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S29GL01GS11TFI010

S29GL01GS11TFI010
Mfr. #:
S29GL01GS11TFI010
Hersteller:
Cypress Semiconductor
Beschreibung:
Flash 1G 3V 110ns Parallel NOR Flash
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
S29GL01GS11TFI010 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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Mehr Informationen:
S29GL01GS11TFI010 Mehr Informationen S29GL01GS11TFI010 Product Details
Produkteigenschaft
Attributwert
Hersteller
SPANSION
Produktkategorie
Erinnerung
Serie
GL-S
Verpackung
Tablett
Paket-Koffer
56-TFSOP (0.724", 18.40mm Width)
Betriebstemperatur
-40°C ~ 85°C (TA)
Schnittstelle
Parallel
Spannungsversorgung
2.7 V ~ 3.6 V
Lieferanten-Geräte-Paket
56-TSOP
Speichergröße
1G (64M x 16)
Speichertyp
FLASH - NOR
Geschwindigkeit
110ns
Format-Speicher
BLITZ
Tags
S29GL01GS11TFI01, S29GL01GS11TFI0, S29GL01GS11TFI, S29GL01GS11T, S29GL01GS11, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ress Semiconductor SCT
Parallel NOR Flash Memory, 1024 Mbit Density, 110 ns Initial Access Time, TSOP-56, RoHS
***ure Electronics
GL-S Series 1G (64M x 16) 3.6 V MirrorBit® Eclipse™ Flash Non-Volatile Memory
***et
NOR Flash Parallel 3V/3.3V 1Gbit 64M x 16bit 110ns 56-Pin TSOP Tray
***ark
MEMORY, FLASH, 1GBIT, 56TSOP; Memory Type:Flash - NOR; Memory Size:1Gbit; Supply Voltage Range:2.7V to 3.6V; Memory Case Style:TSOP; No. of Pins:56; Access Time:110ns; Interface Type:CFI; Operating Temperature Range:-40°C to +85°C; ;RoHS Compliant: Yes
MirrorBit® NOR GL Flash Memory Device - EXPANSION
Cypress has expanded it's offering of MirrorBit® NOR GL Flash Memory Devices to include the 100ns access speeds. This additional offering of Cypress MirrorBit® NOR GL Flash Memory now provide the fastest access times in the high-density versions available. MirrorBit® NOR GL Flash Memory Devices are ideal for today's embedded applications that require higher density, better performance, and lower power consumption.Learn MoreCypress MirrorBit® GL NOR Flash family is optimized for the voltage, density, cost-per-bit, reliability, performance, and scalability needs of a wide variety of embedded applications. With densities from 32MB to 2GB, each MirrorBit® NOR GL Flash Memory Device requires only a single 3.0V power supply for read and write functions and is entirely command set compatible with the JEDEC Flash standards. The Cypress MirrorBit® GL Flash Memory Device family supports Cypress' Universal Footprint, which provides one footprint across all densities, product families, and process technologies, allowing manufacturers to design a single platform and simply scale Flash memory capacity up or down, depending on the features and functionality of the target end system.View the entire MirrorBit® NOR GL Series
MirrorBit® NOR GL Flash Memory Device
Cypress MirrorBit® GL NOR Flash family is optimized for voltage, density, cost-per-bit, reliability, performance, and scalability needs. With densities from 32MB-2GB, each MirrorBit® Memory Device requires only a single 3.0V power supply for read and write functions. The entire command set compatible with the JEDEC Flash standards.
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
Teil # Mfg. Beschreibung Aktie Preis
S29GL01GS11TFI010
DISTI # V99:2348_06272074		Cypress SemiconductorS29GL01GS11TFI010**COP-SA
9906
1875918
RoHS: Compliant		55
  • 1001:$7.3360
  • 546:$7.5620
  • 273:$7.5640
  • 182:$7.7280
  • 91:$8.4810
  • 25:$8.5310
  • 10:$8.7160
  • 1:$9.3670
S29GL01GS11TFI010
DISTI # S29GL01GS11TFI010-ND		Cypress SemiconductorIC FLASH 1G PARALLEL 56TSOP
RoHS: Compliant
Min Qty: 1
Container: Tray		416In Stock
  • 1001:$8.0845
  • 546:$8.3632
  • 273:$8.4500
  • 182:$8.8898
  • 91:$10.0978
  • 25:$10.1536
  • 10:$10.3890
  • 1:$11.2200
S29GL01GS11TFI010
DISTI # 31442648		Cypress SemiconductorS29GL01GS11TFI010**COP-SA
9906
1875918
RoHS: Compliant		91
  • 91:$9.8933
S29GL01GS11TFI010
DISTI # 31046364		Cypress SemiconductorS29GL01GS11TFI010**COP-SA
9906
1875918
RoHS: Compliant		55
  • 25:$8.5310
  • 10:$8.7160
  • 1:$9.3670
S29GL01GS11TFI010
DISTI # 39T5700		Cypress SemiconductorFLASH MEMORY, 1024MBIT, 110NS, 56-TSOP,Flash Memory Type:Parallel NOR,Memory Size:1Gbit,Flash Memory Configuration:64M x 16bit,IC Interface Type:Parallel,Memory Case Style:TSOP,No. of Pins:56Pins,Clock Frequency:- RoHS Compliant: Yes1
  • 1:$9.6300
  • 10:$8.9100
  • 25:$8.7100
  • 50:$8.6600
  • 100:$7.8300
  • 250:$7.6500
S29GL01GS11TFI010Spansion 
RoHS: Not Compliant		101
  • 1000:$8.9300
  • 500:$9.4000
  • 100:$9.7900
  • 25:$10.2100
  • 1:$11.0000
S29GL01GS11TFI010
DISTI # 797-S29GL01GS11TFI01		Cypress SemiconductorNOR Flash 1G 3V 110ns Parallel NOR Flash
RoHS: Compliant		88
  • 1:$9.6300
  • 10:$8.9100
  • 25:$8.7100
  • 50:$8.6600
  • 100:$7.8300
  • 250:$7.6500
S29GL01GS11TFI010Cypress SemiconductorGL-S Series 1G (64M x 16) 3.6 V MirrorBit Eclipse Flash Non-Volatile Memory
RoHS: Compliant		172Tray
  • 2:$12.6900
  • 10:$10.2300
  • 25:$9.3900
  • 50:$8.8000
  • 100:$8.2500
S29GL01GS11TFI010
DISTI # 2706065		Cypress SemiconductorFLASH MEMORY, 1024MBIT, 110NS, 56-TSOP
RoHS: Compliant		1
  • 1:$15.2400
  • 10:$14.1100
  • 25:$13.7900
  • 50:$13.7100
  • 100:$12.4400
S29GL01GS11TFI010.
DISTI # 2136246		Cypress SemiconductorMEMORY, FLASH, 1GBIT, 56TSOP
RoHS: Compliant		1
  • 1:$15.2400
  • 10:$14.1100
  • 25:$13.7900
  • 50:$13.7100
  • 100:$12.4400
S29GL01GS11TFI010
DISTI # XSFP00000077465		CYPRESS SEMICONDUCTOR 
RoHS: Compliant		116
  • 91:$16.9200
  • 116:$15.8600
S29GL01GS11TFI010
DISTI # XSKDRABV0032340		CYPRESS SEMICONDUCTOR 
RoHS: Compliant		72
  • 46:$10.9400
  • 72:$10.2100
S29GL01GS11TFI010
DISTI # 2706065		Cypress SemiconductorFLASH MEMORY, 1024MBIT, 110NS, 56-TSOP
RoHS: Compliant		1
  • 100:£6.8900
  • 50:£7.6200
  • 25:£7.6500
  • 10:£7.8300
  • 1:£8.4600
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 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1500
Menge eingeben:
Der aktuelle Preis von S29GL01GS11TFI010 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
11,48 $
11,48 $
10
10,90 $
109,01 $
100
10,33 $
1 032,75 $
500
9,75 $
4 876,90 $
1000
9,18 $
9 180,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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