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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| PMV32UP,215 DISTI # V79:2366_19866484 | Nexperia | PMV32UP/TO-236AB/REELLP// | 43712 |
|
| PMV32UP,215 DISTI # V36:1790_06540566 | Nexperia | PMV32UP/TO-236AB/REELLP// | 0 | |
| PMV32UP,215 DISTI # 1727-1153-1-ND | Nexperia | MOSFET P-CH 20V 4A SOT-23 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 5617In Stock |
|
| PMV32UP,215 DISTI # 1727-1153-6-ND | Nexperia | MOSFET P-CH 20V 4A SOT-23 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 5617In Stock |
|
| PMV32UP,215 DISTI # 1727-1153-2-ND | Nexperia | MOSFET P-CH 20V 4A SOT-23 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | 3000In Stock |
|
| PMV32UP,215 DISTI # 26760301 | Nexperia | PMV32UP/TO-236AB/REELLP// | 43712 |
|
| PMV32UP215 DISTI # PMV32UP215 | Avnet, Inc. | - Bulk (Alt: PMV32UP215) Min Qty: 1924 Container: Bulk | Americas - 0 |
|
| PMV32UP,215 DISTI # PMV32UP,215 | Nexperia | Trans MOSFET P-CH 20V 4A 3-Pin TO-236AB T/R - Tape and Reel (Alt: PMV32UP,215) RoHS: Compliant Min Qty: 6000 Container: Reel | Americas - 0 |
|
| PMV32UP,215 DISTI # PMV32UP,215 | Nexperia | Trans MOSFET P-CH 20V 4A 3-Pin TO-236AB T/R (Alt: PMV32UP,215) RoHS: Compliant Min Qty: 15000 Container: Tape and Reel | Asia - 0 |
|
| PMV32UP,215 DISTI # 47T2356 | Nexperia | MOSFET, P CHANNEL, 20V, 4A, SOT23,Transistor Polarity:P Channel,Continuous Drain Current Id:-4A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.032ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-700mV RoHS Compliant: Yes | 4483 |
|
| PMV32UP,215. DISTI # 28AC1158 | Nexperia | Transistor Polarity:P Channel,Continuous Drain Current Id:-4A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.032ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-700mV,Power Dissipation Pd:510mW,Product Range:- RoHS Compliant: Yes | 0 | |
| PMV32UP,215 DISTI # 771-PMV32UP215 | Nexperia | MOSFET P-CH -20 V -4 A RoHS: Compliant | 9567 |
|
| PMV32UP215 | NXP Semiconductors | Now Nexperia PMV32UP - Small Signal Field-Effect Transistor, 4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB RoHS: Not Compliant | 228000 |
|
| PMV32UP,215 DISTI # 7982798P | Nexperia | TRENCH MOSFET P-CHANNEL 20V 4A TO-236AB, RL | 90 |
|
| PMV32UP,215 DISTI # 7982798 | Nexperia | TRENCH MOSFET P-CHANNEL 20V 4A TO-236AB, PK | 1440 |
|
| PMV32UP.215 DISTI # PMV32UP.215 | Nexperia | Transistor: P-MOSFET,unipolar,-20V,-2.5A,930mW,SOT23 | 3462 |
|
| PMV32UP,215 DISTI # XSKDRABV0025982 | Nexperia | PowerField-EffectTransistor,14.9AI(D),30V,0.019ohm,1-Element,P-Channel,Silicon,Metal-oxideSemiconductorFET,MS-012AA RoHS: Compliant | 6000 in Stock0 on Order |
|
| PMV32UP,215 DISTI # XSKDRABS0015907 | Nexperia | RectifierDiode,Schottky,1Element,20VV(RRM),Silicon RoHS: Compliant | 258000 in Stock0 on Order |
|
| PMV32UP,215 DISTI # 1894624RL | Nexperia | MOSFET, P CH, 20V, 4A, SOT23 RoHS: Compliant | 0 |
|
| PMV32UP,215 DISTI # 1894624 | Nexperia | MOSFET, P CH, 20V, 4A, SOT23 RoHS: Compliant | 4618 |
|
| PMV32UP,215 DISTI # 1894624 | Nexperia | MOSFET, P CH, 20V, 4A, SOT23 | 6968 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: PMV32UP,215 OMO.#: OMO-PMV32UP-215 |
MOSFET P-CH -20 V -4 A |
|
Mfr.#: PMV32UP,215 OMO.#: OMO-PMV32UP-215-NEXPERIA |
MOSFET P-CH 20V 4A SOT-23 |
|
Mfr.#: PMV32UP,215-CUT TAPE |
Neu und Original |