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IXFN66N85X

IXFN66N85X
Mfr. #:
IXFN66N85X
Hersteller:
Littelfuse
Beschreibung:
MOSFET 850V Ultra Junction X-Class Pwr MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFN66N85X Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN66N85X DatasheetIXFN66N85X Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXFN66N85X Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Chassishalterung
Paket / Koffer:
SOT-227-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
850 V
Id - Kontinuierlicher Drainstrom:
65 A
Rds On - Drain-Source-Widerstand:
65 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
230 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
830 mW
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Transistortyp:
1 N-Channel
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
25 S
Abfallzeit:
20 ns
Produktart:
MOSFET
Anstiegszeit:
48 ns
Werkspackungsmenge:
10
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
105 ns
Typische Einschaltverzögerungszeit:
40 ns
Gewichtseinheit:
1.058219 oz
Tags
IXFN6, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 850V 65A 4-Pin SOT-227B
***ure Electronics
MOSFET 850V Ultra Junction X-Class Pwr MOSFET
***i-Key
MOSFET N-CH 850V 65A SOT227B
X-Class 850V - 1000V Power MOSFETs with HiPerFET™
IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
Teil # Mfg. Beschreibung Aktie Preis
IXFN66N85X
DISTI # IXFN66N85X-ND		IXYS Corporation850V/65A ULTRA JUNCTION X-CLASS
RoHS: Compliant
Min Qty: 1
Container: Tube		20In Stock
  • 100:$25.9120
  • 30:$27.8800
  • 10:$30.3400
  • 1:$32.8000
IXFN66N85X
DISTI # 747-IXFN66N85X		IXYS CorporationMOSFET 850V Ultra Junction X-Class Pwr MOSFET
RoHS: Compliant		0
  • 1:$32.8000
  • 5:$31.1600
  • 10:$30.3400
  • 25:$27.8800
  • 50:$26.6900
  • 100:$25.9100
  • 200:$23.7800
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Verfügbarkeit
Aktie:
30
Auf Bestellung:
2013
Menge eingeben:
Der aktuelle Preis von IXFN66N85X dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
32,80 $
32,80 $
5
31,16 $
155,80 $
10
30,34 $
303,40 $
25
27,88 $
697,00 $
50
26,69 $
1 334,50 $
100
25,91 $
2 591,00 $
200
23,78 $
4 756,00 $
500
22,63 $
11 315,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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