DI9956T

Mfr. #:: DI9956T
Hersteller:: Diodes Incorporated
Beschreibung:: MOSFET 2N-CH 30V 3.7A 8-SOIC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: DI9956T Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: Eingebaute Dioden

Produktkategorie: FETs - Arrays

Serie: -

Verpackung: Band & Spule (TR)

Paket-Koffer: 8-SOIC (0.154", 3.90mm Width)

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Lieferanten-Geräte-Paket: 8-SOP

FET-Typ: 2 N-Channel (Dual)

Leistung max: 2W

Drain-zu-Source-Spannung-Vdss: 30V

Eingangskapazität-Ciss-Vds: 320pF @ 10V

FET-Funktion: Logik-Level-Gate

Strom-Dauer-Drain-Id-25°C: 3.7A

Rds-On-Max-Id-Vgs: 80 mOhm @ 2.2A, 10V

Vgs-th-Max-Id: 2.8V @ 250μA

Gate-Lade-Qg-Vgs: 27nC @ 10V

Tags: DI9956, DI995, DI99, DI9

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DI9956T Beschreibung

***i-Key: MOSFET 2N-CH 30V 3.7A 8-SOIC

***(Formerly Allied Electronics): MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.07Ohm; ID -4.6A; SO-8; PD 2.5W; VGS +/-20V

*** Source Electronics: Trans MOSFET P-CH Si 30V 4.6A 8-Pin SOIC N T/R / MOSFET P-CH 30V 4.6A 8-SOIC

***eco: Transistor MOSFET P Channel 30 Volt 4.6 Amp 8 Pin SOIC

***ure Electronics: Single P-Channel 30 V 0.13 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8

***ter Electronics: MOSFET, P-CHANNEL, -30V, -4.6A, 70 MOHM, 27 NC QG, SO-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***ark: P CHANNEL MOSFET, -30V, 4.6A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***ure Electronics: Dual N & P-Channel 30 V 65 mOhm Surface Mount Field Effect Transistor - SOIC-8

***Yang: Trans MOSFET N/P-CH 30V 3.9A/3.5A 8-Pin SOIC N T/R - Tape and Reel

***emi: Dual N & P Channel Enhancement Mode Field Effect Transistor

***r Electronics: Power Field-Effect Transistor, 3.9A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***rchild Semiconductor: These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

***emi: Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30V , 4A, 56mΩ

***ure Electronics: N-Channel 30 V 56 mOhm Integrated PowerTrench® Mosfet SOIC-8

***et: Trans MOSFET N-CH 30V 4A 8-Pin SOIC N T/R

***ment14 APAC: MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):56mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:225pF; Current Id Max:4A; On State Resistance Max:56mohm; Package / Case:SOIC; Pin Configuration:A(1&2), S(3), G(4), C(7&8), D(6&5); Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:20A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V

***rchild Semiconductor: The FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO- 8 package.This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.

***et: Transistor MOSFET Array Dual P-CH 30V 4.4A 8-Pin SOIC T/R

***ure Electronics: Dual P-Channel 30 V 0.07 Ohm Enhancement Mode MOSFET - SOIC-8

***(Formerly Allied Electronics): MOSFET Dual P-Channel 30V 4.4A SOIC8

***des Inc SCT: Dual P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

***ical: Trans MOSFET P-CH 30V 4A 8-Pin SOIC N T/R

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-4A; On Resistance, Rds(on):65mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***rchild Semiconductor: These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

***ment14 APAC: MOSFET, DUAL, PP, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.6V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-4A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:15A; Row Pitch:6.3mm; SMD Marking:NDS8947; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:-10V

***ark: Dual Mosfet, Dual P Channel, -4 A, -30 V, 0.07 Ohm, 10 V, 1 V Rohs Compliant: Yes

***(Formerly Allied Electronics): MOSFET, Power;Dual P-Ch;VDSS 30V;RDS(ON) 0.07Ohm;ID 4A;SO-8;PD 2W;VGS +/-16V;-55

***ure Electronics: Dual P-Channel 30 V 0.08 Ohm Surface Mount STripFET MosFet - SOIC-8

***icroelectronics: DUAL P-CHANNEL 30V - 0.07 OHM - 4A SO-8 STripFET POWER MOSFET

***nell: MOSFET, PP CH, 30V, 4A, 8SOIC; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -4A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.07ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
DI9956T DISTI # 981-DI9956T-CHP	Diodes Incorporated	MOSFET 2N-CH 30V 3.7A 8-SOIC RoHS: Not compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$1.2180
DI9956T DISTI # DI9956CT-ND	Diodes Incorporated	MOSFET 2N-CH 30V 3.7A 8-SOIC RoHS: Not compliant Min Qty: 1 Container: Cut Tape (CT)	1294In Stock	500:$1.2545 100:$1.2904 10:$1.4520 1:$1.7300
DI9956T DISTI # DI9956TR-ND	Diodes Incorporated	MOSFET 2N-CH 30V 3.7A 8-SOIC RoHS: Not compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: DI9000XBCZ OMO.#: OMO-DI9000XBCZ-1190	Neu und Original
	Mfr.#: DI9002BBCZ OMO.#: OMO-DI9002BBCZ-1190	Neu und Original
	Mfr.#: DI9004 OMO.#: OMO-DI9004-1190	Neu und Original
	Mfr.#: DI9400 OMO.#: OMO-DI9400-1190	Neu und Original
	Mfr.#: DI9410 OMO.#: OMO-DI9410-1190	Neu und Original
	Mfr.#: DI9546REH OMO.#: OMO-DI9546REH-1190	Neu und Original
	Mfr.#: DI9802 OMO.#: OMO-DI9802-1190	Neu und Original
	Mfr.#: DI9942T OMO.#: OMO-DI9942T-DIODES	MOSFET N/P-CH 20V 2.5A 8-SOIC
	Mfr.#: DI9945T OMO.#: OMO-DI9945T-DIODES	MOSFET 2N-CH 60V 3.5A 8-SOIC
	Mfr.#: DI9956T-XN OMO.#: OMO-DI9956T-XN-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2500
Menge eingeben:

Der aktuelle Preis von DI9956T dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,83 $~~; ~~1,83 $~~

10: ~~1,74 $~~; ~~17,36 $~~

100: ~~1,64 $~~; ~~164,43 $~~

500: ~~1,55 $~~; ~~776,50 $~~

1000: ~~1,46 $~~; ~~1 461,60 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

DI9956 4
DI995 6
DI99 9
DI9 38

DI9956T

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes