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SIHB22N60ET1-GE3

SIHB22N60ET1-GE3
Mfr. #:
SIHB22N60ET1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 600V Vds E Series D2PAK TO-263
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHB22N60ET1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB22N60ET1-GE3 DatasheetSIHB22N60ET1-GE3 Datasheet (P4-P6)SIHB22N60ET1-GE3 Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
21 A
Rds On - Drain-Source-Widerstand:
180 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Qg - Gate-Ladung:
57 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
227 W
Aufbau:
Single
Verpackung:
Spule
Serie:
E
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Abfallzeit:
35 ns
Produktart:
MOSFET
Anstiegszeit:
27 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
66 ns
Typische Einschaltverzögerungszeit:
18 ns
Gewichtseinheit:
0.077603 oz
Tags
SIHB22N60E, SIHB22N60, SIHB22, SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E-Series N-Channel 600 V 0.18 O 86 nC Surface Mount Power Mosfet - D2PAK
***S
new, original packaged
***ical
E Series Power MOSFET
***or
MOSFET N-CH 600V 21A TO263
***et
N-CHANNEL 600V
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:21A; On Resistance Rds(On):0.15Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
SIHB22N60ET1-GE3
DISTI # V72:2272_09219036		Vishay IntertechnologiesSIHB22N60ET1-GE30
    SIHB22N60ET1-GE3
    DISTI # SIHB22N60ET1-GE3CT-ND    		Vishay SiliconixMOSFET N-CH 600V 21A TO263
    RoHS: Not compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		785In Stock
    • 100:$2.6994
    • 10:$3.2950
    • 1:$3.6700
    SIHB22N60ET1-GE3
    DISTI # SIHB22N60ET1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CH 600V 21A TO263
    RoHS: Not compliant
    Min Qty: 1
    Container: Digi-Reel®    		785In Stock
    • 100:$2.6994
    • 10:$3.2950
    • 1:$3.6700
    SIHB22N60ET1-GE3
    DISTI # SIHB22N60ET1-GE3TR-ND    		Vishay SiliconixMOSFET N-CH 600V 21A TO263
    RoHS: Not compliant
    Min Qty: 800
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 5600:$1.7203
    • 2400:$1.7875
    • 1600:$1.8816
    • 800:$2.2310
    SIHB22N60ET1-GE3
    DISTI # SIHB22N60ET1-GE3    		Vishay IntertechnologiesN-CHANNEL 600V (Alt: SIHB22N60ET1-GE3)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 500:€1.6900
    • 1000:€1.6900
    • 50:€1.7900
    • 100:€1.7900
    • 25:€1.9900
    • 10:€2.4900
    • 1:€3.1900
    SIHB22N60ET1-GE3
    DISTI # SIHB22N60ET1-GE3    		Vishay IntertechnologiesN-CHANNEL 600V - Trays (Alt: SIHB22N60ET1-GE3)
    RoHS: Compliant
    Min Qty: 800
    Container: Tray    		Americas - 0
    • 8000:$1.5900
    • 4800:$1.6900
    • 3200:$1.7900
    • 1600:$1.9900
    • 800:$2.0900
    SIHB22N60ET1-GE3.
    DISTI # 61AC1922    		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:227W,No. of Pins:3Pins RoHS Compliant: Yes0
    • 8000:$1.5900
    • 4800:$1.6900
    • 3200:$1.7900
    • 1600:$1.9900
    • 1:$2.0900
    SIHB22N60ET1-GE3
    DISTI # 78-SIHB22N60ET1-GE3    		Vishay IntertechnologiesMOSFET 600V Vds E Series D2PAK TO-263
    RoHS: Compliant    		637
    • 1:$3.5800
    • 10:$2.9600
    • 100:$2.4400
    • 250:$2.3600
    • 500:$2.1200
    • 800:$1.7900
    • 2400:$1.7000
    • 4800:$1.6300
    Bild Teil # Beschreibung
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    DR74-820-R

    Mfr.#: DR74-820-R

    OMO.#: OMO-DR74-820-R

    		 Fixed Inductors 82uH 1.11A 0.345ohms
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    Mfr.#: FQB33N10LTM

    OMO.#: OMO-FQB33N10LTM-ON-SEMICONDUCTOR

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    		 RES SMD 51K OHM 1% 1W 2512
    DF22-2P-7.92DSA(05)

    Mfr.#: DF22-2P-7.92DSA(05)

    OMO.#: OMO-DF22-2P-7-92DSA-05--HIROSE

    		 Power to the Board HDR 2 POS 7.92mm Sol ST Thru-Hole Bag
    ZM4744A-GS08

    Mfr.#: ZM4744A-GS08

    OMO.#: OMO-ZM4744A-GS08-VISHAY

    		 Zener Diodes 15 Volt 1 Watt 5%
    DR74-820-R

    Mfr.#: DR74-820-R

    OMO.#: OMO-DR74-820-R-EATON

    		 Fixed Inductors 82uH 1.11A 0.345ohms
    Verfügbarkeit
    Aktie:
    637
    Auf Bestellung:
    2620
    Menge eingeben:
    Der aktuelle Preis von SIHB22N60ET1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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