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A3G20S250-01SR3

A3G20S250-01SR3
Mfr. #:
A3G20S250-01SR3
Hersteller:
NXP Semiconductors
Beschreibung:
RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
A3G20S250-01SR3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
A3G20S250-01SR3 Mehr Informationen A3G20S250-01SR3 Product Details
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-MOSFET-Transistoren
Polarität des Transistors:
N-Kanal
Technologie:
GaN-Si
Id - Kontinuierlicher Drainstrom:
250 mA
Vds - Drain-Source-Durchbruchspannung:
150 V
Gewinnen:
18.2 dB
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
NI-400S-2
Verpackung:
Spule
Arbeitsfrequenz:
1800 MHz to 2200 MHz
Serie:
A3G20S250
Typ:
HF-Leistungs-MOSFET
Marke:
NXP Semiconductors
Anzahl der Kanäle:
1 Channel
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
250
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
- 8 V
Vgs th - Gate-Source-Schwellenspannung:
- 2.3 V
Teil # Aliase:
935377832118
Tags
A3G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
RF Power GaN Portfolio
NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.
Bild Teil # Beschreibung
A3G20S250-01SR3

Mfr.#: A3G20S250-01SR3

OMO.#: OMO-A3G20S250-01SR3

 RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von A3G20S250-01SR3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
94,46 $
94,46 $
5
91,41 $
457,05 $
10
89,58 $
895,80 $
25
83,94 $
2 098,50 $
100
81,05 $
8 105,00 $
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