DMG4407SSS-13

Mfr. #:: DMG4407SSS-13
Hersteller:: Diodes Incorporated
Beschreibung:: MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: DMG4407SSS-13 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: DMG4407SSS-13 Datasheet DMG4407SSS-13 Datasheet (P4-P6)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: D

Produktkategorie: FETs - Einzeln

Serie: DMG4407

Verpackung: Spule

Gewichtseinheit: 0.002610 oz

Montageart: SMD/SMT

Paket-Koffer: SO-8

Technologie: Si

ID-Dauer-Drain-Strom: 9.9 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Rds-On-Drain-Source-Widerstand: 17 mOhms

Transistor-Polarität: P-Kanal

Tags: DMG4407, DMG440, DMG44, DMG4, DMG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DMG4407SSS-13 Beschreibung

***ure Electronics: Single P-Channel 30 V 1.45 W 20.5 nC Silicon Surface Mount Mosfet - SOIC-8

***ical: Trans MOSFET P-CH 30V 9.9A Automotive 8-Pin SO T/R

***ark: Mosfet, P-Ch, 30V, 9.9A, Soic Rohs Compliant: Yes

***ment14 APAC: MOSFET, P-CH, 30V, 9.9A, SOIC;

***ure Electronics: Single N-Channel 30 V 2 W 12.5 nC Silicon Surface Mount Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 30V 10.3A Automotive 8-Pin SO T/R

***(Formerly Allied Electronics): MOSFET; N Channel; MOS; Trans; 30V; 10.3A; SO8

***S: French Electronic Distributor since 1988

***ure Electronics: Mosfet Transistor, N Channel, 10 A, 30 V, 0.0092 Ohm, 10 V, 2 V

***ment14 APAC: MOSFET, N-CH, 30V, 10A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Source Voltage Vds:30V; On Resistance

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-DSO-8, RoHS

***nell: MOSFET, N-CH, 30V, 10A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0092ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 1.56W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***(Formerly Allied Electronics): IRF8707TRPBF N-channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC

***ure Electronics: Single N-Channel 30 V 17.5 mOhm 9.3 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R / MOSFET N-CH 30V 11A 8-SOIC

***ark: N Channel Mosfet, 30V, 11A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0119Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***ure Electronics: Single P-Channel 30 V 13.3 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8

***ark: MOSFET, P CH, -30V, 0.0133OHM, -9.2A, SOIC-8

***(Formerly Allied Electronics): MOSFET, P-CHANNEL, -30V, -9.2A, 19.4 MOHM, 25VGS, SO-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ment14 APAC: MOSFET, P-CH, -30V, -9.2A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-9.2A; Source Voltage Vds:-30V; On Resistance

***ineon: Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side

***roFlash: Power Field-Effect Transistor, 9.2A I(D), 30V, 0.0194ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, P-CH, -30V, -9.2A, SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -9.2A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0133ohm; Rds(on) Test Voltage Vgs: -20V; Threshold Voltage Vgs: -1.8V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ure Electronics: N-Channel 30 V 11.9 mOhm Surface Mount Schottky Diode Mosfet - SOIC-8

***ark: Mosfet,+Sch,n Channel,30V,11A,so8; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0085Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***nell: MOSFET,+SCH,N CH,30V,11A,SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 1.55W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 11A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 20V

***et Europe: Trans MOSFET N-CH 30V 10.4A 8-Pin SO T/R

***i-Key: MOSFET N-CH 30V 10.4A 8SO

***ment14 APAC: MOSFET,+SCH,N CH,30V,11A,SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:10.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.55W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.4A; Power Dissipation Pd:1.55W; Voltage Vgs Max:12V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
DMG4407SSS-13 DISTI # V72:2272_06697730	Zetex / Diodes Inc	Trans MOSFET P-CH 30V 9.9A Automotive 8-Pin SO T/R RoHS: Compliant	1100	75000:$0.1581 30000:$0.1623 15000:$0.1664 6000:$0.1805 3000:$0.1824 1000:$0.2145 500:$0.2776 250:$0.2806 100:$0.2836 50:$0.4564 25:$0.4615 10:$0.4665 1:$0.5611
DMG4407SSS-13 DISTI # DMG4407SSS-13DICT-ND	Diodes Incorporated	MOSFET P-CH 30V 9.9A 8-SO RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2485In Stock	1000:$0.2648 500:$0.3427 100:$0.4674 10:$0.6230 1:$0.7400
DMG4407SSS-13 DISTI # DMG4407SSS-13DIDKR-ND	Diodes Incorporated	MOSFET P-CH 30V 9.9A 8-SO RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2485In Stock	1000:$0.2648 500:$0.3427 100:$0.4674 10:$0.6230 1:$0.7400
DMG4407SSS-13 DISTI # DMG4407SSS-13DITR-ND	Diodes Incorporated	MOSFET P-CH 30V 9.9A 8-SO RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.2344
DMG4407SSS-13 DISTI # 25756449	Zetex / Diodes Inc	Trans MOSFET P-CH 30V 9.9A Automotive 8-Pin SO T/R RoHS: Compliant	1100	1000:$0.2145 500:$0.2776 250:$0.2806 100:$0.2836 50:$0.4564 37:$0.4615
DMG4407SSS-13 DISTI # DMG4407SSS-13	Diodes Incorporated	Trans MOSFET P-CH 30V 9.9A 8-Pin SO T/R - Tape and Reel (Alt: DMG4407SSS-13) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.1699 5000:$0.1619 10000:$0.1539 15000:$0.1469 25000:$0.1439
DMG4407SSS-13 DISTI # 621-DMG4407SSS-13	Diodes Incorporated	MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K RoHS: Compliant	2620	1:$0.6000 10:$0.4970 100:$0.3030 1000:$0.2340 2500:$0.2000
DMG4407SSS-13 DISTI # C1S205700543109	Diodes Incorporated	MOSFETs RoHS: Compliant	1100	100:$0.2836 50:$0.4564 25:$0.4615 10:$0.4665

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: DMG4406LSS OMO.#: OMO-DMG4406LSS-1190	Neu und Original
	Mfr.#: DMG4406LSS-13-F OMO.#: OMO-DMG4406LSS-13-F-1190	Neu und Original
	Mfr.#: DMG4406LSS-13F OMO.#: OMO-DMG4406LSS-13F-1190	Neu und Original
	Mfr.#: DMG4407SSS OMO.#: OMO-DMG4407SSS-1190	Neu und Original
	Mfr.#: DMG4407SSS-13-F OMO.#: OMO-DMG4407SSS-13-F-1190	Neu und Original
	Mfr.#: DMG4406LSS-13 OMO.#: OMO-DMG4406LSS-13-DIODES	IGBT Transistors MOSFET N-Ch ENH 30V 11mOhm 10.3A 10V VGS
	Mfr.#: DMG4407SSS-13 OMO.#: OMO-DMG4407SSS-13-DIODES	MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 5000
Menge eingeben:

Der aktuelle Preis von DMG4407SSS-13 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,22 $~~; ~~0,22 $~~

10: ~~0,21 $~~; ~~2,05 $~~

100: ~~0,19 $~~; ~~19,43 $~~

500: ~~0,18 $~~; ~~91,75 $~~

1000: ~~0,17 $~~; ~~172,70 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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DMG4407SSS-13

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes