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STW21N150K5

STW21N150K5
Mfr. #:
STW21N150K5
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-channel 1500 V, 0.7 Ohm typ., 14 A MDmesh K5 Power MOSFET in TO-247 packge
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STW21N150K5 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STW21N150K5 Mehr Informationen STW21N150K5 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
1.5 kV
Id - Kontinuierlicher Drainstrom:
14 A
Rds On - Drain-Source-Widerstand:
900 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
89 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
446 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
MDmesh
Höhe:
5.15 mm
Länge:
20.15 mm
Produkt:
Leistungs-MOSFET
Serie:
STW21N150K5
Transistortyp:
1 N-Channel Power MOSFET
Typ:
MDmesh K5
Breite:
15.75 mm
Marke:
STMicroelectronics
Abfallzeit:
26 ns
Produktart:
MOSFET
Anstiegszeit:
14 ns
Werkspackungsmenge:
600
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
134 ns
Typische Einschaltverzögerungszeit:
34 ns
Gewichtseinheit:
1.340411 oz
Tags
STW21, STW2, STW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 1500 V, 0.7 Ohm typ., 14 A MDmesh K5 Power MOSFET in TO-247 packge
***ical
Trans MOSFET N-CH 1.5KV 14A 3-Pin(3+Tab) TO-247 Tube
***el Electronic
CAP NIOB OXIDE 100UF 20% 4V 2312
***ure Electronics
Single N-Channel 400 V 0.3 Ohms Flange Mount Power Mosfet - TO-247AC
*** Stop Electro
Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ment14 APAC
N CHANNEL MOSFET, 400V, 16A, TO-247; Tra; N CHANNEL MOSFET, 400V, 16A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:400V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; MSL:-
***nell
MOSFET, N, 400V, 16A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:400V; Current, Id Cont:16A; Resistance, Rds On:0.3ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:64A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:190W; Power, Pd:180W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.65°C/W; Transistors, No. of:1; Voltage, Vds Max:400V
***ure Electronics
Single N-Channel 600 V 0.4 Ohms Flange Mount Power Mosfet - TO-247AC
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ment14 APAC
N CHANNEL MOSFET, 600V, 16A, TO-247; Tra; N CHANNEL MOSFET, 600V, 16A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3
***nell
MOSFET, N, 600V, 16A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:16A; Resistance, Rds On:0.4ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:64A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:280W; Power, Pd:280W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.45°C/W; Transistors, No. of:1; Voltage, Vds:600V; Voltage, Vds Max:600V
***ure Electronics
Single N-Channel 600 V 0.4 Ohms Flange Mount Power Mosfet - TO-247
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N TO-247AC 600V 16A; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):400mohm; Power Dissipation Pd:280W; Transistor Case Style:TO-247AC; No. of Pins:3; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.45°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:280W; Power Dissipation Pd:280W; Pulse Current Idm:64A; Voltage Vds:600V
***icroelectronics
N-channel 1500 V, 1.6 Ohm typ., 7 A MDmesh K5 Power MOSFET in a TO-247 package
***ure Electronics
Single N-Channel 1500 V 1.9 Ohm 47 nC MDmesh™ K5 Power MOSFET - LFPAK-4
***ical
Trans MOSFET N-CH 1.5KV 7A 3-Pin(3+Tab) TO-247 Tube
***ark
Mosfet, N-Ch, 1.5Kv, 7A, 150Deg C, 250W Rohs Compliant: Yes
***el Electronic
16-bit Microcontrollers - MCU BL Auto Micro Processors
***icroelectronics
N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-247 package
***ure Electronics
Single N-Channel 600 V 0.2 Ohm 29 nC 150 W Silicon Flange Mount Mosfet TO-247-3
***ark
MOSFET, N-CH, 600V, 18A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 18A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET, N-CH, 600V, 18A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.175ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 150W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: FDmesh II Plus Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***icroelectronics
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
***ure Electronics
N-Channel 1200 V 520 mO 22 nC Silicon Carbide power Mosfet - HiP247
***ical
Trans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube
***nell
MOSFET, N-CH, 1.2KV, 12A, 150W, HIP247; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): 0.5ohm; Rds(on) Test Voltage Vgs: 20V; Threshold Voltage Vgs: 3.
***r Electronics
Power Field-Effect Transistor, 12A I(D), 1200V, 0.69ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
MDmesh K5 Power MOSFETs
STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best RDS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies and welding. The K5 series are available at 800V, 850V, 900V, 950V, 1050V, 1200V and 1500V.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
STMicroelectronics SuperMESH High Voltage MOSFETs - Thru-Hole
Teil # Mfg. Beschreibung Aktie Preis
STW21N150K5
DISTI # 497-16028-5-ND		STMicroelectronicsMOSFET N-CH 1500V 14A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		120In Stock
  • 120:$13.8020
  • 30:$14.9077
  • 1:$17.4800
STW21N150K5
DISTI # STW21N150K5		STMicroelectronicsTrans MOSFET N-CH 1500V 14A 3-Pin TO-247 Tube (Alt: STW21N150K5)
RoHS: Compliant
Min Qty: 600
Container: Tube		Asia - 0
    STW21N150K5
    DISTI # STW21N150K5    		STMicroelectronicsTrans MOSFET N-CH 1500V 14A 3-Pin TO-247 Tube - Rail/Tube (Alt: STW21N150K5)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Americas - 0
    • 600:$9.9900
    • 1200:$9.4900
    • 2400:$9.0900
    • 3600:$8.6900
    • 6000:$8.4900
    STW21N150K5
    DISTI # 511-STW21N150K5    		STMicroelectronicsMOSFET N-channel 1500 V, 0.7 Ohm typ., 14 A MDmesh K5 Power MOSFET in TO-247 packge
    RoHS: Compliant    		0
    • 1:$14.0700
    • 10:$12.9400
    • 25:$12.4000
    • 100:$10.9300
    • 250:$10.3900
    • 500:$9.7200
    STW21N150K5
    DISTI # TMOS2022    		STMicroelectronicsN-CH 1500V 14A 900mOhm TO247-3
    RoHS: Compliant    		Stock DE - 0Stock US - 0
    • 600:$10.1900
    Bild Teil # Beschreibung
    STRVS185X02B

    Mfr.#: STRVS185X02B

    OMO.#: OMO-STRVS185X02B

    		 TVS Diodes / ESD Suppressors Rep Volt Suppressor TVS 185V Ipp 2A
    STRVS280X02F

    Mfr.#: STRVS280X02F

    OMO.#: OMO-STRVS280X02F

    		 TVS Diodes / ESD Suppressors Rep Volt Suppressor TVS 280V Ipp 2A
    STRVS185X02B

    Mfr.#: STRVS185X02B

    OMO.#: OMO-STRVS185X02B-STMICROELECTRONICS

    		 TVS DIODE 128V 185V SMB
    STRVS280X02F

    Mfr.#: STRVS280X02F

    OMO.#: OMO-STRVS280X02F-STMICROELECTRONICS

    		 TVS Diodes - Transient Voltage Suppressors Rep Volt Suppressor TVS 280V Ipp 2A
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2500
    Menge eingeben:
    Der aktuelle Preis von STW21N150K5 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    14,07 $
    14,07 $
    10
    12,94 $
    129,40 $
    25
    12,40 $
    310,00 $
    100
    10,93 $
    1 093,00 $
    250
    10,39 $
    2 597,50 $
    500
    9,72 $
    4 860,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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