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Teil # | Mfg. | Beschreibung | Aktie | Preis |
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SI8483DB-T2-E1 DISTI # V36:1790_09216573 | Vishay Intertechnologies | Trans MOSFET P-CH 12V 8.7A 6-Pin Micro Foot T/R RoHS: Compliant | 0 | |
SI8483DB-T2-E1 DISTI # V72:2272_09216573 | Vishay Intertechnologies | Trans MOSFET P-CH 12V 8.7A 6-Pin Micro Foot T/R RoHS: Compliant | 0 | |
SI8483DB-T2-E1 DISTI # SI8483DB-T2-E1CT-ND | Vishay Siliconix | MOSFET P-CH 12V 16A MICROFOOT RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 78In Stock |
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SI8483DB-T2-E1 DISTI # SI8483DB-T2-E1DKR-ND | Vishay Siliconix | MOSFET P-CH 12V 16A MICROFOOT RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 78In Stock |
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SI8483DB-T2-E1 DISTI # SI8483DB-T2-E1TR-ND | Vishay Siliconix | MOSFET P-CH 12V 16A MICROFOOT RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | On Order |
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SI8483DB-T2-E1 DISTI # SI8483DB-T2-E1 | Vishay Intertechnologies | Trans MOSFET P-CH 12V 8.7A 6-Pin Micro Foot T/R - Tape and Reel (Alt: SI8483DB-T2-E1) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
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SI8483DB-T2-E1 DISTI # 99W9637 | Vishay Intertechnologies | MOSFET Transistor, P Channel, -16 A, -12 V, 0.022 ohm, -4.5 V, -400 mV | 0 |
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SI8483DB-T2-E1 DISTI # 63W4156 | Vishay Intertechnologies | MOSFET Transistor, P Channel, -16 A, -12 V, 0.022 ohm, -4.5 V, -400 mV RoHS Compliant: Yes | 360 |
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SI8483DB-T2-E1. DISTI # 23AC9607 | Vishay Intertechnologies | Transistor Polarity:P Channel,Continuous Drain Current Id:-16A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.022ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-400mV,Power Dissipation Pd:13W,No. of Pins:6PinsRoHS Compliant: No | 0 |
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SI8483DB-T2-E1 DISTI # 78-SI8483DB-T2-E1 | Vishay Intertechnologies | MOSFET -12V Vds 10V Vgs MICRO FOOT 1.5 x 1 RoHS: Compliant | 0 |
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SI8483DB-T2-E1 | Vishay Intertechnologies | 3000 | ||
SI8483DBT2E1 | Vishay Intertechnologies | Power Field-Effect Transistor, 16A I(D), 12V, 0.035ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 3000 | |
SI8483DB-T2-E1 | Vishay Intertechnologies | MOSFET -12V Vds 10V Vgs MICRO FOOT 1.5 x 1 RoHS: Compliant | Americas - 51000 | |
SI8483DB-T2-E1 DISTI # 2283651 | Vishay Intertechnologies | MOSFET, P-CH, 12V, MICROFOOT RoHS: Compliant | 60 |
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SI8483DB-T2-E1 DISTI # 2283651 | Vishay Intertechnologies | MOSFET, P-CH, 12V, MICROFOOT | 60 |
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Bild | Teil # | Beschreibung |
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Mfr.#: ADS1114BQDGSRQ1 OMO.#: OMO-ADS1114BQDGSRQ1 |
Analog to Digital Converters - ADC ADS1114B AUTOMOTIVE | |
Mfr.#: TPD1E10B09QDPYRQ1 OMO.#: OMO-TPD1E10B09QDPYRQ1 |
TVS Diodes / ESD Suppressors Automotive 1-channel ESD in 0402 package with 10pF capacitance and 9V breakdown 2-X1SON -40 to 125 | |
Mfr.#: TPS22810DBVR OMO.#: OMO-TPS22810DBVR |
Power Switch ICs - Power Distribution TPS22810 2.7-18-V 2A 79mOhm On-Resistanc | |
Mfr.#: TPS610994YFFR OMO.#: OMO-TPS610994YFFR |
Switching Voltage Regulators DEVICE FOR TPS610994 | |
Mfr.#: LIS2DE12TR |
ACCEL 2-16G I2C/SPI 12LGA | |
Mfr.#: ABM11W-16.0000MHZ-6-B1U-T3 |
Crystal 16MHz ±10ppm (Tol) ±10ppm (Stability) 6pF FUND 200Ohm 4-Pin SMD T/R | |
Mfr.#: TPD1E10B09QDPYRQ1 |
TVS DIODE 5.5V 14V 2X1SON | |
Mfr.#: TPS22810DBVR |
IC PWR SWITCH N-CHAN 1:1 6SOT23 | |
Mfr.#: TPS610994YFFR |
IC REG BOOST 3.3V 800MA 6DSBGA | |
Mfr.#: CLF10060NIT-3R3N-D OMO.#: OMO-CLF10060NIT-3R3N-D-TDK |
Inductor Power Shielded Wirewound 3.3uH 30% 100KHz Ferrite 8.1A 8.5mOhm DCR Automotive T/R |