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IRF3709ZSTRRPBF

IRF3709ZSTRRPBF
Mfr. #:
IRF3709ZSTRRPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF3709ZSTRRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF3709ZSTRRPBF DatasheetIRF3709ZSTRRPBF Datasheet (P4-P6)IRF3709ZSTRRPBF Datasheet (P7-P9)IRF3709ZSTRRPBF Datasheet (P10-P12)IRF3709ZSTRRPBF Datasheet (P13)
ECAD Model:
Mehr Informationen:
IRF3709ZSTRRPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
87 A
Rds On - Drain-Source-Widerstand:
7.8 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
17 nC
Pd - Verlustleistung:
79 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001563134
Gewichtseinheit:
0.139332 oz
Tags
IRF3709ZST, IRF3709ZS, IRF3709Z, IRF3709, IRF370, IRF37, IRF3, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 6.3 mOhm 17 nC HEXFET® Power Mosfet - D2PAK
*** Source Electronics
Trans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 30V 87A D2PAK
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:87A; On Resistance, Rds(on):6.3mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRF3709ZSTRRPBF
DISTI # V72:2272_13890152		Infineon Technologies AGTrans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		2258
  • 1000:$0.5349
  • 500:$0.5943
  • 250:$0.8585
  • 100:$0.9240
  • 25:$1.0717
  • 10:$1.1021
  • 1:$1.2458
IRF3709ZSTRRPBF
DISTI # IRF3709ZSTRRPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 87A D2PAK
RoHS: Compliant
Min Qty: 3200
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3200:$0.7392
IRF3709ZSTRRPBF
DISTI # 31589370		Infineon Technologies AGTrans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		2258
  • 1000:$0.5349
  • 500:$0.5943
  • 250:$0.8585
  • 100:$0.9240
  • 25:$1.0717
  • 12:$1.1021
IRF3709ZSTRRPBF
DISTI # IRF3709ZSTRRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF3709ZSTRRPBF)
RoHS: Compliant
Min Qty: 3200
Container: Reel		Americas - 0
  • 3200:$0.5529
  • 4800:$0.5329
  • 8000:$0.5139
  • 16000:$0.4959
  • 32000:$0.4869
IRF3709ZSTRRPBF
DISTI # 70019545		Infineon Technologies AGMOSFET,30V,87A,6.3 MOHM,17 NC QG,D2-PAK
RoHS: Compliant		0
  • 3200:$1.0840
  • 6400:$1.0620
  • 16000:$1.0300
IRF3709ZSTRRPBF
DISTI # 942-IRF3709ZSTRRPBF		Infineon Technologies AGMOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg
RoHS: Compliant		0
  • 1:$1.5800
  • 10:$1.3500
  • 100:$1.0400
  • 500:$0.9130
  • 800:$0.7200
IRF3709ZSTRRPBF
DISTI # C1S322000705496		Infineon Technologies AGMOSFETs
RoHS: Compliant		2258
  • 800:$0.5574
Bild Teil # Beschreibung
BZV55-C15,115

Mfr.#: BZV55-C15,115

OMO.#: OMO-BZV55-C15-115

 Zener Diodes DIODE ZENER 5 PCT TAPE-7
BBS-120-G-A

Mfr.#: BBS-120-G-A

OMO.#: OMO-BBS-120-G-A

 Headers & Wire Housings 0.1in Standard Single Row, Screw Machine Terminal Strip
BBS-120-G-A

Mfr.#: BBS-120-G-A

OMO.#: OMO-BBS-120-G-A-SAMTEC

 Conn Unshrouded Header HDR 20 POS 2.54mm Solder ST Thru-Hole Tube
BZV55-C15,115

Mfr.#: BZV55-C15,115

OMO.#: OMO-BZV55-C15-115-NEXPERIA

 Zener Diodes DIODE ZENER 5 PCT TAPE-7
Verfügbarkeit
Aktie:
775
Auf Bestellung:
2758
Menge eingeben:
Der aktuelle Preis von IRF3709ZSTRRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,57 $
1,57 $
10
1,34 $
13,40 $
100
1,03 $
103,00 $
500
0,91 $
456,50 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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