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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SI5908DC-T1-GE3 DISTI # V72:2272_09216242 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 4.4A 8-Pin Chip FET T/R RoHS: Compliant | 398 |
|
| SI5908DC-T1-GE3 DISTI # V36:1790_09216242 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 4.4A 8-Pin Chip FET T/R RoHS: Compliant | 0 |
|
| SI5908DC-T1-GE3 DISTI # SI5908DC-T1-GE3CT-ND | Vishay Siliconix | MOSFET 2N-CH 20V 4.4A 1206-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 2975In Stock |
|
| SI5908DC-T1-GE3 DISTI # SI5908DC-T1-GE3DKR-ND | Vishay Siliconix | MOSFET 2N-CH 20V 4.4A 1206-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 2975In Stock |
|
| SI5908DC-T1-GE3 DISTI # SI5908DC-T1-GE3TR-ND | Vishay Siliconix | MOSFET 2N-CH 20V 4.4A 1206-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| SI5908DC-T1-GE3 DISTI # 31154741 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 4.4A 8-Pin Chip FET T/R RoHS: Compliant | 398 |
|
| SI5908DC-T1-GE3 DISTI # SI5908DC-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 4.4A 8-Pin Chip FET T/R (Alt: SI5908DC-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Asia - 0 | |
| SI5908DC-T1-GE3 DISTI # SI5908DC-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 4.4A 8-Pin Chip FET T/R - Tape and Reel (Alt: SI5908DC-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SI5908DC-T1-GE3 DISTI # SI5908DC-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 4.4A 8-Pin Chip FET T/R (Alt: SI5908DC-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Europe - 0 |
|
| SI5908DC-T1-GE3 DISTI # 86R3909 | Vishay Intertechnologies | DUAL N-CHANNEL 20-V (D-S) MOSFET | 0 |
|
| SI5908DC-T1-GE3. DISTI # 30AC0177 | Vishay Intertechnologies | Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4.4A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.032ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,Power Dissipation Pd:1.1W,No. of Pins:8PinsRoHS Compliant: No | 0 |
|
| SI5908DC-T1-GE3 DISTI # 78-SI5908DC-T1-GE3 | Vishay Intertechnologies | MOSFET 20V Vds 8V Vgs 1206-8 ChipFET RoHS: Compliant | 3821 |
|
| SI5908DC-T1-GE3 | Vishay Siliconix | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 4.4A I(D), 20V, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 400 |
|
| SI5908DCT1GE3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 4.4A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 3000 | |
| SI5908DC-T1-GE3 | Vishay Intertechnologies | MOSFET 20V Vds 8V Vgs 1206-8 ChipFET RoHS: Compliant | Americas - 6000 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: SI5908DC-T1-E3 OMO.#: OMO-SI5908DC-T1-E3 |
MOSFET 20V Vds 8V Vgs 1206-8 ChipFET |
|
|
Mfr.#: SI5908DC-T1-GE3 OMO.#: OMO-SI5908DC-T1-GE3 |
MOSFET 20V Vds 8V Vgs 1206-8 ChipFET |
|
Mfr.#: SI5908 OMO.#: OMO-SI5908-1190 |
Neu und Original |
|
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Mfr.#: SI5908DC OMO.#: OMO-SI5908DC-1190 |
Neu und Original |
|
Mfr.#: SI5908DC-T1-E3 OMO.#: OMO-SI5908DC-T1-E3-VISHAY |
MOSFET 2N-CH 20V 4.4A 1206-8 |
|
|
Mfr.#: SI5908DC-T1-GE3 OMO.#: OMO-SI5908DC-T1-GE3-VISHAY |
MOSFET 2N-CH 20V 4.4A 1206-8 |
|
|
Mfr.#: SI5908DCT1GE3 OMO.#: OMO-SI5908DCT1GE3-1190 |
Small Signal Field-Effect Transistor, 4.4A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |