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ZXMN2A02N8TA

ZXMN2A02N8TA
Mfr. #:
ZXMN2A02N8TA
Hersteller:
Diodes Incorporated
Beschreibung:
Darlington Transistors MOSFET 20V N Chnl UMOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
ZXMN2A02N8TA Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
ZXMN2A02N8TA DatasheetZXMN2A02N8TA Datasheet (P4-P6)ZXMN2A02N8TA Datasheet (P7-P8)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
30000ZETEX
Produktkategorie
FETs - Einzeln
Serie
ZXMN2A
Verpackung
Spule
Gewichtseinheit
0.002610 oz
Montageart
SMD/SMT
Paket-Koffer
SO-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single Quad Drain Triple Source
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
1.56 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
10 ns
Anstiegszeit
10 ns
Vgs-Gate-Source-Spannung
12 V
ID-Dauer-Drain-Strom
10.2 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Rds-On-Drain-Source-Widerstand
40 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
33.3 ns
Typische-Einschaltverzögerungszeit
7.9 ns
Kanal-Modus
Erweiterung
Tags
ZXMN2A02N, ZXMN2A02, ZXMN2A0, ZXMN2A, ZXMN2, ZXMN, ZXM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***C
Trans MOSFET N-CH 20V 10.2A 8-Pin SOIC T/R Trans MOSFET N-CH 20V 10.2A 8-Pin SOIC T/R
***ure Electronics
ZXMN2A02 Series N-Channel 20 V 10.2 A 2.5 W Mosfet - SOIC-8
***S
French Electronic Distributor since 1988
***emi
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -11A, 14mΩ
***Yang
Trans MOSFET P-CH 20V 11A 8-Pin SOIC N T/R - Tape and Reel
***enic
20V 11A 14m´Î@4.5V11A 2.5W 1.5V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS
***ment14 APAC
MOSFET, P, SMD, 8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-11A; Source Voltage Vds:-20V; On Resistance
***rchild Semiconductor
This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).
***nell
MOSFET, P, SMD, 8-SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -11A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -830mV; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 11A; Operating Temperature Min: -55°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -830mV; Voltage Vgs Rds on Measurement: -4.5V
***(Formerly Allied Electronics)
IRF7401PBF N-channel MOSFET Transistor; 8.7 A; 20 V; 8-Pin SOIC
***ure Electronics
Single N-Channel 20 V 0.022 Ohm 48 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R / MOSFET N-CH 20V 8.7A 8-SOIC
***nell
N CHANNEL MOSFET, 20V, 8.7A, SOIC; Trans; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.7A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.022ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vg
***roFlash
Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 8.7 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 22 / Gate-Source Voltage V = 12 / Fall Time ns = 92 / Rise Time ns = 72 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
***emi
Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ
***Yang
Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel
***ure Electronics
Dual N-Channel 20 V 14 mOhm PowerTrench Mosfet - SOIC-8
***ponent Sense
Mosfet Array 2 N-Channel (Dual) 20V 9.4A 900mW Surface Mount 8-SOIC
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:9.4A; On Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SO-8 ;RoHS Compliant: Yes
***rchild Semiconductor
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***nell
MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 9.4A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Continuous Drain Current Id, N Channel: 9.4A; Current Id Max: 9.4A; Drain Source Voltage Vds, N Channel: 20V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.01ohm; Operating Temperature Min: -55°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 20V; Voltage Vgs Max: 1V; Voltage Vgs Rds on Measurement: 4.5V
***emi
Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ
***Yang
Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel
***ure Electronics
Dual N-Channel 20 V 14 mOhm PowerTrench Mosfet -SOIC-8
***enic
20V 9.4A 14m´Î@4.5V9.4A 900mW 1.5V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS
***ment14 APAC
MOSFET, NN; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:9.4A; Current Id Max:9.4A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):14mohm; Package / Case:SO-8; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***itex
Transistor: 2xN-MOSFET; unipolar; 20V; 8A; 0.018ohm; 2W; -55+150 deg.C; SMD; SO8
***ure Electronics
Dual N-Channel 20 V 0.018 Ohm 3.1 W Surface Mount Power Mosfet - SOIC-8
***et Europe
Transistor MOSFET Array Dual N-CH 20V 8A 8-Pin SOIC T/R
***enic
20V 8A 2W 18m´Î@4.5V8.3A 1.5V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS
***ment14 APAC
DUAL N CHANNEL MOSFET, 20V, SOIC; Transi; DUAL N CHANNEL MOSFET, 20V, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:8A; Drain Source Voltage Vds, N Channel:20V; On Resistance Rds(on), N Channel:0.015ohm; Rds(on) Test Voltage Vgs:12V
***ark
Channel Type:dual N Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:8A; Continuous Drain Current Id P Channel:-; No. Of Pins:8Pins; Product Range:- Rohs Compliant: No
***et Japan
Transistor MOSFET Array Dual P-CH 20V 9A 8-Pin SOIC T/R
***ure Electronics
Dual P-Channel 20 V 0.018 Ohm 42 nC HEXFET® Power Mosfet - SOIC-8
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.1 mm); Dual P-Channel MOSFET
*** Stop Electro
Power Field-Effect Transistor, 9A I(D), 20V, 0.018ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.018ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V;
Teil # Mfg. Beschreibung Aktie Preis
ZXMN2A02N8TA
DISTI # ZXMN2A02N8TR-ND		Diodes IncorporatedMOSFET N-CH 20V 8.3A 8-SOIC
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)		500In Stock
  • 500:$0.8841
ZXMN2A02N8TA
DISTI # ZXMN2A02N8CT-ND		Diodes IncorporatedMOSFET N-CH 20V 8.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		249In Stock
  • 100:$1.1023
  • 10:$1.4140
  • 1:$1.5800
ZXMN2A02N8TA
DISTI # ZXMN2A02N8DKR-ND		Diodes IncorporatedMOSFET N-CH 20V 8.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Limited Supply - Call
    ZXMN2A02N8TA
    DISTI # ZXMN2A02N8DI-ND    		Diodes IncorporatedMOSFET N-CH 20V 8.3A 8-SOIC
    RoHS: Compliant
    Min Qty: 500
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 500:$0.8841
    ZXMN2A02N8TA
    DISTI # 522-ZXMN2A02N8TA    		Diodes IncorporatedMOSFET 20V N Chnl UMOS
    RoHS: Compliant    		416
    • 1:$1.3900
    • 10:$1.1900
    • 100:$0.9100
    • 500:$0.8040
    ZXMN2A02N8TAZetex / Diodes Inc 356
      ZXMN2A02N8TAZetex / Diodes Inc 7159
        Bild Teil # Beschreibung
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        		 Darlington Transistors MOSFET 20V N-Chnl UMOS
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        5000
        Menge eingeben:
        Der aktuelle Preis von ZXMN2A02N8TA dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,65 $
        0,65 $
        10
        0,61 $
        6,14 $
        100
        0,58 $
        58,17 $
        500
        0,55 $
        274,70 $
        1000
        0,52 $
        517,10 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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