2DB1188P-13

2DB1188P-13
Mfr. #:
2DB1188P-13
Hersteller:
Diodes Incorporated
Beschreibung:
Bipolar Transistors - BJT 1000W -32Vceo
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2DB1188P-13 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
2DB1188P-13 Datasheet2DB1188P-13 Datasheet (P4-P6)2DB1188P-13 Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
SMD/SMT
Paket / Koffer:
SOT-89-3
Polarität des Transistors:
PNP
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
32 V
Kollektor- Basisspannung VCBO:
40 V
Emitter- Basisspannung VEBO:
5 V
Maximaler DC-Kollektorstrom:
2 A
Bandbreitenprodukt fT gewinnen:
120 MHz
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
2DB11
Höhe:
1.5 mm
Länge:
4.5 mm
Verpackung:
Spule
Breite:
2.48 mm
Marke:
Eingebaute Dioden
DC-Kollektor/Basisverstärkung hfe Min:
82
Pd - Verlustleistung:
1000 mW
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
2500
Unterkategorie:
Transistoren
Gewichtseinheit:
0.001834 oz
Tags
2DB1188, 2DB118, 2DB11, 2DB1, 2DB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans GP BJT PNP 32V 2A 1000mW Automotive 4-Pin(3+Tab) SOT-89 T/R
***ure Electronics
PNP 32 V 2 A 1 W Surface Mount Medium Power Transistor - SOT-89
***ark
Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:32V; Dc Collector Current:2A; Power Dissipation Pd:1W; Transistor Mounting:surface Mount; No. Of Pins:4Pins; Transition Frequency Ft:120Mhz; Dc Current Gain Hfe:82Hfe; Msl:-Rohs Compliant: No
***ure Electronics
2DB11 Series PNP 1 W 32 V 2 A Surface Mount Power Transistor - SOT-89
***ical
Trans GP BJT PNP 32V 2A 1000mW Automotive 4-Pin(3+Tab) SOT-89 T/R
*** Electronics
Bipolar Transistors - BJT 1000W -32Vceo
***ponent Sense
XSTR,PNP,Vce= -32V,Ic= -2A,SMD
***S
French Electronic Distributor since 1988
***p One Stop Global
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***ark
Trans, Pnp, 32V, 2A, 150Deg C, 1W Rohs Compliant: Yes |Diodes Inc. 2DB1188R-13
***et Europe
Trans GP BJT PNP 32V 2A 4-Pin(3+Tab) MPT T/R
***el Electronic
TRANS PNP 32V 2A SOT-89
***S
French Electronic Distributor since 1988
***i-Key
TRANS PNP 32V 2A MPT3
***SIT Distribution GmbH
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2SB1132 Series 32 V 1 A SMT PNP Medium Power Transistor - SC-62
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Trans GP BJT PNP 32V 1A 2000mW 4-Pin(3+Tab) MPT T/R
***SIT Distribution GmbH
Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon
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2SB1132 Series 32 V 1 A SMT PNP Medium Power Transistor - SC-62
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Trans GP BJT PNP 32V 1A 2000mW 4-Pin(3+Tab) MPT T/R
***ment14 APAC
TRANSISTOR,PNP,32V,1A,SO-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-32V; Power Dissipation Pd:500mW; DC Collector Current:-1A; DC Current Gain hFE:82; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Gain Bandwidth ft Typ:150MHz
***ical
Trans GP BJT PNP 32V 1A Automotive 4-Pin(3+Tab) SOT-89 T/R
***des Inc SCT
PNP, 32V, 1A, SOT89,190MHz
Teil # Mfg. Beschreibung Aktie Preis
2DB1188P-13
DISTI # 1034-2DB1188PDICT-ND
Diodes IncorporatedTRANS PNP 32V 2A SOT89-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1051In Stock
  • 1000:$0.1734
  • 500:$0.2243
  • 100:$0.2855
  • 10:$0.3820
  • 1:$0.4500
2DB1188P-13
DISTI # 1034-2DB1188PDIDKR-ND
Diodes IncorporatedTRANS PNP 32V 2A SOT89-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1051In Stock
  • 1000:$0.1734
  • 500:$0.2243
  • 100:$0.2855
  • 10:$0.3820
  • 1:$0.4500
2DB1188P-13
DISTI # 2DB1188PDICT-ND
Diodes IncorporatedTRANS PNP 32V 2A SOT89-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    2DB1188P-13
    DISTI # 2DB1188PDIDKR-ND
    Diodes IncorporatedTRANS PNP 32V 2A SOT89-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      2DB1188P-13
      DISTI # 1034-2DB1188PDITR-ND
      Diodes IncorporatedTRANS PNP 32V 2A SOT89-3
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
        2DB1188P-13
        DISTI # 2DB1188PDITR-ND
        Diodes IncorporatedTRANS PNP 32V 2A SOT89-3
        RoHS: Compliant
        Min Qty: 2500
        Container: Tape & Reel (TR)
        Temporarily Out of Stock
        • 2500:$0.1535
        2DB1188P-13
        DISTI # 2DB1188P-13
        Diodes IncorporatedTrans GP BJT PNP 32V 2A 4-Pin(3+Tab) SOT-89 T/R - Tape and Reel (Alt: 2DB1188P-13)
        RoHS: Not Compliant
        Min Qty: 2500
        Container: Reel
        Americas - 2500
        • 2500:$0.1279
        • 5000:$0.1279
        • 10000:$0.1269
        • 15000:$0.1269
        • 25000:$0.1269
        2DB1188P-13
        DISTI # 621-2DB1188P-13
        Diodes IncorporatedBipolar Transistors - BJT 1000W -32Vceo
        RoHS: Compliant
        0
        • 2500:$0.1310
        Bild Teil # Beschreibung
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        2DB1188P-13

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        OMO.#: OMO-2DB1188P-13

        Bipolar Transistors - BJT 1000W -32Vceo
        2DB1188Q-13

        Mfr.#: 2DB1188Q-13

        OMO.#: OMO-2DB1188Q-13-DIODES

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        OMO.#: OMO-2DB1188Q-13R-1190

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        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        3500
        Menge eingeben:
        Der aktuelle Preis von 2DB1188P-13 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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