SI4446DY-T1-E3

SI4446DY-T1-E3
Mfr. #:
SI4446DY-T1-E3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET RECOMMENDED ALT 781-SI4840BDY-GE3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4446DY-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4446DY-T1-E3 DatasheetSI4446DY-T1-E3 Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Serie:
SI4
Breite:
3.9 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Teil # Aliase:
SI4446DY-E3
Gewichtseinheit:
0.006596 oz
Tags
SI444, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
MOSFET N-CH 40V 3.9A 8-SOIC / Trans MOSFET N-CH 40V 3.9A 8-Pin SOIC N T/R
*** Electronics
VISHAY SILICONIX SI4446DY-T1-E3 MOSFET Transistor, N Channel, 3.9 A, 40 V, 0.033 ohm, 10 V, 1.6 V
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:5200mA; Drain Source Voltage, Vds:40V; On Resistance, Rds(on):0.045ohm; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.6V; Power Dissipation, Pd:1.1W ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 40V, 3.9A, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.1W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C
Teil # Mfg. Beschreibung Aktie Preis
SI4446DY-T1-E3
DISTI # V36:1790_14141982
Vishay IntertechnologiesTrans MOSFET N-CH 40V 3.9A 8-Pin SOIC N T/R
RoHS: Compliant
0
    SI4446DY-T1-E3
    DISTI # SI4446DY-T1-E3TR-ND
    Vishay SiliconixMOSFET N-CH 40V 3.9A 8-SOIC
    Min Qty: 2500
    Container: Tape & Reel (TR)
    Limited Supply - Call
      SI4446DY-T1-E3
      DISTI # SI4446DY-T1-E3CT-ND
      Vishay SiliconixMOSFET N-CH 40V 3.9A 8-SOIC
      Min Qty: 1
      Container: Cut Tape (CT)
      Limited Supply - Call
        SI4446DY-T1-E3
        DISTI # SI4446DY-T1-E3DKR-ND
        Vishay SiliconixMOSFET N-CH 40V 3.9A 8-SOIC
        Min Qty: 1
        Container: Digi-Reel®
        Limited Supply - Call
          Bild Teil # Beschreibung
          SI4446DY-T1-E3

          Mfr.#: SI4446DY-T1-E3

          OMO.#: OMO-SI4446DY-T1-E3

          MOSFET RECOMMENDED ALT 781-SI4840BDY-GE3
          SI4446DY-T1-E3

          Mfr.#: SI4446DY-T1-E3

          OMO.#: OMO-SI4446DY-T1-E3-VISHAY

          MOSFET N-CH 40V 3.9A 8-SOIC
          SI4446DY-T1-GE3

          Mfr.#: SI4446DY-T1-GE3

          OMO.#: OMO-SI4446DY-T1-GE3-VISHAY

          MOSFET N-CH 40V 3.9A 8-SOIC
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          5500
          Menge eingeben:
          Der aktuelle Preis von SI4446DY-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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