SI8483DB-T2-E1

SI8483DB-T2-E1
Mfr. #:
SI8483DB-T2-E1
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET -12V Vds 10V Vgs MICRO FOOT 1.5 x 1
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI8483DB-T2-E1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI8483DB-T2-E1 DatasheetSI8483DB-T2-E1 Datasheet (P4-P6)SI8483DB-T2-E1 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SI8483DB-T2-E1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
MicroFoot-6
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
12 V
Id - Kontinuierlicher Drainstrom:
16 A
Rds On - Drain-Source-Widerstand:
22 mOhms
Vgs th - Gate-Source-Schwellenspannung:
800 mV
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
65 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
13 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI8
Transistortyp:
1 P-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
10 S
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
25 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
40 ns
Typische Einschaltverzögerungszeit:
20 ns
Tags
SI848, SI84, SI8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Trans MOSFET P-CH 12V 8.7A 6-Pin Micro Foot T/R
***ure Electronics
MOSFET -12V Vds 10V Vgs MICRO FOOT 1.5 x 1
***i-Key
MOSFET P-CH 12V 16A 6MICRO FOOT
***nell
MOSFET, P-CH, 12V, MICROFOOT; Transistor Polarity:P Channel; Continuous Drain Current Id:-16A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:13W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:MICRO FOOT; No. of Pins:6; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
MicroFoot® Power MOSFETs
Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Teil # Mfg. Beschreibung Aktie Preis
SI8483DB-T2-E1
DISTI # V36:1790_09216573
Vishay IntertechnologiesTrans MOSFET P-CH 12V 8.7A 6-Pin Micro Foot T/R
RoHS: Compliant
0
    SI8483DB-T2-E1
    DISTI # V72:2272_09216573
    Vishay IntertechnologiesTrans MOSFET P-CH 12V 8.7A 6-Pin Micro Foot T/R
    RoHS: Compliant
    0
      SI8483DB-T2-E1
      DISTI # SI8483DB-T2-E1CT-ND
      Vishay SiliconixMOSFET P-CH 12V 16A MICROFOOT
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)
      78In Stock
      • 1000:$0.2239
      • 500:$0.2898
      • 100:$0.3688
      • 10:$0.4940
      • 1:$0.5800
      SI8483DB-T2-E1
      DISTI # SI8483DB-T2-E1DKR-ND
      Vishay SiliconixMOSFET P-CH 12V 16A MICROFOOT
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      78In Stock
      • 1000:$0.2239
      • 500:$0.2898
      • 100:$0.3688
      • 10:$0.4940
      • 1:$0.5800
      SI8483DB-T2-E1
      DISTI # SI8483DB-T2-E1TR-ND
      Vishay SiliconixMOSFET P-CH 12V 16A MICROFOOT
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)
      On Order
      • 30000:$0.1705
      • 15000:$0.1726
      • 6000:$0.1854
      • 3000:$0.1982
      SI8483DB-T2-E1
      DISTI # SI8483DB-T2-E1
      Vishay IntertechnologiesTrans MOSFET P-CH 12V 8.7A 6-Pin Micro Foot T/R - Tape and Reel (Alt: SI8483DB-T2-E1)
      RoHS: Not Compliant
      Min Qty: 3000
      Container: Reel
      Americas - 0
      • 30000:$0.1562
      • 18000:$0.1605
      • 12000:$0.1650
      • 6000:$0.1720
      • 3000:$0.1773
      SI8483DB-T2-E1
      DISTI # 99W9637
      Vishay IntertechnologiesMOSFET Transistor, P Channel, -16 A, -12 V, 0.022 ohm, -4.5 V, -400 mV0
      • 50000:$0.1580
      • 30000:$0.1650
      • 20000:$0.1770
      • 10000:$0.1890
      • 5000:$0.2050
      • 1:$0.2100
      SI8483DB-T2-E1
      DISTI # 63W4156
      Vishay IntertechnologiesMOSFET Transistor, P Channel, -16 A, -12 V, 0.022 ohm, -4.5 V, -400 mV RoHS Compliant: Yes360
      • 1000:$0.2100
      • 500:$0.2720
      • 250:$0.3010
      • 100:$0.3300
      • 50:$0.3690
      • 25:$0.4070
      • 10:$0.4450
      • 1:$0.5860
      SI8483DB-T2-E1.
      DISTI # 23AC9607
      Vishay IntertechnologiesTransistor Polarity:P Channel,Continuous Drain Current Id:-16A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.022ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-400mV,Power Dissipation Pd:13W,No. of Pins:6PinsRoHS Compliant: No0
      • 50000:$0.1580
      • 30000:$0.1650
      • 20000:$0.1770
      • 10000:$0.1890
      • 5000:$0.2050
      • 1:$0.2100
      SI8483DB-T2-E1
      DISTI # 78-SI8483DB-T2-E1
      Vishay IntertechnologiesMOSFET -12V Vds 10V Vgs MICRO FOOT 1.5 x 1
      RoHS: Compliant
      0
      • 1:$0.5700
      • 10:$0.4390
      • 100:$0.3260
      • 500:$0.2670
      • 1000:$0.2070
      • 3000:$0.2030
      SI8483DB-T2-E1Vishay Intertechnologies 3000
        SI8483DBT2E1Vishay IntertechnologiesPower Field-Effect Transistor, 16A I(D), 12V, 0.035ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant
        3000
          SI8483DB-T2-E1Vishay IntertechnologiesMOSFET -12V Vds 10V Vgs MICRO FOOT 1.5 x 1
          RoHS: Compliant
          Americas - 51000
            SI8483DB-T2-E1
            DISTI # 2283651
            Vishay IntertechnologiesMOSFET, P-CH, 12V, MICROFOOT
            RoHS: Compliant
            60
            • 3000:$0.3130
            • 1000:$0.3200
            • 500:$0.4140
            • 100:$0.5030
            • 10:$0.6790
            • 1:$0.8920
            SI8483DB-T2-E1
            DISTI # 2283651
            Vishay IntertechnologiesMOSFET, P-CH, 12V, MICROFOOT60
            • 500:£0.2110
            • 250:£0.2350
            • 100:£0.2580
            • 25:£0.3690
            • 5:£0.3930
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            Mfr.#: LIS2DE12TR

            OMO.#: OMO-LIS2DE12TR-STMICROELECTRONICS

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            ABM11W-16.0000MHZ-6-B1U-T3

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            Crystal 16MHz ±10ppm (Tol) ±10ppm (Stability) 6pF FUND 200Ohm 4-Pin SMD T/R
            TPD1E10B09QDPYRQ1

            Mfr.#: TPD1E10B09QDPYRQ1

            OMO.#: OMO-TPD1E10B09QDPYRQ1-TEXAS-INSTRUMENTS

            TVS DIODE 5.5V 14V 2X1SON
            TPS22810DBVR

            Mfr.#: TPS22810DBVR

            OMO.#: OMO-TPS22810DBVR-TEXAS-INSTRUMENTS

            IC PWR SWITCH N-CHAN 1:1 6SOT23
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            OMO.#: OMO-TPS610994YFFR-TEXAS-INSTRUMENTS

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            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            2000
            Menge eingeben:
            Der aktuelle Preis von SI8483DB-T2-E1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
            Referenzpreis (USD)
            Menge
            Stückpreis
            ext. Preis
            1
            0,57 $
            0,57 $
            10
            0,44 $
            4,39 $
            100
            0,33 $
            32,60 $
            500
            0,27 $
            133,50 $
            1000
            0,21 $
            207,00 $
            Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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