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APT75GP120B2G

APT75GP120B2G
Mfr. #:
APT75GP120B2G
Hersteller:
Microchip / Microsemi
Beschreibung:
IGBT Transistors FG, IGBT, 1200V, TO-247 T-MAX, RoHS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
APT75GP120B2G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Mikrochip
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
T-Max-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1.2 kV
Kollektor-Emitter-Sättigungsspannung:
3.3 V
Maximale Gate-Emitter-Spannung:
30 V
Kontinuierlicher Kollektorstrom bei 25 C:
100 A
Pd - Verlustleistung:
1.042 kW
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
100 A
Höhe:
5.31 mm
Länge:
21.46 mm
Betriebstemperaturbereich:
- 55 C to + 150 C
Breite:
16.26 mm
Marke:
Mikrochip / Mikrosemi
Kontinuierlicher Kollektorstrom:
100 A
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
1
Unterkategorie:
IGBTs
Handelsname:
POWER MOS 7 IGBT
Tags
APT75GP, APT75G, APT75, APT7, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
APT75GP120B2G Single 1200 V 100 A 1042 W 320 nC POWER MOS 7® IGBT - TO-247-3
***et
Trans IGBT Chip N-CH 1.2KV 100A 3-Pin(3+Tab) T-MAX
***i-Key
IGBT 1200V 100A 1042W TMAX
***hardson RFPD
POWER IGBT TRANSISTOR
Teil # Mfg. Beschreibung Aktie Preis
APT75GP120B2G
DISTI # V36:1790_09095981		Microsemi CorporationTrans IGBT Chip N-CH 1.2KV 100A 3-Pin(3+Tab) T-MAX
RoHS: Compliant		0
    APT75GP120B2G
    DISTI # APT75GP120B2G-ND    		Microsemi CorporationIGBT 1200V 100A 1042W TMAX
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		3195In Stock
    • 500:$18.9181
    • 100:$21.6599
    • 25:$23.3048
    • 10:$25.3610
    • 1:$27.4200
    APT75GP120B2G
    DISTI # APT75GP120B2G    		Microchip Technology IncPower MOS 7 IGBT N-Channel 1200V 100A 3-Pin TO-247 - Rail/Tube (Alt: APT75GP120B2G)
    RoHS: Compliant
    Min Qty: 90
    Container: Tube    		Americas - 0
    • 900:$16.1900
    • 450:$16.3900
    • 270:$16.9900
    • 180:$17.4900
    • 90:$18.0900
    APT75GP120B2G
    DISTI # 494-APT75GP120B2G    		Microchip Technology IncIGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
    RoHS: Compliant    		340
    • 1:$25.5900
    • 5:$24.4400
    • 10:$23.6800
    • 25:$21.7600
    • 50:$21.1000
    • 100:$20.1000
    • 250:$18.4700
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    Verfügbarkeit
    Aktie:
    340
    Auf Bestellung:
    2323
    Menge eingeben:
    Der aktuelle Preis von APT75GP120B2G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    25,59 $
    25,59 $
    5
    24,44 $
    122,20 $
    10
    23,68 $
    236,80 $
    25
    21,76 $
    544,00 $
    50
    21,10 $
    1 055,00 $
    100
    20,10 $
    2 010,00 $
    250
    18,47 $
    4 617,50 $
    500
    17,01 $
    8 505,00 $
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