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SIDR392DP-T1-GE3

SIDR392DP-T1-GE3
Mfr. #:
SIDR392DP-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds 20V Vgs PowerPAK SO-8DC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIDR392DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIDR392DP-T1-GE3 DatasheetSIDR392DP-T1-GE3 Datasheet (P4-P6)SIDR392DP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SIDR392DP-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SO-8DC-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
620 uOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
125 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
125 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SID
Transistortyp:
1 N-Channel1 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
125 S
Abfallzeit:
12 ns
Produktart:
MOSFET
Anstiegszeit:
23 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
41 ns
Typische Einschaltverzögerungszeit:
17 ns
Tags
SIDR3, SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
Teil # Mfg. Beschreibung Aktie Preis
SIDR392DP-T1-GE3
DISTI # V72:2272_21764846		Vishay IntertechnologiesSIDR392DP-T1-GE30
    SIDR392DP-T1-GE3
    DISTI # SIDR392DP-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CHAN 30V
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		On Order
    • 6000:$1.2285
    • 3000:$1.2439
    SIDR392DP-T1-GE3
    DISTI # SIDR392DP-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CHAN 30V
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 1000:$1.3761
    • 500:$1.6608
    • 100:$2.0214
    • 10:$2.5150
    • 1:$2.8000
    SIDR392DP-T1-GE3
    DISTI # SIDR392DP-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CHAN 30V
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 1000:$1.3761
    • 500:$1.6608
    • 100:$2.0214
    • 10:$2.5150
    • 1:$2.8000
    SIDR392DP-T1-GE3
    DISTI # 59AC7335    		Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET0
    • 10000:$1.1000
    • 6000:$1.1400
    • 4000:$1.1900
    • 2000:$1.3200
    • 1000:$1.3900
    • 1:$1.4800
    SIDR392DP-T1-GE3
    DISTI # 78AC6500    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 100A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.00047ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,PowerRoHS Compliant: Yes0
    • 500:$1.5500
    • 250:$1.6600
    • 100:$1.7700
    • 50:$1.9400
    • 25:$2.1100
    • 10:$2.2800
    • 1:$2.7500
    SIDR392DP-T1-GE3
    DISTI # 78-SIDR392DP-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8DC
    RoHS: Compliant    		0
    • 1:$2.7200
    • 10:$2.2600
    • 100:$1.7500
    • 500:$1.5300
    • 1000:$1.2700
    • 3000:$1.1800
    SIDR392DP-T1-GE3
    DISTI # 2932895    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 100A, 150DEG C, 125W0
    • 500:£1.1200
    • 250:£1.2000
    • 100:£1.2800
    • 10:£1.6600
    • 1:£2.2400
    SIDR392DP-T1-GE3
    DISTI # 2932895    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 100A, 150DEG C, 125W
    RoHS: Compliant    		0
    • 1000:$2.0100
    • 500:$2.1300
    • 250:$2.2500
    • 100:$2.4500
    • 10:$2.8300
    • 1:$3.2400
    Bild Teil # Beschreibung
    SIDR392DP-T1-GE3

    Mfr.#: SIDR392DP-T1-GE3

    OMO.#: OMO-SIDR392DP-T1-GE3

    		 MOSFET 30V Vds 20V Vgs PowerPAK SO-8DC
    SIDR392DP-T1-GE3

    Mfr.#: SIDR392DP-T1-GE3

    OMO.#: OMO-SIDR392DP-T1-GE3-VISHAY

    		 MOSFET N-CHAN 30V
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4500
    Menge eingeben:
    Der aktuelle Preis von SIDR392DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,72 $
    2,72 $
    10
    2,26 $
    22,60 $
    100
    1,75 $
    175,00 $
    500
    1,53 $
    765,00 $
    1000
    1,27 $
    1 270,00 $
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