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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| HGTG11N120CND DISTI # HGTG11N120CND-ND | ON Semiconductor | IGBT 1200V 43A 298W TO247 RoHS: Compliant Min Qty: 1 Container: Tube | 368In Stock |
|
| HGTG11N120CN DISTI # HGTG11N120CN-ND | ON Semiconductor | IGBT 1200V 43A 298W TO247 RoHS: Compliant Min Qty: 300 Container: Tube | Limited Supply - Call | |
| HGTG11N120CND DISTI # HGTG11N120CND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG11N120CND) RoHS: Compliant Min Qty: 1 | Europe - 50 |
|
| HGTG11N120CND DISTI # HGTG11N120CND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG11N120CND) RoHS: Compliant Min Qty: 1 Container: Tube | Americas - 0 |
|
| HGTG11N120CND DISTI # 58K8900 | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K8900) RoHS: Compliant Min Qty: 1 Container: Bulk | Americas - 0 |
|
| HGTG11N120CND DISTI # 58K8900 | ON Semiconductor | SINGLE IGBT, 1.2KV, 43A,DC Collector Current:43A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes | 872 |
|
| HGTG11N120CND DISTI # 512-HGTG11N120CND | ON Semiconductor | IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde RoHS: Compliant | 190 |
|
| HGTG11N120CN DISTI # 512-HGTG11N120CN | ON Semiconductor | IGBT Transistors 43A 1200V N-Ch RoHS: Compliant | 0 | |
| HGTG11N120CN | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247 RoHS: Compliant | 1098 |
|
| HTGT11N120CN | Fairchild Semiconductor Corporation | RoHS: Not Compliant | 600 | |
| HGTG11N120CND DISTI # HGTG11N120CND | ON Semiconductor | Transistor: IGBT,1.2kV,22A,298W,TO247 | 6 |
|
| HGTG11N120CND | Fairchild Semiconductor Corporation | RoHS: Compliant | Europe - 200 | |
| HGTG11N120CND | Fairchild Semiconductor Corporation | INSTOCK | 1180 | |
| HGTG11N120CND DISTI # 1611490 | ON Semiconductor | IGBT, N RoHS: Compliant | 829 |
|
| HGTG11N120CND DISTI # 1611490 | ON Semiconductor | IGBT, N RoHS: Compliant | 1300 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: 1N1196 OMO.#: OMO-1N1196 |
Rectifiers Rectifier |
|
Mfr.#: 1N1200R OMO.#: OMO-1N1200R |
Rectifiers Rectifier |
|
|
Mfr.#: 1N1343A OMO.#: OMO-1N1343A |
Rectifiers Rectifier |
|
Mfr.#: 1N1734A OMO.#: OMO-1N1734A-1190 |
Neu und Original |
|
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Mfr.#: 1N1110UR-1 OMO.#: OMO-1N1110UR-1-1190 |
Neu und Original |
|
|
Mfr.#: 1N1346R OMO.#: OMO-1N1346R-1190 |
DO4 6 Amp Silicon Rectifie |
|
|
Mfr.#: 1N1424 OMO.#: OMO-1N1424-1190 |
Neu und Original |
|
|
Mfr.#: 1N1920 OMO.#: OMO-1N1920-1190 |
Neu und Original |
|
|
Mfr.#: 1N1185 OMO.#: OMO-1N1185-MICROSEMI |
Rectifiers Standard Rectifier (trr more than 500ns) |
|
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Mfr.#: 1N1342A OMO.#: OMO-1N1342A-MICROSEMI |
Rectifiers Standard Rectifier (trr more than 500ns) |