STW55NM60ND

STW55NM60ND
Mfr. #:
STW55NM60ND
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-channel 600 V FDMesh
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STW55NM60ND Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
STW55NM60ND DatasheetSTW55NM60ND Datasheet (P4-P6)STW55NM60ND Datasheet (P7-P9)STW55NM60ND Datasheet (P10-P12)
ECAD Model:
Mehr Informationen:
STW55NM60ND Mehr Informationen STW55NM60ND Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
51 A
Rds On - Drain-Source-Widerstand:
60 mOhms
Vgs - Gate-Source-Spannung:
25 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
350 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
20.15 mm
Länge:
15.75 mm
Serie:
STW55NM60ND
Transistortyp:
1 N-Channel
Breite:
5.15 mm
Marke:
STMicroelectronics
Abfallzeit:
96 ns
Produktart:
MOSFET
Anstiegszeit:
68 ns
Werkspackungsmenge:
600
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
188 ns
Typische Einschaltverzögerungszeit:
33 ns
Gewichtseinheit:
1.340411 oz
Tags
STW55NM6, STW55NM, STW55, STW5, STW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet Transistor, N Channel, 51 A, 600 V, 0.047 Ohm, 10 V, 4 V Rohs Compliant: Yes
***icroelectronics
N-channel 600 V, 0.047 Ohm, 51 A TO-247 FDmesh(TM) II Power MOSFET (with fast diode)
***ure Electronics
N-Channel 600 V 60 mOhm Flange Mount FDmesh II Power Mosfet - TO-247
***ical
Trans MOSFET N-CH 600V 51A Automotive 3-Pin(3+Tab) TO-247 Tube
Teil # Mfg. Beschreibung Aktie Preis
STW55NM60ND
DISTI # 497-7036-5-ND
STMicroelectronicsMOSFET N-CH 600V 51A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube
495In Stock
  • 120:$14.1079
  • 30:$16.0120
  • 10:$16.7040
  • 1:$18.1800
STW55NM60ND
DISTI # STW55NM60ND
STMicroelectronicsTrans MOSFET N-CH 600V 51A 3-Pin(3+Tab) TO-247 Tube (Alt: STW55NM60ND)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 250:€9.3500
  • 100:€9.6100
  • 50:€9.8600
  • 10:€10.1200
  • 5:€12.5400
  • 1:€14.9600
STW55NM60ND
DISTI # 94T3549
STMicroelectronicsMOSFET Transistor, N Channel, 51 A, 600 V, 0.047 ohm, 10 V, 4 V RoHS Compliant: Yes437
  • 500:$12.0600
  • 250:$12.6900
  • 100:$14.9200
  • 50:$15.7900
  • 25:$16.6600
  • 10:$17.2900
  • 1:$18.6100
STW55NM60ND
DISTI # 511-STW55NM60ND
STMicroelectronicsMOSFET N-channel 600 V FDMesh
RoHS: Compliant
592
  • 1:$17.3100
  • 10:$15.9200
  • 25:$15.2600
  • 100:$13.4400
  • 250:$12.7800
  • 500:$11.9600
STW55NM60ND
DISTI # 7610336P
STMicroelectronicsMOSFET N-CHANNEL 600V 51A TO247, TU552
  • 10:£12.3900
STW55NM60ND
DISTI # 7610336
STMicroelectronicsMOSFET N-CHANNEL 600V 51A TO247, EA21
  • 10:£12.3900
  • 1:£14.4200
STW55NM60ND
DISTI # STW55NM60ND
STMicroelectronicsTransistor: N-MOSFET,unipolar,600V,32A,350W,TO24736
  • 30:$10.5700
  • 10:$11.7200
  • 3:$14.6300
  • 1:$16.9900
STW55NM60ND
DISTI # 2098397
STMicroelectronicsMOSFET, N CH, 600V, 51A, TO 247
RoHS: Compliant
437
  • 500:$18.0200
  • 250:$19.2600
  • 100:$20.2500
  • 25:$23.0000
  • 10:$23.9900
  • 1:$26.0900
STW55NM60ND
DISTI # 2098397
STMicroelectronicsMOSFET, N CH, 600V, 51A, TO 247461
  • 100:£10.4700
  • 50:£11.1800
  • 10:£11.8800
  • 5:£13.4700
  • 1:£13.7200
STW55NM60NDSTMicroelectronicsMOSFET N-CH 600V 51A TO-247190
  • 1:$10.6500
  • 100:$9.6900
  • 500:$8.5200
  • 1000:$8.5200
Bild Teil # Beschreibung
IKQ75N120CS6XKSA1

Mfr.#: IKQ75N120CS6XKSA1

OMO.#: OMO-IKQ75N120CS6XKSA1

IGBT Transistors INDUSTRY 14
AS4C256M8D3LB-12BCN

Mfr.#: AS4C256M8D3LB-12BCN

OMO.#: OMO-AS4C256M8D3LB-12BCN

DRAM 2G 1.35V 256M x 8 DDR3 E-Temp
UCQ1V220MCL1GB

Mfr.#: UCQ1V220MCL1GB

OMO.#: OMO-UCQ1V220MCL1GB

Aluminum Electrolytic Capacitors - SMD 35V 22uf 20% Audio-SMT
CRCW1206100RJNEAC

Mfr.#: CRCW1206100RJNEAC

OMO.#: OMO-CRCW1206100RJNEAC

Thick Film Resistors - SMD 1/4Watt 100ohms 5% Commercial Use
IKQ75N120CS6XKSA1

Mfr.#: IKQ75N120CS6XKSA1

OMO.#: OMO-IKQ75N120CS6XKSA1-INFINEON-TECHNOLOGIES

IGBT 1200V 75A TO247-3-46
EEE-FK1C470SR

Mfr.#: EEE-FK1C470SR

OMO.#: OMO-EEE-FK1C470SR-PANASONIC

SMD AL ELECTROLYTIC, 16VDC, 47UF
CRCW1206100RJNEAC

Mfr.#: CRCW1206100RJNEAC

OMO.#: OMO-CRCW1206100RJNEAC-VISHAY-DALE

D25/CRCW1206-C 200 100R 5% ET1
AS4C256M8D3LB-12BCN

Mfr.#: AS4C256M8D3LB-12BCN

OMO.#: OMO-AS4C256M8D3LB-12BCN-ALLIANCE-MEMORY

IC DRAM 2G PARALLEL 78FBGA
Verfügbarkeit
Aktie:
342
Auf Bestellung:
2325
Menge eingeben:
Der aktuelle Preis von STW55NM60ND dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
17,31 $
17,31 $
10
15,92 $
159,20 $
25
15,26 $
381,50 $
100
13,44 $
1 344,00 $
250
12,78 $
3 195,00 $
500
11,96 $
5 980,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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