SISS92DN-T1-GE3

SISS92DN-T1-GE3
Mfr. #:
SISS92DN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 250V Vds; +/-20V Vgs PowerPAK 1212-8S
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SISS92DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SISS92DN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-1212-8SH-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
250 V
Id - Kontinuierlicher Drainstrom:
12.3 A
Rds On - Drain-Source-Widerstand:
173 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
16 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
65.8 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET; PowerPAK
Verpackung:
Spule
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
12 S
Abfallzeit:
6 ns
Produktart:
MOSFET
Anstiegszeit:
4 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
17 ns
Typische Einschaltverzögerungszeit:
10 ns
Tags
SISS9, SISS, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SISS92DN-T1-GE3
DISTI # V72:2272_22989550
Vishay IntertechnologiesSISS92DN-T1-GE35520
  • 75000:$0.4588
  • 30000:$0.4611
  • 15000:$0.4633
  • 6000:$0.4655
  • 3000:$0.4677
  • 1000:$0.4699
  • 500:$0.5699
  • 250:$0.6778
  • 100:$0.7067
  • 50:$0.8402
  • 25:$0.9335
  • 10:$1.0541
  • 1:$1.3044
SISS92DN-T1-GE3
DISTI # SISS92DN-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 250V POWERPAK 1212
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5980In Stock
  • 1000:$0.5597
  • 500:$0.7089
  • 100:$0.8582
  • 10:$1.1010
  • 1:$1.2300
SISS92DN-T1-GE3
DISTI # SISS92DN-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 250V POWERPAK 1212
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5980In Stock
  • 1000:$0.5597
  • 500:$0.7089
  • 100:$0.8582
  • 10:$1.1010
  • 1:$1.2300
SISS92DN-T1-GE3
DISTI # SISS92DN-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 250V POWERPAK 1212
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 15000:$0.4637
  • 6000:$0.4818
  • 3000:$0.5071
SISS92DN-T1-GE3
DISTI # 32725040
Vishay IntertechnologiesSISS92DN-T1-GE35520
  • 15000:$0.4633
  • 6000:$0.4655
  • 3000:$0.4677
  • 1000:$0.4699
  • 500:$0.5699
  • 250:$0.6778
  • 100:$0.7067
  • 50:$0.8402
  • 25:$0.9335
  • 15:$1.0541
SISS92DN-T1-GE3
DISTI # SISS92DN-T1-GE3
Vishay IntertechnologiesTransistor MOSFET N-CH 250V 12.3A 8-Pin PowerPAK 1212-S T/R (Alt: SISS92DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.4609
  • 18000:€0.4819
  • 12000:€0.5449
  • 6000:€0.6719
  • 3000:€0.9369
SISS92DN-T1-GE3
DISTI # 99AC2832
Vishay IntertechnologiesMOSFET, N-CH, 250V, 12.3A, 150DEG C,Transistor Polarity:N Channel,Continuous Drain Current Id:12.3A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.14ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes30
  • 500:$0.6490
  • 250:$0.7340
  • 100:$0.8750
  • 50:$0.9640
  • 25:$1.0700
  • 10:$1.1800
  • 1:$1.2500
SISS92DN-T1-GE3
DISTI # 78-SISS92DN-T1-GE3
Vishay IntertechnologiesMOSFET 250V Vds,+/-20V Vgs PowerPAK 1212-8S
RoHS: Compliant
5474
  • 1:$1.2000
  • 10:$0.9940
  • 100:$0.7630
  • 500:$0.6560
  • 1000:$0.5180
  • 3000:$0.4830
  • 6000:$0.4590
  • 9000:$0.4420
SISS92DN-T1-GE3
DISTI # 3019146
Vishay IntertechnologiesMOSFET, N-CH, 250V, 12.3A, 150DEG C34
  • 500:£0.5760
  • 250:£0.6550
  • 100:£0.7340
  • 10:£0.9690
  • 1:£1.1900
SISS92DN-T1-GE3
DISTI # 3019146
Vishay IntertechnologiesMOSFET, N-CH, 250V, 12.3A, 150DEG C
RoHS: Compliant
30
  • 1000:$0.6380
  • 500:$0.7860
  • 250:$0.8610
  • 100:$0.9360
  • 25:$1.2100
  • 5:$1.3200
Bild Teil # Beschreibung
AD8691AKSZ-REEL7

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Mfr.#: BQ25601DRTWR

OMO.#: OMO-BQ25601DRTWR

Battery Management I2C controlled single cell 3-A battery charger with high input voltage and power path 24-WQFN -40 to 85
AD8691AKSZ-REEL7

Mfr.#: AD8691AKSZ-REEL7

OMO.#: OMO-AD8691AKSZ-REEL7-ANALOG-DEVICES-INC-ADI

Precision Amplifiers Low Noise SGL CMOS RRO
STL3NM60N

Mfr.#: STL3NM60N

OMO.#: OMO-STL3NM60N-STMICROELECTRONICS

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STM32L433CBT6

Mfr.#: STM32L433CBT6

OMO.#: OMO-STM32L433CBT6-STMICROELECTRONICS

IC MCU 32BIT 128KB FLASH 48LQFP
TACL105K010RTA

Mfr.#: TACL105K010RTA

OMO.#: OMO-TACL105K010RTA-AVX

Tantalum Capacitors - Solid SMD 0603 10V 1.0uF 10%
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1988
Menge eingeben:
Der aktuelle Preis von SISS92DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,20 $
1,20 $
10
0,99 $
9,94 $
100
0,76 $
76,30 $
500
0,66 $
328,00 $
1000
0,52 $
518,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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