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SIHB20N50E-GE3

SIHB20N50E-GE3
Mfr. #:
SIHB20N50E-GE3
Hersteller:
Vishay
Beschreibung:
IGBT Transistors MOSFET N-Channel 500V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHB20N50E-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIHB20N50E-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 500V 19A 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N CHANNEL, 500V, 19A, TO-263-3
***ark
Transistor Polarity:N Channel
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHB20N50E-GE3
DISTI # SIHB20N50E-GE3-ND		Vishay SiliconixMOSFET N-CH 500V 19A TO-263
RoHS: Compliant
Min Qty: 1
Container: Bulk		On Order
  • 1000:$1.8172
  • 500:$2.1547
  • 100:$2.6609
  • 10:$3.2450
  • 1:$3.6300
SIHB20N50E-GE3
DISTI # SIHB20N50E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 19A 3-Pin D2PAK (Alt: SIHB20N50E-GE3)
RoHS: Compliant
Min Qty: 1000		Asia - 0
    SIHB20N50E-GE3
    DISTI # SIHB20N50E-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 500V 19A 3-Pin D2PAK - Tape and Reel (Alt: SIHB20N50E-GE3)
    RoHS: Not Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 1000:$1.6900
    • 2000:$1.5900
    • 4000:$1.4900
    • 6000:$1.4900
    • 10000:$1.4900
    SIHB20N50E-GE3
    DISTI # 38Y8547    		Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 19A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V RoHS Compliant: Yes0
    • 1:$1.8700
    • 1000:$1.7700
    • 2000:$1.6600
    • 3000:$1.5600
    SIHB20N50E-GE3
    DISTI # 43Y2395    		Vishay IntertechnologiesMOSFET Transistor, N Channel, 19 A, 500 V, 0.16 ohm, 10 V, 4 V RoHS Compliant: Yes6928
    • 1:$3.3100
    • 10:$2.7400
    • 25:$2.5800
    • 50:$2.4200
    • 100:$2.2600
    • 250:$2.1900
    • 500:$1.9600
    SIHB20N50E-GE3
    DISTI # 78-SIHB20N50E-GE3    		Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant    		2736
    • 1:$3.3100
    • 10:$2.7400
    • 100:$2.2600
    • 250:$2.1900
    • 500:$1.9600
    • 1000:$1.6600
    • 2000:$1.5700
    SIHB20N50E-GE3
    DISTI # 2471939    		Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 19A, TO-263-3
    RoHS: Compliant    		6928
    • 1:£3.1600
    • 10:£2.6300
    • 100:£2.1600
    SIHB20N50E-GE3
    DISTI # 2471939    		Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 19A, TO-263-3
    RoHS: Compliant    		6928
    • 1:$5.2400
    • 10:$4.3400
    • 100:$3.5900
    SIHB20N50E-GE3
    DISTI # 2471939RL    		Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 19A, TO-263-3
    RoHS: Compliant    		0
    • 1:$5.2400
    • 10:$4.3400
    • 100:$3.5900
    SIHB20N50E-GE3Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant    		Americas -
      Bild Teil # Beschreibung
      SIHB20N50E-GE3

      Mfr.#: SIHB20N50E-GE3

      OMO.#: OMO-SIHB20N50E-GE3

      		 MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
      SIHB20N50E-GE3

      Mfr.#: SIHB20N50E-GE3

      OMO.#: OMO-SIHB20N50E-GE3-VISHAY

      		 IGBT Transistors MOSFET N-Channel 500V
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4500
      Menge eingeben:
      Der aktuelle Preis von SIHB20N50E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,24 $
      2,24 $
      10
      2,12 $
      21,23 $
      100
      2,01 $
      201,15 $
      500
      1,90 $
      949,90 $
      1000
      1,79 $
      1 788,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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