IRFH7446TRPbF

IRFH7446TRPbF
Mfr. #:
IRFH7446TRPbF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 40V 85A 3.3mOhm 65nC StrongIRFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFH7446TRPbF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFH7446TRPbF DatasheetIRFH7446TRPbF Datasheet (P4-P6)IRFH7446TRPbF Datasheet (P7-P9)IRFH7446TRPbF Datasheet (P10-P11)
ECAD Model:
Mehr Informationen:
IRFH7446TRPbF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PQFN-8
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
117 A
Rds On - Drain-Source-Widerstand:
3.3 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.9 V
Qg - Gate-Ladung:
98 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
78 W
Kanalmodus:
Erweiterung
Handelsname:
StarkIRFET
Verpackung:
Spule
Höhe:
0.83 mm
Länge:
6 mm
Breite:
5 mm
Marke:
Infineon / IR
Vorwärtstranskonduktanz - Min:
159 S
Abfallzeit:
26 ns
Produktart:
MOSFET
Anstiegszeit:
37 ns
Werkspackungsmenge:
4000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
33 ns
Typische Einschaltverzögerungszeit:
11 ns
Teil # Aliase:
SP001577894
Gewichtseinheit:
0.003210 oz
Tags
IRFH7446, IRFH74, IRFH7, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 40 V 3.3 mOhm 65 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ark
T&R / MOSFET, 40V, 85A, 3.3 mOhm, 65 nC Qg, PQFN56
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a Lead Free PQFN 5mm x 6mm package, PG-TDSON-8, RoHS
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Push-Pull
***nell
MOSFET, N-CH, 40V, 85A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PQFN; No. of Pins:5; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 117 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 3.3 / Gate-Source Voltage V = 20 / Fall Time ns = 26 / Rise Time ns = 37 / Turn-OFF Delay Time ns = 33 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 78
***ical
Trans MOSFET N-CH Si 40V 123A Automotive 8-Pin QFN EP T/R
***ineon SCT
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a PQFN 5 x 6 E package, PG-TDSON-8, RoHS
***
N-Channel 4 V 95A (Tc) 4.3W (Ta), 94W (Tc) Surface Mount 8-PQFN (5x6)
***ark
MOSFET, N CHANNEL, 40V, 95A, QFN-8
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 95A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
*** Electronic Components
MOSFET Automotive HEXFET COOLiRFET
***ineon
Target Applications: Relay Replacement; Window Lifter
***or
MOSFET N-CH 40V 95A TDSON-8-10
***S
French Electronic Distributor since 1988
***i-Key Marketplace
AUIRFN8403 - 20V-40V N-CHANNEL A
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***ark
TAPE AND REEL // MOSFET, 30V, 50A, 4.1 mOhm, 15nC Qg, PQFN5x6
***et Europe
Trans MOSFET N-CH 30V 23A 8-Pin PQFN EP T/R
***
N-Channel 3 V 23A (Ta), 9A (Tc) 3.6W (Ta), 54W (Tc) Surface Mount PQFN (5x6)
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 1.3C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET
***nell
MOSFET, N-CH, 30V, 50A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 54W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS
***
N-Channel 4 V 26A (Ta), 85A (Tc) 3.6W (Ta), 14W (Tc) Surface Mount 8-PQFN (5x6)
***ineon
Benefits: Low RDSon (less than 4.7mOhms @ Vgs = 4.5V) Lowers Conduction Losses; Low Thermal Resistance to PCB (less than 1.2C/W) Enables better thermal dissipation; 100% Rg tested for Increased Reliability; Low Profile (less than 0.9 mm) results in Increased Power Density; Industry-Standard Pinout for Multi-Vendor Compatibility; Compatible with Existing Surface Mount Techniques for Easier Manufacturing; Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen; MSL1, Industrial Qualification results in Increased Reliability | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package
***(Formerly Allied Electronics)
MOSFET, 30V, 16A, 7.1 MOHM, 9.6 NC QG, PQFN33
***et
Trans MOSFET N-CH 30V 16A 8-Pin QFN T/R
***ment14 APAC
MOSFET, N CH, 30V, 16A, PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:16mA; Package / Case:PQFN; Power Dissipation Pd:2.8W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
***ernational Rectifier
-30V Single P-Channel HEXFET Power MOSFET in a PQFN 3mm x 3mm package
***(Formerly Allied Electronics)
MOSFET, P-CHANNEL, -30V, -11A, 14.6 MOHM, 25VGS, PQFN3X3
***ment14 APAC
MOSFET,P CH,DIODE,30V,11A,PQFN33; Transistor Polarity:P Channel; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:-20V; Power Dissipation Pd:2.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:-11A; Power Dissipation Pd:2.8W; Voltage Vgs Max:-25V
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
Teil # Mfg. Beschreibung Aktie Preis
IRFH7446TRPBF
DISTI # V72:2272_13889743
Infineon Technologies AGTrans MOSFET N-CH Si 40V 117A 8-Pin QFN EP T/R
RoHS: Compliant
4000
  • 3000:$0.4869
  • 1000:$0.5410
  • 500:$0.6592
  • 250:$0.7322
  • 100:$0.7927
  • 25:$0.9095
  • 10:$0.9209
  • 1:$1.0950
IRFH7446TRPBF
DISTI # IRFH7446TRPBFCT-ND
Infineon Technologies AGMOSFET N CH 40V 85A PQFN 5X6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3419In Stock
  • 1000:$0.7096
  • 500:$0.8988
  • 100:$1.1589
  • 10:$1.4660
  • 1:$1.6600
IRFH7446TRPBF
DISTI # IRFH7446TRPBFDKR-ND
Infineon Technologies AGMOSFET N CH 40V 85A PQFN 5X6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3419In Stock
  • 1000:$0.7096
  • 500:$0.8988
  • 100:$1.1589
  • 10:$1.4660
  • 1:$1.6600
IRFH7446TRPBF
DISTI # IRFH7446TRPBFTR-ND
Infineon Technologies AGMOSFET N CH 40V 85A PQFN 5X6
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
On Order
  • 4000:$0.6430
IRFH7446TRPBF
DISTI # 29474714
Infineon Technologies AGTrans MOSFET N-CH Si 40V 117A 8-Pin QFN EP T/R
RoHS: Compliant
4000
  • 3000:$0.4869
  • 1000:$0.5410
  • 500:$0.6593
  • 250:$0.7322
  • 100:$0.7927
  • 25:$0.8289
  • 15:$0.9210
IRFH7446TRPBF
DISTI # 31271665
Infineon Technologies AGTrans MOSFET N-CH Si 40V 117A 8-Pin QFN EP T/R
RoHS: Compliant
4000
  • 4000:$0.7383
IRFH7446TRPBF
DISTI # IRFH7446TRPBF
Infineon Technologies AGTrans MOSFET N-CH 40V 117A 8-Pin PQFN T/R - Tape and Reel (Alt: IRFH7446TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel
Americas - 0
  • 4000:$0.4809
  • 8000:$0.4629
  • 16000:$0.4469
  • 24000:$0.4319
  • 40000:$0.4239
IRFH7446TRPBF
DISTI # IRFH7446TRPBF
Infineon Technologies AGTrans MOSFET N-CH 40V 117A 8-Pin PQFN T/R (Alt: IRFH7446TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel
Asia - 0
    IRFH7446TRPBF
    DISTI # 55W4110
    Infineon Technologies AGMOSFET Transistor, N Channel, 85 A, 40 V, 0.0025 ohm, 10 V, 2.2 V RoHS Compliant: Yes4552
    • 1:$1.5900
    • 10:$1.3700
    • 100:$1.0700
    • 500:$0.9540
    • 1000:$0.7730
    IRFH7446TRPBF
    DISTI # 70394766
    Infineon Technologies AGIRFH7446TRPBF N-channel MOSFET Transistor,85 A,40 V,8-Pin PQFN
    RoHS: Compliant
    0
    • 4000:$0.8000
    IRFH7446TRPbF
    DISTI # 942-IRFH7446TRPBF
    Infineon Technologies AGMOSFET 40V 85A 3.3mOhm 65nC StrongIRFET
    RoHS: Compliant
    11700
    • 1:$1.3700
    • 10:$1.1700
    • 100:$0.8980
    • 500:$0.7940
    • 1000:$0.6270
    IRFH7446TRPBF
    DISTI # 7769169P
    Infineon Technologies AGSTRONGIRFET MOSFET N-CH 40V 85A PQFN8, RL3320
    • 15:£0.8400
    • 30:£0.7700
    IRFH7446TRPBF
    DISTI # 2253809
    Infineon Technologies AGMOSFET, N-CH, 40V, 85A, PQFN
    RoHS: Compliant
    4552
    • 1:$2.1700
    • 10:$1.8500
    • 100:$1.4200
    • 500:$1.2600
    • 1000:$0.9930
    • 4000:$0.8800
    • 8000:$0.8470
    IRFH7446TRPBF
    DISTI # C1S322000490099
    Infineon Technologies AGTrans MOSFET N-CH Si 40V 117A 8-Pin QFN EP T/R
    RoHS: Compliant
    4000
    • 100:$0.7551
    • 50:$0.9180
    • 25:$0.9224
    • 10:$0.9268
    IRFH7446TRPBF
    DISTI # C1S322000490105
    Infineon Technologies AGTrans MOSFET N-CH Si 40V 117A 8-Pin QFN EP T/R
    RoHS: Compliant
    4000
    • 4000:$0.5660
    IRFH7446TRPBF
    DISTI # 2253809
    Infineon Technologies AGMOSFET, N-CH, 40V, 85A, PQFN
    RoHS: Compliant
    5042
    • 5:£0.8480
    • 25:£0.7780
    • 100:£0.6860
    • 250:£0.6470
    • 500:£0.6070
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1992
    Menge eingeben:
    Der aktuelle Preis von IRFH7446TRPbF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,30 $
    1,30 $
    10
    1,11 $
    11,10 $
    100
    0,85 $
    85,20 $
    500
    0,75 $
    376,50 $
    1000
    0,59 $
    594,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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