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IGW50N65H5FKSA1

IGW50N65H5FKSA1
Mfr. #:
IGW50N65H5FKSA1
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors IGBT PRODUCTS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IGW50N65H5FKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IGW50N65H5FKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
IGBTs - Single
Serie
TrenchStopR
Verpackung
Rohr
Teil-Aliasnamen
IGW50N65H5 SP001001744
Gewichtseinheit
1.340411 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-247-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
PG-TO247-3
Aufbau
Single
Leistung max
305W
Reverse-Recovery-Time-trr
-
Strom-Kollektor-Ic-Max
80A
Spannungs-Kollektor-Emitter-Breakdown-Max
650V
IGBT-Typ
-
Strom-Kollektor-gepulster-Icm
150A
Vce-on-Max-Vge-Ic
2.1V @ 15V, 50A
Schaltenergie
520μJ (on), 180μJ (off)
Gate-Gebühr
120nC
Td-ein-aus-25°C
21ns/180ns
Testbedingung
400V, 25A, 12 Ohm, 15V
Pd-Verlustleistung
305 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 40 C
Kollektor-Emitter-Spannung-VCEO-Max
650 V
Kollektor-Emitter-Sättigungsspannung
1.65 V
Kontinuierlicher Kollektorstrom-bei-25-C
80 A
Gate-Emitter-Leckstrom
100 nA
Maximale Gate-Emitter-Spannung
20 V
Kontinuierlicher Kollektor-Strom-Ic-Max
56 A
Tags
IGW50N65H5, IGW50N65H, IGW50N65, IGW50N, IGW5, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, Infineon IGW50N65H5FKSA1 IGBT, 50 A 650 V, 3-Pin TO-247
***et Europe
Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube
***et
Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247
***ical
Trans IGBT Chip N-CH 650V 80A
***i-Key
IGBT 650V 80A 305W PG-TO247-3
***ronik
IGBT 650V 50A 1.6V TO247-3
***ark
IGBT, 650V, 50A, TO247-3
***ukat
650V 80A 305W TO247
***ment14 APAC
Prices include import duty and tax. IGBT, 650V, 50A, TO247-3; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:305W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C; Transistor Type:IGBT
***nell
IGBT, 650V, 50A, TO247-3; Corrente di Collettore CC:50A; Tensione Saturaz Collettore-Emettitore Vce(on):1.65V; Dissipazione di Potenza Pd:305W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Temperatura di Esercizio Min:-40°C; Tipo di Transistor:IGBT
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.
Teil # Mfg. Beschreibung Aktie Preis
IGW50N65H5FKSA1
DISTI # IGW50N65H5FKSA1-ND		Infineon Technologies AGIGBT 650V 80A 305W PG-TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		137In Stock
  • 1200:$2.2547
  • 720:$2.6734
  • 240:$3.1405
  • 10:$3.8330
  • 1:$4.2700
IGW50N65H5FKSA1
DISTI # IGW50N65H5FKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW50N65H5FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$2.1900
  • 242:$2.0900
  • 482:$1.9900
  • 1200:$1.8900
  • 2400:$1.8900
IGW50N65H5FKSA1
DISTI # 726-IGW50N65H5FKSA1		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant		328
  • 1:$4.0600
  • 10:$3.4500
  • 100:$2.9900
  • 250:$2.8300
  • 500:$2.5400
IGW50N65H5
DISTI # 726-IGW50N65H5-ES		Infineon Technologies AGIGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
RoHS: Compliant		300
  • 1:$4.0600
  • 10:$3.4500
  • 100:$2.9900
  • 250:$2.8300
  • 500:$2.5400
IGW50N65H5FKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor
RoHS: Compliant		30
  • 1000:$1.7400
  • 500:$1.8300
  • 100:$1.9000
  • 25:$1.9900
  • 1:$2.1400
IGW50N65H5FKSA1
DISTI # 1107157P		Infineon Technologies AGIGBT TRENCHSTOP N-CHANNEL 650V 50A TO247, TU1288
  • 400:£1.8650
  • 200:£1.9000
  • 80:£2.0530
  • 20:£2.2030
IGW50N65H5FKSA1
DISTI # IGW50N65H5		Infineon Technologies AG650V 80A 305W TO247
RoHS: Compliant		240
  • 1:€5.7000
  • 10:€2.7000
  • 50:€1.7000
  • 100:€1.6400
IGW50N65H5FKSA1
DISTI # 2363280		Infineon Technologies AGIGBT, 650V, 50A, TO247-3
RoHS: Compliant		0
  • 500:£1.8000
  • 250:£1.8800
  • 100:£1.9200
  • 10:£2.0700
  • 1:£2.7900
Bild Teil # Beschreibung
IGW50N65H5AXKSA1

Mfr.#: IGW50N65H5AXKSA1

OMO.#: OMO-IGW50N65H5AXKSA1

 IGBT Transistors IGBT PRODUCTS
IGW50N65F5AXKSA1

Mfr.#: IGW50N65F5AXKSA1

OMO.#: OMO-IGW50N65F5AXKSA1

 IGBT Transistors IGBT PRODUCTS
IGW50N60H3 , 2SC5183

Mfr.#: IGW50N60H3 , 2SC5183

OMO.#: OMO-IGW50N60H3-2SC5183-1190

 Neu und Original
IGW50N60T , 2SC5183-FB

Mfr.#: IGW50N60T , 2SC5183-FB

OMO.#: OMO-IGW50N60T-2SC5183-FB-1190

 Neu und Original
IGW50N60T,G50T60,

Mfr.#: IGW50N60T,G50T60,

OMO.#: OMO-IGW50N60T-G50T60--1190

 Neu und Original
IGW50N65F5AXKSA1

Mfr.#: IGW50N65F5AXKSA1

OMO.#: OMO-IGW50N65F5AXKSA1-INFINEON-TECHNOLOGIES

 IGBT 650V TO247-3
IGW50N65H5S

Mfr.#: IGW50N65H5S

OMO.#: OMO-IGW50N65H5S-1190

 Neu und Original
IGW50N65HS

Mfr.#: IGW50N65HS

OMO.#: OMO-IGW50N65HS-1190

 - Bulk (Alt: IGW50N65HS)
IGW50N60TXK

Mfr.#: IGW50N60TXK

OMO.#: OMO-IGW50N60TXK-1190

 Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IGW50N60TFKSA1)
IGW50N60H3

Mfr.#: IGW50N60H3

OMO.#: OMO-IGW50N60H3-126

 IGBT Transistors 600V 50A 333W
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von IGW50N65H5FKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,38 $
2,38 $
10
2,27 $
22,66 $
100
2,15 $
214,65 $
500
2,03 $
1 013,65 $
1000
1,91 $
1 908,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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