SIR866DP-T1-GE3

Mfr. #:: SIR866DP-T1-GE3
Hersteller:: Vishay
Beschreibung:: MOSFET N-CH 20V 60A PPAK SO-8
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SIR866DP-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SIR866DP-T1-GE3 Datasheet SIR866DP-T1-GE3 Datasheet (P4-P6)SIR866DP-T1-GE3 Datasheet (P7-P9)SIR866DP-T1-GE3 Datasheet (P10-P12)SIR866DP-T1-GE3 Datasheet (P13)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: VISHAY

Produktkategorie: FETs - Einzeln

Serie: SIRxxxDP

Verpackung: Spule

Teil-Aliasnamen: SIR866DP-GE3

Gewichtseinheit: 0.017870 oz

Montageart: SMD/SMT

Paket-Koffer: SO-8

Technologie: Si

Anzahl der Kanäle: 1 Channel

Aufbau: Single Quad Drain Triple Source

Transistor-Typ: 1 N-Channel

Pd-Verlustleistung: 5.4 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 49 ns

Anstiegszeit: 23 ns

Vgs-Gate-Source-Spannung: 20 V

ID-Dauer-Drain-Strom: 60 A

Vds-Drain-Source-Breakdown-Voltage: 20 V

Rds-On-Drain-Source-Widerstand: 20.5 mOhms

Transistor-Polarität: N-Kanal

Typische-Ausschaltverzögerungszeit: 66 ns

Typische-Einschaltverzögerungszeit: 42 ns

Vorwärts-Transkonduktanz-Min: 78 S

Kanal-Modus: Erweiterung

Tags: SIR866, SIR86, SIR8, SIR

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SIR866DP-T1-GE3 DISTI # V72:2272_07432202	Vishay Intertechnologies	Trans MOSFET N-CH 20V 39A 8-Pin PowerPAK SO T/R RoHS: Compliant	2690	1000:$1.1862 500:$1.2274 250:$1.2517 100:$1.4112 25:$1.6928 10:$1.7006 1:$1.9350
SIR866DP-T1-GE3 DISTI # SIR866DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 20V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	898In Stock	500:$1.7052 100:$2.1924 10:$2.7280 1:$3.0200
SIR866DP-T1-GE3 DISTI # SIR866DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 20V 60A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call	3000:$1.2771
SIR866DP-T1-GE3 DISTI # SIR866DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 20V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SIR866DP-T1-GE3 DISTI # 29553281	Vishay Intertechnologies	Trans MOSFET N-CH 20V 39A 8-Pin PowerPAK SO T/R RoHS: Compliant	2690	1000:$1.1862 500:$1.2274 250:$1.2517 100:$1.4112 25:$1.6928 10:$1.7006 9:$1.9350
SIR866DP-T1-GE3 DISTI # SIR866DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 39A 8-Pin PowerPAK SO T/R (Alt: SIR866DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€2.0829 6000:€1.4589 12000:€1.2039 18000:€1.0689 30000:€1.0109
SIR866DP-T1-GE3 DISTI # 85W8933	Vishay Intertechnologies	N CHANNEL MOSFET, 20V, 60A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.3V , RoHS Compliant: Yes	0	1:$0.9560 25:$0.9560 50:$0.9560 100:$0.9560 250:$0.9560 500:$0.9560 1000:$0.9560
SIR866DP-T1-GE3. DISTI # 30AC0121	Vishay Intertechnologies	N-CHANNEL 20-V (D-S) MOSFET , ROHS COMPLIANT: YES	0
SIR866DP-T1-GE3 DISTI # 781-SIR866DP-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	5376	1:$2.6800 10:$2.2200 100:$1.7200 500:$1.5100 1000:$1.4300
SIR866DP-T1-GE3 DISTI # SIR866DP-GE3	Vishay Intertechnologies	N-Ch 20V 60A 5,4W 0,0019R PowerPakSO8 RoHS: Compliant	0	25:€1.1400 100:€1.0400 300:€0.9920 1000:€0.9550
SIR866DPT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 3000
SIR866DP-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	Americas -
SIR866DP-T1-GE3 DISTI # C1S803601298700	Vishay Intertechnologies	MOSFETs	2690	250:$1.2483 100:$1.4062 25:$1.6849 10:$1.6927
SIR866DP-T1-GE3 DISTI # 2459742	Vishay Intertechnologies	N CHANNEL MOSFET, 20V, 60A, SOIC RoHS: Compliant	0	3000:£1.2600
SIR866DP-T1-GE3 DISTI # 2478937	Vishay Intertechnologies	N CHANNEL MOSFET, 20V, 60A, SOIC, FULL REEL RoHS: Compliant	0	3000:$2.0300
SIR866DP-T1-GE3 DISTI # 2459742	Vishay Intertechnologies	N CHANNEL MOSFET, 20V, 60A, SOIC RoHS: Compliant	0	3000:$3.4900
SIR866DP-T1-GE3 DISTI # 2335404	Vishay Intertechnologies	MOSFET, N CH, 20V, 60A, POWERPAK SO RoHS: Compliant	0	1:$4.2500 10:$3.5200 100:$2.7200 500:$2.4000 1000:$2.2700 3000:$2.2700

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SIR866DP OMO.#: OMO-SIR866DP-1190	Neu und Original
	Mfr.#: SIR866DP-T1-E3 OMO.#: OMO-SIR866DP-T1-E3-1190	Neu und Original
	Mfr.#: SIR866DP-T1-GE3 OMO.#: OMO-SIR866DP-T1-GE3-VISHAY	MOSFET N-CH 20V 60A PPAK SO-8
	Mfr.#: SIR866DPT1GE3 OMO.#: OMO-SIR866DPT1GE3-1190	Power Field-Effect Transistor, 39A I(D), 20V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 5500
Menge eingeben:

Der aktuelle Preis von SIR866DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,48 $~~; ~~1,48 $~~

10: ~~1,41 $~~; ~~14,09 $~~

100: ~~1,34 $~~; ~~133,52 $~~

500: ~~1,26 $~~; ~~630,50 $~~

1000: ~~1,19 $~~; ~~1 186,80 $~~

Beginnen mit

SIR866 4
SIR86 10
SIR8 109
SIR 693

SIR866DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes