MMRF1317HR5

MMRF1317HR5
Mfr. #:
MMRF1317HR5
Hersteller:
NXP / Freescale
Beschreibung:
RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 1030-1090 MHz, 1300 W Peak, 50 V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MMRF1317HR5 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-MOSFET-Transistoren
Polarität des Transistors:
N-Kanal
Technologie:
Si
Id - Kontinuierlicher Drainstrom:
2.6 A
Vds - Drain-Source-Durchbruchspannung:
- 500 mV, 105 V
Gewinnen:
18.2 dB
Ausgangsleistung:
1.3 kW
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
NI-1230H-4S-4
Verpackung:
Spule
Arbeitsfrequenz:
1.02 GHz to 1.1 GHz
Typ:
HF-Leistungs-MOSFET
Marke:
NXP / Freescale
Anzahl der Kanäle:
2 Channel
Pd - Verlustleistung:
869 W
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
- 6 V, 10 V
Vgs th - Gate-Source-Schwellenspannung:
1.7 V
Teil # Aliase:
935318748178
Gewichtseinheit:
0.465355 oz
Tags
MMRF131, MMRF13, MMRF1, MMRF, MMR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor,1030 to 1090 MHz, 1300 W, Typ Gain in dB is 18.9 @ 1030 MHz, 50 V, LDMOS, SOT1787
***et Europe
Transistor RF FET N-CH 105V 1030MHz to 1090MHz 4-Pin NI-1230H T/R
***el Electronic
RF MOSFET Transistors BL RF
***i-Key
TRANS 1030-1090MHZ 1300W 50V
***y Parts
TRANS 1030MHZ 1550W PEAK 50V
***et
1.02-1.04GHZ 1500WFL
***hardson RFPD
RF POWER TRANSISTOR
Teil # Mfg. Beschreibung Aktie Preis
MMRF1317HR5
DISTI # MMRF1317HR5CT-ND
NXP SemiconductorsTRANS 1030-1090MHZ 1300W 50V
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
17In Stock
  • 1:$813.0500
MMRF1317HR5
DISTI # MMRF1317HR5DKR-ND
NXP SemiconductorsTRANS 1030-1090MHZ 1300W 50V
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
17In Stock
  • 1:$813.0500
MMRF1317HR5
DISTI # MMRF1317HR5TR-ND
NXP SemiconductorsTRANS 1030MHZ 1550W PEAK 50V
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 50:$584.3540
MMRF1317HR5
DISTI # MMRF1317HR5
Avnet, Inc.Trans MOSFET N-CH -0.5V/105V 4-Pin NI-1230H Box - Tape and Reel (Alt: MMRF1317HR5)
RoHS: Compliant
Min Qty: 50
Container: Reel
Americas - 0
  • 50:$640.3900
  • 100:$615.2900
  • 200:$591.2900
  • 300:$569.7900
  • 500:$558.8900
MMRF1317HR5
DISTI # 841-MMRF1317HR5
NXP SemiconductorsRF MOSFET Transistors MMRF1317H/CFM4F///REEL 13 Q2 NDP SmallPQ
RoHS: Compliant
0
  • 50:$562.4300
Bild Teil # Beschreibung
MMRF1306HR5

Mfr.#: MMRF1306HR5

OMO.#: OMO-MMRF1306HR5

RF MOSFET Transistors MOSFET 10-500 MHz 1000 W 50 V
MMRF1023HSR5

Mfr.#: MMRF1023HSR5

OMO.#: OMO-MMRF1023HSR5

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 66 W Avg., 28 V
MMRF1315NR1

Mfr.#: MMRF1315NR1

OMO.#: OMO-MMRF1315NR1

RF MOSFET Transistors Broadband RF Power LDMOS Transistor, 500-1000 MHz, 60 W CW, 28 V
MMRF1013HR5

Mfr.#: MMRF1013HR5

OMO.#: OMO-MMRF1013HR5

RF MOSFET Transistors Lateral N-Channel Broadband RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V
MMRF1006HS

Mfr.#: MMRF1006HS

OMO.#: OMO-MMRF1006HS-1190

Neu und Original
MMRF1320NR1

Mfr.#: MMRF1320NR1

OMO.#: OMO-MMRF1320NR1-NXP-SEMICONDUCTORS

RF MOSFET Transistors WIDEBAND RF POWER LDMOS TRANSISTORS, 1.8--600 MHz, 150 W CW, 50 V
MMRF1317HSR5

Mfr.#: MMRF1317HSR5

OMO.#: OMO-MMRF1317HSR5-NXP-SEMICONDUCTORS

RF MOSFET Transistors RF Power LDMOS Transistor, 1030 MHz, 1550 W PEAK, 50 V
MMRF1308HR5

Mfr.#: MMRF1308HR5

OMO.#: OMO-MMRF1308HR5-NXP-SEMICONDUCTORS

FET RF 2CH 133V 230MHZ NI1230
MMRF1014NT1

Mfr.#: MMRF1014NT1

OMO.#: OMO-MMRF1014NT1-NXP-SEMICONDUCTORS

RF MOSFET Transistors LATERAL N--CHANNEL RF POWER LDMOS TRANSISTOR, 1-2000 MHz, 4 W, 28 V
MMRF1310HR5

Mfr.#: MMRF1310HR5

OMO.#: OMO-MMRF1310HR5-NXP-SEMICONDUCTORS

RF MOSFET Transistors Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von MMRF1317HR5 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Beginnen mit
Neueste Produkte
  • PCF85263 CMOS Real-Time Clock
    NXP's tiny real-time clock/calendar is optimized for low power consumption and with automatic switching to battery on main power loss.
  • NFC Contactless Readers
    NXP's NFC frontend with an advanced 32-bit microcontroller
  • Smart Charging Solutions
    NXP's smart charging solution consists of a primary side flyback QR controller, a secondary side SR controller, and a protocol controller.
  • Compare MMRF1317HR5
    MMRF1310HR5 vs MMRF1310HSR5 vs MMRF1311HR5
  • FRDM-KL26Z
    FRDM-KL26Z is an ultra-low-cost development platform for Kinetis L series KL16 and KL26 MCUs built on ARM® Cortex™-M0+ processors.
  • Single-Coil Wireless Reference Design
    Design is based on the WPC-A11 transmitter definition, comprising of a 5 VDC input source, full-bridge inverter topology and frequency-control methodology
Top