SI2318DS-T1-GE3

Mfr. #:: SI2318DS-T1-GE3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET 40V 3.9A 1.25W 45mohm @ 10V
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI2318DS-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI2318DS-T1-GE3 Datasheet SI2318DS-T1-GE3 Datasheet (P4-P6)SI2318DS-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:: SI2318DS-T1-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: SOT-23-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 40 V

Id - Kontinuierlicher Drainstrom:: 3 A

Rds On - Drain-Source-Widerstand:: 45 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1 V

Vgs - Gate-Source-Spannung:: 10 V

Qg - Gate-Ladung:: 10 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 0.75 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: TrenchFET

Verpackung:: Spule

Höhe:: 1.45 mm

Länge:: 2.9 mm

Serie:: SI2

Transistortyp:: 1 N-Channel

Breite:: 1.6 mm

Marke:: Vishay / Siliconix

Vorwärtstranskonduktanz - Min:: 11 S

Abfallzeit:: 15 ns

Produktart:: MOSFET

Anstiegszeit:: 12 ns

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 20 ns

Typische Einschaltverzögerungszeit:: 5 ns

Teil # Aliase:: SI2318DS-GE3

Gewichtseinheit:: 0.000282 oz

Tags: SI2318DS-T, SI2318D, SI2318, SI231, SI23, SI2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2318DS-T1-GE3 Bewertungen und Rezensionen

D***t

2019-06-05

,***s

OK...

2019-03-25

E***v

Delivery timely. Complete set.

2019-07-16

SI2318DS-T1-GE3 Beschreibung

***ure Electronics: Si2318DS Series 40 V 3.9 A 45 mOhm SMT N-Channel MOSFET - SOT-23-3

***et: Trans MOSFET N-CH 40V 3A 3-Pin SOT-23

***ment14 APAC: N CH MOSFET; Transistor Polarity:N Chann; N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:40V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:750mW; No. of Pins:3

SI2318DS-T1-GE3 Mehr Informationen

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI2318DS-T1-GE3 DISTI # V72:2272_09216802	Vishay Intertechnologies	Trans MOSFET N-CH 40V 3A 3-Pin SOT-23 RoHS: Compliant	2020	75000:$0.1576 30000:$0.1593 15000:$0.1618 6000:$0.1671 3000:$0.1681 1000:$0.2085 500:$0.2466 250:$0.2761 100:$0.3068 50:$0.3332 25:$0.4071 10:$0.4525 1:$0.5845
SI2318DS-T1-GE3 DISTI # V99:2348_09216802	Vishay Intertechnologies	Trans MOSFET N-CH 40V 3A 3-Pin SOT-23 RoHS: Compliant	0
SI2318DS-T1-GE3 DISTI # V36:1790_09216802	Vishay Intertechnologies	Trans MOSFET N-CH 40V 3A 3-Pin SOT-23 RoHS: Compliant	0
SI2318DS-T1-GE3 DISTI # SI2318DS-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 40V 3A SOT-23 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	10173In Stock	1000:$0.2114 500:$0.2736 100:$0.3482 10:$0.4660 1:$0.5400
SI2318DS-T1-GE3 DISTI # SI2318DS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 40V 3A SOT-23 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	10173In Stock	1000:$0.2114 500:$0.2736 100:$0.3482 10:$0.4660 1:$0.5400
SI2318DS-T1-GE3 DISTI # SI2318DS-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 40V 3A SOT-23 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	30000:$0.1610 15000:$0.1630 6000:$0.1751 3000:$0.1872
SI2318DS-T1-GE3 DISTI # 32633415	Vishay Intertechnologies	Trans MOSFET N-CH 40V 3A 3-Pin SOT-23 RoHS: Compliant	2020	30000:$0.1731 15000:$0.1751 6000:$0.1770 3000:$0.1780 1000:$0.2157 500:$0.2527 250:$0.2761 100:$0.3068 50:$0.3332 40:$0.4071
SI2318DS-T1-GE3 DISTI # SI2318DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 3A 3-Pin SOT-23 - Tape and Reel (Alt: SI2318DS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.1474 18000:$0.1515 12000:$0.1558 6000:$0.1624 3000:$0.1674
SI2318DS-T1-GE3 DISTI # 84R8029	Vishay Intertechnologies	Trans MOSFET N-CH 40V 3A 3-Pin SOT-23 - Product that comes on tape, but is not reeled (Alt: 84R8029) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1000:$0.2450 500:$0.3180 250:$0.3530 100:$0.3860 50:$0.4540 25:$0.5200 1:$0.6880
SI2318DS-T1-GE3 DISTI # 15R4909	Vishay Intertechnologies	N CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:3A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.036ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:750mW RoHS Compliant: Yes	0	50000:$0.1490 30000:$0.1560 20000:$0.1670 10000:$0.1790 5000:$0.1940 1:$0.1980
SI2318DS-T1-GE3 DISTI # 84R8029	Vishay Intertechnologies	N CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:3A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.036ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:750mW RoHS Compliant: Yes	3858	1000:$0.1980 500:$0.2570 250:$0.2840 100:$0.3120 50:$0.3660 25:$0.4200 1:$0.5450
SI2318DS-T1-GE3 DISTI # 70459674	Vishay Siliconix	40V 3.9A 1.25W 45mohm @ 10V RoHS: Compliant	2200	1:$0.7070 2:$0.6980 5:$0.6710 10:$0.6440 25:$0.5990
SI2318DS-T1-GE3 DISTI # 781-SI2318DS-GE3	Vishay Intertechnologies	MOSFET 40V 3.9A 1.25W 45mohm @ 10V RoHS: Compliant	4844	1:$0.5400 10:$0.4150 100:$0.3080 500:$0.2530 1000:$0.1950 3000:$0.1780 6000:$0.1660 9000:$0.1550 24000:$0.1500
SI2318DS-T1-GE3	Vishay Intertechnologies		38
SI2318DS-T1-GE3 DISTI # SI2318DS-T1-GE3	Vishay Intertechnologies	Transistor: N-MOSFET,unipolar,40V,2.4A,0.48W,SOT23	670	3000:$0.2061 500:$0.2209 100:$0.2449 25:$0.2779 3:$0.3086
SI2318DS-T1-GE3	Vishay Intertechnologies	MOSFET 40V 3.9A 1.25W 45mohm @ 10V RoHS: Compliant	Americas -
SI2318DS-T1-GE3 DISTI # 1867178	Vishay Intertechnologies	N CHANNEL MOSFET RoHS: Compliant	3858	250:£0.2580 100:£0.2830 50:£0.3310 25:£0.3810 1:£0.4930
SI2318DS-T1-GE3 DISTI # 1867178	Vishay Intertechnologies	N CHANNEL MOSFET RoHS: Compliant	3858	6000:$0.2580 3000:$0.2760 1000:$0.3010 500:$0.3910 100:$0.4760 10:$0.6400 1:$0.8310

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1987
Menge eingeben:

Der aktuelle Preis von SI2318DS-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,54 $~~; ~~0,54 $~~

10: ~~0,42 $~~; ~~4,15 $~~

100: ~~0,31 $~~; ~~30,80 $~~

500: ~~0,25 $~~; ~~126,50 $~~

1000: ~~0,20 $~~; ~~195,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SI2318DS-T 3
SI2318D 4
SI2318 12
SI231 94
SI23 561
SI2 1125

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