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FGY60T120SQDN

FGY60T120SQDN
Mfr. #:
FGY60T120SQDN
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors IGBT 1200V 60A UFS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FGY60T120SQDN Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FGY60T120SQDN Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
1.7 V
Maximale Gate-Emitter-Spannung:
25 V
Kontinuierlicher Kollektorstrom bei 25 C:
120 A
Pd - Verlustleistung:
517 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
120 A
Marke:
ON Semiconductor
Gate-Emitter-Leckstrom:
200 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
450
Unterkategorie:
IGBTs
Tags
FGY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
FGY60T120SQDN 1200V 60A Ultra Field Stop IGBT
ON Semiconductor FGY60T120SQDN 1200V 60A Ultra Field Stop IGBT (Insulated Gate Bipolar Transistor) features a robust and cost effective Ultra Field Stop Trench construction. The FGY60T120SQDN provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The FGY60T120SQDN also features an integrated soft and fast co-packaged free wheeling diode with a low forward voltage for fast recovery.
Teil # Mfg. Beschreibung Aktie Preis
FGY60T120SQDN
DISTI # V99:2348_22865638		ON SemiconductorIGBT 1200V 60A UFS0
  • 450000:$4.4170
  • 225000:$4.4230
  • 45000:$5.4410
  • 4500:$7.6630
  • 450:$8.0600
FGY60T120SQDN
DISTI # FGY60T120SQDNOS-ND		ON SemiconductorIGBT 1200V 60A UFS
RoHS: Not compliant
Min Qty: 1
Container: Tube		On Order
  • 900:$5.5172
  • 450:$6.0512
  • 25:$7.2968
  • 10:$7.6530
  • 1:$8.4700
FGY60T120SQDN
DISTI # FGY60T120SQDN		ON SemiconductorTrans IGBT Chip N-CH 1200V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: FGY60T120SQDN)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$4.0900
  • 2700:$4.1900
  • 1800:$4.2900
  • 450:$4.3900
  • 900:$4.3900
FGY60T120SQDN
DISTI # FGY60T120SQDN		ON SemiconductorTrans IGBT Chip N-CH 1200V 120A 3-Pin TO-247 Tube (Alt: FGY60T120SQDN)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 500:€4.2900
  • 1000:€4.2900
  • 100:€4.3900
  • 50:€4.4900
  • 25:€4.7900
  • 10:€4.8900
  • 1:€6.0900
FGY60T120SQDN
DISTI # 85AC2840		ON SemiconductorIGBT 1200V 60A UFS0
  • 500:$4.4100
  • 250:$4.5500
  • 100:$5.4300
  • 50:$5.8300
  • 25:$6.2400
  • 10:$6.8500
  • 1:$7.6300
FGY60T120SQDN
DISTI # 863-FGY60T120SQDN		ON SemiconductorIGBT Transistors IGBT 1200V 60A UFS
RoHS: Compliant		0
  • 1:$8.0600
  • 10:$7.2800
  • 25:$6.9500
  • 100:$6.0300
  • 250:$5.7600
  • 500:$5.2500
  • 1000:$4.5700
FGY60T120SQDN
DISTI # 3010444		ON SemiconductorIGBT, 1.2KV, 120A, 175DEG C, 517W
RoHS: Compliant		0
  • 250:$6.4100
  • 100:$7.5900
  • 50:$8.2000
  • 10:$8.8100
  • 5:$9.9700
  • 1:$10.7600
FGY60T120SQDN
DISTI # 3010444		ON SemiconductorIGBT, 1.2KV, 120A, 175DEG C, 517W0
  • 100:£4.3700
  • 50:£4.7100
  • 10:£5.0400
  • 5:£5.8400
  • 1:£6.3700
Bild Teil # Beschreibung
FGY60T120SQDN

Mfr.#: FGY60T120SQDN

OMO.#: OMO-FGY60T120SQDN

 IGBT Transistors IGBT 1200V 60A UFS
FGY60T120SQDN

Mfr.#: FGY60T120SQDN

OMO.#: OMO-FGY60T120SQDN-ON-SEMICONDUCTOR

 IGBT 1200V 60A UFS
Verfügbarkeit
Aktie:
349
Auf Bestellung:
2332
Menge eingeben:
Der aktuelle Preis von FGY60T120SQDN dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
8,06 $
8,06 $
10
7,28 $
72,80 $
25
6,95 $
173,75 $
100
6,03 $
603,00 $
250
5,76 $
1 440,00 $
500
5,25 $
2 625,00 $
1000
4,57 $
4 570,00 $
2500
4,40 $
11 000,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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