FDFME3N311ZT

Mfr. #:: FDFME3N311ZT
Hersteller:: ON Semiconductor
Beschreibung:: MOSFET N-CH 30V 1.8A 6MICROFET
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: FDFME3N311ZT Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: FAIRCHILD

Produktkategorie: FETs - Einzeln

Verpackung: Spule

Gewichtseinheit: 0.000889 oz

Montageart: SMD/SMT

Paket-Koffer: microFET-6

Technologie: Si

Anzahl der Kanäle: 1 Channel

Aufbau: Single mit Schottky-Diode

Transistor-Typ: 1 N-Channel

Pd-Verlustleistung: 1.1 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 2.8 ns

Anstiegszeit: 16 ns

Vgs-Gate-Source-Spannung: 12 V

ID-Dauer-Drain-Strom: 1.6 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Rds-On-Drain-Source-Widerstand: 299 mOhms

Transistor-Polarität: N-Kanal

Typische-Ausschaltverzögerungszeit: 35 ns

Typische-Einschaltverzögerungszeit: 12 ns

Vorwärts-Transkonduktanz-Min: 2.8 S

Kanal-Modus: Erweiterung

Tags: FDFME, FDFM, FDF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDFME3N311ZT Beschreibung

***Semiconductor: Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30 V, 1.8 A, 299 mΩ

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.299ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:0.5W ;RoHS Compliant: Yes

***rchild Semiconductor: This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and on-state resistance. An independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency.The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
FDFME3N311ZT DISTI # FDFME3N311ZTTR-ND	ON Semiconductor	MOSFET N-CH 30V 1.8A 6MICROFET RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Limited Supply - Call	5000:$0.2525
FDFME3N311ZT DISTI # FDFME3N311ZTCT-ND	ON Semiconductor	MOSFET N-CH 30V 1.8A 6MICROFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDFME3N311ZT DISTI # FDFME3N311ZTDKR-ND	ON Semiconductor	MOSFET N-CH 30V 1.8A 6MICROFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDFME3N311ZT DISTI # FDFME3N311ZT	ON Semiconductor	Trans MOSFET N-CH 30V 1.8A 6-Pin MicroFET T/R (Alt: FDFME3N311ZT) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	5000:€0.4469 10000:€0.3479 20000:€0.2889 30000:€0.2429 50000:€0.2249
FDFME3N311ZT DISTI # 73R3644	ON Semiconductor	MOSFET Transistor,Transistor Polarity:N Channel,Continuous Drain Current Id:1.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.299ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,Power Dissipation Pd:500mW RoHS Compliant: Yes	0	1:$0.6400 25:$0.5270 50:$0.4340 100:$0.3400 250:$0.3170 500:$0.2950 1000:$0.2720
FDFME3N311ZT DISTI # 64R3000	ON Semiconductor	MOSFET Transistor, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:1.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.299ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,No. of Pins:6Pins RoHS Compliant: Yes	0	1:$0.2860 5000:$0.2840 10000:$0.2500 25000:$0.2250 50000:$0.2130
FDFME3N311ZT	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 1.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	60662	1000:$0.2500 500:$0.2600 100:$0.2700 25:$0.2900 1:$0.3100
FDFME3N311ZT DISTI # 1813536	ON Semiconductor	MOSFET Transistor RoHS: Compliant	0	5000:£0.2410
FDFME3N311ZT DISTI # 1813536	ON Semiconductor	MOSFET Transistor RoHS: Compliant	0	5000:$0.9780

Verwandte Produkte

Bild

Teil #

Beschreibung

Mfr.#: FDFME3N311ZT

OMO.#: OMO-FDFME3N311ZT

MOSFET Int. NCh PowerTrench MOSFET & Sch. Diode

Mfr.#: FDFME3N311ZT

OMO.#: OMO-FDFME3N311ZT-ON-SEMICONDUCTOR

MOSFET N-CH 30V 1.8A 6MICROFET

Mfr.#: FDFME3N311ZT/1T

OMO.#: OMO-FDFME3N311ZT-1T-1190

Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2000
Menge eingeben:

Der aktuelle Preis von FDFME3N311ZT dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,32 $~~; ~~0,32 $~~

10: ~~0,30 $~~; ~~3,04 $~~

100: ~~0,29 $~~; ~~28,76 $~~

500: ~~0,27 $~~; ~~135,80 $~~

1000: ~~0,26 $~~; ~~255,60 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

FDFME 3
FDFM 42
FDF 129

FDFME3N311ZT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes