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SIZ200DT-T1-GE3

SIZ200DT-T1-GE3
Mfr. #:
SIZ200DT-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET 30V Vds 20/-16V Vgs PowerPAIR 3x3S
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIZ200DT-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIZ200DT-T1-GE3 DatasheetSIZ200DT-T1-GE3 Datasheet (P4-P6)SIZ200DT-T1-GE3 Datasheet (P7-P9)SIZ200DT-T1-GE3 Datasheet (P10-P12)SIZ200DT-T1-GE3 Datasheet (P13)
ECAD Model:
Mehr Informationen:
SIZ200DT-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAIR-3x3S-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
61 A, 60 A
Rds On - Drain-Source-Widerstand:
5.5 mOhms, 5.8 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.1 V
Vgs - Gate-Source-Spannung:
- 16 V, 20 V
Qg - Gate-Ladung:
28 nC, 30 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
33 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
GRÖSSE
Transistortyp:
2 N-Channel
Marke:
Vishay
Vorwärtstranskonduktanz - Min:
118 S, 105 S
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
5 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
23 ns
Typische Einschaltverzögerungszeit:
11 ns
Tags
SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SIZ200DT-T1-GE3
DISTI # V36:1790_22587803		Vishay IntertechnologiesDual N-Channel 30-V (D-S) MOSFETs Symm. PowerPAIR 3 x 3 1G sh ch , 5.5 m @ 10V m @ 7.5V 7.3 m @ 4.5V0
    SIZ200DT-T1-GE3
    DISTI # V99:2348_22587803    		Vishay IntertechnologiesDual N-Channel 30-V (D-S) MOSFETs Symm. PowerPAIR 3 x 3 1G sh ch , 5.5 m @ 10V m @ 7.5V 7.3 m @ 4.5V0
      SIZ200DT-T1-GE3
      DISTI # SIZ200DT-T1-GE3CT-ND      		Vishay SiliconixMOSFET N-CH DUAL 30V
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		100In Stock
      • 1000:$0.5353
      • 500:$0.6700
      • 100:$0.8550
      • 10:$1.0740
      • 1:$1.2100
      SIZ200DT-T1-GE3
      DISTI # SIZ200DT-T1-GE3DKR-ND      		Vishay SiliconixMOSFET N-CH DUAL 30V
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		100In Stock
      • 1000:$0.5353
      • 500:$0.6700
      • 100:$0.8550
      • 10:$1.0740
      • 1:$1.2100
      SIZ200DT-T1-GE3
      DISTI # SIZ200DT-T1-GE3TR-ND      		Vishay SiliconixMOSFET N-CH DUAL 30V
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 3000:$0.4871
      SIZ200DT-T1-GE3
      DISTI # SIZ200DT-T1-GE3      		Vishay Intertechnologies- Tape and Reel (Alt: SIZ200DT-T1-GE3)
      RoHS: Compliant
      Min Qty: 6000
      Container: Reel      		Americas - 0
      • 6000:$0.4319
      • 12000:$0.4189
      • 18000:$0.4019
      • 30000:$0.3909
      • 60000:$0.3799
      SIZ200DT-T1-GE3
      DISTI # 81AC3511      		Vishay IntertechnologiesDUAL N-CHANNEL 30-V (D-S) MOSFET0
      • 2500:$0.4100
      • 1000:$0.4460
      • 500:$0.5170
      • 100:$0.5910
      • 50:$0.6690
      • 25:$0.7370
      • 10:$0.8050
      • 1:$1.0400
      SIZ200DT-T1-GE3
      DISTI # 94AC9390      		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 61A, POWERPAIR,Transistor Polarity:N Channel,Continuous Drain Current Id:61A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0045ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.4V,Power RoHS Compliant: Yes50
      • 1000:$0.3570
      • 500:$0.4520
      • 250:$0.4890
      • 100:$0.5260
      • 50:$0.5790
      • 25:$0.6320
      • 10:$0.6850
      • 1:$0.8320
      SIZ200DT-T1-GE3
      DISTI # 78-SIZ200DT-T1-GE3      		Vishay IntertechnologiesMOSFET 30V Vds 20/-16V Vgs PowerPAIR 3x3S
      RoHS: Compliant      		50
      • 1:$1.0300
      • 10:$0.8560
      • 100:$0.6570
      • 500:$0.5650
      • 1000:$0.4460
      • 3000:$0.4160
      SIZ200DT-T1-GE3
      DISTI # 2990577      		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 61A, POWERPAIR
      RoHS: Compliant      		50
      • 5000:$0.5400
      • 1000:$0.5800
      • 500:$0.7100
      • 250:$0.7900
      • 100:$0.8600
      • 25:$1.1300
      • 5:$1.2300
      SIZ200DT-T1-GE3
      DISTI # 2990577      		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 61A, POWERPAIR
      RoHS: Compliant      		50
      • 500:£0.3990
      • 250:£0.4430
      • 100:£0.4830
      • 25:£0.6370
      • 5:£0.6920
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      		 Switching Voltage Regulators 36V 300mA Synchronous
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      		 Switching Voltage Regulators Buck DC/DC Converter
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      		 Coaxial Cables 30AWG FEP, 50 OHM COAX, PRICED PER FT
      IPD60R360P7SAUMA1

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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4000
      Menge eingeben:
      Der aktuelle Preis von SIZ200DT-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,03 $
      1,03 $
      10
      0,86 $
      8,56 $
      100
      0,66 $
      65,70 $
      500
      0,56 $
      282,50 $
      1000
      0,45 $
      446,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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