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DMN3730UFB4-7

DMN3730UFB4-7
Mfr. #:
DMN3730UFB4-7
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET 30V N-Ch VDSS 30V VGSS 8V VGS 4.5V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DMN3730UFB4-7 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
DMN3730UFB4-7 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
X2-DFN1006-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
730 mA
Rds On - Drain-Source-Widerstand:
460 mOhms
Vgs - Gate-Source-Spannung:
8 V
Qg - Gate-Ladung:
1.6 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
690 mW
Aufbau:
Single
Verpackung:
Spule
Produkt:
MOSFET Kleinsignal
Serie:
DMN37
Transistortyp:
1 N-Channel
Marke:
Eingebaute Dioden
Vorwärtstranskonduktanz - Min:
40 mS
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.000529 oz
Tags
DMN3730UFB4, DMN3730UF, DMN3730U, DMN3730, DMN37, DMN3, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 730 mOhm 1.6 nC 0.69 W Silicon SMT Mosfet - XFDFN-3
***p One Stop Japan
Trans MOSFET N-CH 30V 0.91A Automotive 3-Pin X2-DFN T/R
***ment14 APAC
MOSFET,N CH,30V,0.75A,DFN; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):460mohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:470mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:DFN1006H4; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:900mA; Power Dissipation Pd:470mW; Voltage Vgs Max:8V
30V & Asymmetric Enhancement Mode MOSFETs
Diodes Incorporated 30V & Asymmetric Dual N-Channel Enhancement Mode MOSFETs are designed to minimize on-state resistance (RDS(ON)) and conduction loss, and yet maintain superior switching performance. Diodes Incorporated 30V & Asymmetric Dual N-Channel Enhancement Mode MOSFETs are ideal for high efficiency power management applications such as load switches, portable applications, and power management functions. The DMN3730UFB/4 30V N-Channel MOSFETs feature a 0.6mm2 package footprint--10 times smaller than the SOT23--and low VGS(th), which allows them to be driven directly from a battery. The DMS301xSSD Asymmetric Dual N-Channel MOSFETs utilize a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver low VSD, which reduces losses due to body diode construction; low Qrr, which reduces body diode switching losses; and a low gate capacitance (Qg/Qgs) ratio, which reduces risk of shoot-through or cross conduction currents at high frequencies. All of these MOSFETs are considered to be "Green" devices, according to Diodes Incorporated's "Green" policy.
Teil # Mfg. Beschreibung Aktie Preis
DMN3730UFB4-7
DISTI # V72:2272_06698292		Zetex / Diodes IncTrans MOSFET N-CH 30V 0.91A Automotive 3-Pin X2-DFN T/R
RoHS: Compliant		2425
  • 1000:$0.1663
  • 500:$0.2153
  • 250:$0.2466
  • 100:$0.2740
  • 25:$0.3630
  • 10:$0.4033
  • 1:$0.4702
DMN3730UFB4-7
DISTI # V36:1790_06698292		Zetex / Diodes IncTrans MOSFET N-CH 30V 0.91A Automotive 3-Pin X2-DFN T/R
RoHS: Compliant		0
  • 3000:$0.1864
DMN3730UFB4-7B
DISTI # V36:1790_21883575		Zetex / Diodes IncTrans MOSFET N-CH 30V 0.91A Automotive 3-Pin X2-DFN T/R
RoHS: Compliant		0
  • 10000:$0.1008
DMN3730UFB4-7
DISTI # DMN3730UFB4-7CT-ND		Diodes IncorporatedMOSFET N-CH 30V 750MA DFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		66619In Stock
  • 1000:$0.1751
  • 500:$0.2266
  • 100:$0.2884
  • 10:$0.3860
  • 1:$0.4500
DMN3730UFB4-7
DISTI # DMN3730UFB4-7DKR-ND		Diodes IncorporatedMOSFET N-CH 30V 750MA DFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		66619In Stock
  • 1000:$0.1751
  • 500:$0.2266
  • 100:$0.2884
  • 10:$0.3860
  • 1:$0.4500
DMN3730UFB4-7
DISTI # DMN3730UFB4-7TR-ND		Diodes IncorporatedMOSFET N-CH 30V 750MA DFN
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		63000In Stock
  • 30000:$0.1330
  • 15000:$0.1350
  • 6000:$0.1450
  • 3000:$0.1550
DMN3730UFB4-7B
DISTI # DMN3730UFB4-7B-ND		Diodes IncorporatedMOSFET BVDSS: 25V-30V X1-DFN1006
RoHS: Compliant
Min Qty: 10000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 10000:$0.0533
DMN3730UFB4-7
DISTI # 26571936		Zetex / Diodes IncTrans MOSFET N-CH 30V 0.91A Automotive 3-Pin X2-DFN T/R
RoHS: Compliant		144000
  • 3000:$0.1250
DMN3730UFB4-7
DISTI # 30354007		Zetex / Diodes IncTrans MOSFET N-CH 30V 0.91A Automotive 3-Pin X2-DFN T/R
RoHS: Compliant		2425
  • 56:$0.4702
DMN3730UFB4-7
DISTI # DMN3730UFB4-7		Diodes IncorporatedTrans MOSFET N-CH 30V 0.91A 3-Pin DFN T/R - Tape and Reel (Alt: DMN3730UFB4-7)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.1019
  • 18000:$0.1039
  • 12000:$0.1089
  • 6000:$0.1139
  • 3000:$0.1199
DMN3730UFB4-7
DISTI # DMN3730UFB4-7		Diodes IncorporatedTrans MOSFET N-CH 30V 0.91A 3-Pin DFN T/R (Alt: DMN3730UFB4-7)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.1089
  • 18000:€0.1169
  • 12000:€0.1339
  • 6000:€0.1429
  • 3000:€0.1979
DMN3730UFB4-7
DISTI # DMN3730UFB4-7		Diodes IncorporatedTrans MOSFET N-CH 30V 0.91A 3-Pin DFN T/R (Alt: DMN3730UFB4-7)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
  • 150000:$0.1026
  • 75000:$0.1053
  • 30000:$0.1081
  • 15000:$0.1096
  • 9000:$0.1127
  • 6000:$0.1177
  • 3000:$0.1231
DMN3730UFB4-7B
DISTI # DMN3730UFB4-7B		Diodes IncorporatedTrans MOSFET N-CH 50V 0.9A 3-Pin X2-DFN1006 T/R - Tape and Reel (Alt: DMN3730UFB4-7B)
RoHS: Compliant
Min Qty: 10000
Container: Reel		Americas - 0
  • 100000:$0.0425
  • 60000:$0.0435
  • 40000:$0.0456
  • 20000:$0.0478
  • 10000:$0.0502
DMN3730UFB4-7
DISTI # 621-DMN3730UFB4-7		Diodes IncorporatedMOSFET 30V N-Ch VDSS 30V VGSS 8V VGS 4.5V
RoHS: Compliant		18224
  • 1:$0.5900
  • 10:$0.4960
  • 100:$0.3200
  • 1000:$0.2560
DMN3730UFB4-7B
DISTI # 621-DMN3730UFB4-7B		Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V9955
  • 1:$0.3700
  • 10:$0.2410
  • 100:$0.1030
  • 1000:$0.0790
  • 2500:$0.0600
  • 10000:$0.0540
  • 20000:$0.0500
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LT1616ES6#TRPBF

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2305018-2

Mfr.#: 2305018-2

OMO.#: OMO-2305018-2

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INA226AIDGSR

Mfr.#: INA226AIDGSR

OMO.#: OMO-INA226AIDGSR-TEXAS-INSTRUMENTS

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SZNZ9F6V2ST5G

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Verfügbarkeit
Aktie:
18
Auf Bestellung:
2001
Menge eingeben:
Der aktuelle Preis von DMN3730UFB4-7 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,59 $
0,59 $
10
0,50 $
4,96 $
100
0,32 $
32,00 $
1000
0,26 $
256,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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