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AS4C128M16MD2-25BCN

AS4C128M16MD2-25BCN
Mfr. #:
AS4C128M16MD2-25BCN
Hersteller:
Alliance Memory
Beschreibung:
IC DRAM 2G PARALLEL 134FBGA
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
AS4C128M16MD2-25BCN Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
AS4C128M16MD2-25BCN Mehr Informationen
Produkteigenschaft
Attributwert
Tags
AS4C128M16M, AS4C128M1, AS4C12, AS4C1, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***metry Electronics
DDR2 2GB 400MHz 800Mbps/pin 1.2V/1.8V 128M x 16 134-ball FBGA (10x11.5x1.0)
***et Europe
DRAM 2G 1.2V/1.8V 400MHz 128Mx16 Mobile DDR2
DDR2 SDRAM
Alliance Memory DDR2 SDRAM is designed to comply with DDR2 SDRAM key features. Features such as posted CAS# with additive latency, Write latency=Read latency -1 and On-Die Termination (ODT). All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS#) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in RAS #, CAS# multiplexing style.
Mobile DDR
Alliance Memory Mobile DDR is fabricated with high-performance CMOS technology. Mobile DDR uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O balls. The range of operating frequencies, programmable burst lengths, and programmable latencies allow the same device to be useful for a variety of high-bandwidth and high-performance memory system applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
AS4C128M16MD2-25BCN
DISTI # 1450-1403-ND		Alliance Memory IncIC DRAM 2G PARALLEL 134FBGA
RoHS: Not compliant
Min Qty: 128
Container: Tray		Limited Supply - Call
    AS4C128M16MD2-25BCNTR
    DISTI # AS4C128M16MD2-25BCNTR-ND    		Alliance Memory IncIC DRAM 2G PARALLEL 134FBGA
    RoHS: Not compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		Limited Supply - Call
      AS4C128M16MD2-25BCN
      DISTI # 913-128M16MD225BCN      		Alliance Memory IncDRAM 2G 1.2V/1.8V 400MHz 128Mx16 Mobile DDR2
      RoHS: Compliant      		299
      • 1:$7.0000
      • 10:$6.3900
      • 25:$6.2600
      • 50:$6.2200
      • 100:$5.5800
      • 250:$5.5600
      • 500:$5.2100
      • 1000:$4.9900
      AS4C128M16MD2-25BCNTR
      DISTI # 913-128M16MD225BCNT      		Alliance Memory IncDRAM 2G 1.2V/1.8V 400MHz 128Mx16 Mobile DDR2
      RoHS: Compliant      		0
        AS4C128M16MD2-25BCNAlliance Memory Inc2G128M X 16LPDDR21.2V134ball BGA COMMERCIAL TEMP912
          AS4C128M16MD2-25BCNTRAlliance Memory IncSDRAM 2G 1.2V/1.8V 400MHz 128Mx16 Mobile DDR21000
            Bild Teil # Beschreibung
            AS4C128M16D2A-25BINTR

            Mfr.#: AS4C128M16D2A-25BINTR

            OMO.#: OMO-AS4C128M16D2A-25BINTR

            		 DRAM DDR2, 2GB, 1.8V 400MHz,256M x 8
            AS4C128M16D2-25BCNTR

            Mfr.#: AS4C128M16D2-25BCNTR

            OMO.#: OMO-AS4C128M16D2-25BCNTR

            		 DRAM 2G 1.8V 400Mhz 128M x 16 DDR2
            AS4C128M16D3B-12BCNTR

            Mfr.#: AS4C128M16D3B-12BCNTR

            OMO.#: OMO-AS4C128M16D3B-12BCNTR

            		 DRAM 2G 1.5V 800MHz 128M x 16 DDR3
            AS4C128M16MD2A-25BINTR

            Mfr.#: AS4C128M16MD2A-25BINTR

            OMO.#: OMO-AS4C128M16MD2A-25BINTR

            		 DRAM 2G 1.2V/1.8V 32Mx32 Mobile DDR2 E-Temp
            AS4C128M16D3A-12BINTR

            Mfr.#: AS4C128M16D3A-12BINTR

            OMO.#: OMO-AS4C128M16D3A-12BINTR

            		 DRAM 2G 1.5V 800MHz 128M x 16 DDR3
            AS4C128M16D3A-12BIN

            Mfr.#: AS4C128M16D3A-12BIN

            OMO.#: OMO-AS4C128M16D3A-12BIN-ALLIANCE-MEMORY

            		 IC DRAM 2G PARALLEL 96FBGA
            AS4C128M16D3LA-12BANTR

            Mfr.#: AS4C128M16D3LA-12BANTR

            OMO.#: OMO-AS4C128M16D3LA-12BANTR-ALLIANCE-MEMORY

            		 IC DRAM 2G PARALLEL 96FBGA Automotive, AEC-Q100
            AS4C128M16D3LB-12BIN

            Mfr.#: AS4C128M16D3LB-12BIN

            OMO.#: OMO-AS4C128M16D3LB-12BIN-ALLIANCE-MEMORY

            		 IC DRAM 2G PARALLEL 96FBGA
            AS4C128M16D3B-12BCNTR

            Mfr.#: AS4C128M16D3B-12BCNTR

            OMO.#: OMO-AS4C128M16D3B-12BCNTR-ALLIANCE-MEMORY

            		 IC DRAM 2G PARALLEL 96FBGA
            AS4C128M16D3LA-12BINTR

            Mfr.#: AS4C128M16D3LA-12BINTR

            OMO.#: OMO-AS4C128M16D3LA-12BINTR-ALLIANCE-MEMORY

            		 IC DRAM 2G PARALLEL 96FBGA
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            5500
            Menge eingeben:
            Der aktuelle Preis von AS4C128M16MD2-25BCN dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
            Referenzpreis (USD)
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            Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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