistance, Rds On:0.04ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:100A; Device Marking:IRFZ34NPBF; Lead Spacing:2.54mm; No. of Pins:3; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation:56W; Power, Pd:56W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:2.7°C/W; Transistors, No. of:1; Voltage, Vds Max:55V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
NTP27N06G DISTI # NTP27N06GOS-ND	ON Semiconductor	MOSFET N-CH 60V 27A TO220AB RoHS: Compliant Min Qty: 450 Container: Tube	Limited Supply - Call
NTP27N06G	ON Semiconductor	RoHS: Not Compliant	66	1000:$0.4600 500:$0.4900 100:$0.5100 25:$0.5300 1:$0.5700
NTP27N06 DISTI # 863-NTP27N06	ON Semiconductor	MOSFET 60V 27A N-Channel RoHS: Not compliant	0
NTP27N06G DISTI # 863-NTP27N06G	ON Semiconductor	MOSFET 60V 27A N-Channel RoHS: Compliant	0

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: NTP21WF104J03RA OMO.#: OMO-NTP21WF104J03RA-1190	Neu und Original
	Mfr.#: NTP227M6.3TRD(40)F OMO.#: OMO-NTP227M6-3TRD-40-F-1190	Neu und Original
	Mfr.#: NTP22N06 OMO.#: OMO-NTP22N06-ON-SEMICONDUCTOR	MOSFET N-CH 60V 22A TO220AB
	Mfr.#: NTP22N06L OMO.#: OMO-NTP22N06L-ON-SEMICONDUCTOR	MOSFET N-CH 60V 22A TO220AB
	Mfr.#: NTP27N06L OMO.#: OMO-NTP27N06L-ON-SEMICONDUCTOR	MOSFET N-CH 60V 27A TO220AB
	Mfr.#: NTP2955 OMO.#: OMO-NTP2955-ON-SEMICONDUCTOR	MOSFET P-CH 60V 2.4A TO220AB
	Mfr.#: NTP2955V OMO.#: OMO-NTP2955V-1190	Neu und Original
	Mfr.#: NTP227M10TRD(25)F OMO.#: OMO-NTP227M10TRD-25-F-1190	Neu und Original
	Mfr.#: NTP227M4TRB(45)F OMO.#: OMO-NTP227M4TRB-45-F-1190	Neu und Original
	Mfr.#: NTP227M6.3TRD(55)F OMO.#: OMO-NTP227M6-3TRD-55-F-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3500
Menge eingeben:

Der aktuelle Preis von NTP27N06G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,69 $~~; ~~0,69 $~~

10: ~~0,66 $~~; ~~6,56 $~~

100: ~~0,62 $~~; ~~62,10 $~~

500: ~~0,59 $~~; ~~293,25 $~~

1000: ~~0,55 $~~; ~~552,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

NTP27 3
NTP2 18
NTP 368

NTP27N06G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes