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SI4866DY-T1-E3

SI4866DY-T1-E3
Mfr. #:
SI4866DY-T1-E3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 12V 11A 8-SOIC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4866DY-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
SI4866D, SI4866, SI486, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 12 V 0.0055 Ohm Surface Mount Power Mosfet - SOIC-8
***et Europe
Trans MOSFET N-CH 12V 11A 8-Pin SOIC N T/R
***ied Electronics & Automation
MOSFET; N-Channel REDUCED QG; Fast Switching
***pNet
TRANS MOSFET N-CH 12V 11A 8SOIC N
***i-Key
MOSFET N-CH 12V 11A 8-SOIC
***ser
N-Channel MOSFETs 12 Volt 11 Amp 3.0W
***th Star Micro
Date Code:0615+;RoHS Compliant:Yes;
***
N-CH REDUCED QG, FAST SWITCH
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:17A; Drain Source Voltage, Vds:12V; On Resistance, Rds(on):0.0055ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:0.6V; Power Dissipation, Pd:1.6W ;RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
SI4866DY-T1-E3
DISTI # V36:1790_09215595		Vishay IntertechnologiesTrans MOSFET N-CH 12V 11A 8-Pin SOIC N T/R
RoHS: Compliant		0
  • 2500000:$0.9681
  • 1250000:$0.9687
  • 250000:$0.9850
  • 25000:$1.0040
  • 2500:$1.0060
SI4866DY-T1-E3
DISTI # V72:2272_09215595		Vishay IntertechnologiesTrans MOSFET N-CH 12V 11A 8-Pin SOIC N T/R
RoHS: Compliant		0
    SI4866DY-T1-E3
    DISTI # SI4866DY-T1-E3CT-ND    		Vishay SiliconixMOSFET N-CH 12V 11A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		2420In Stock
    • 1000:$1.1134
    • 500:$1.3438
    • 100:$1.6356
    • 10:$2.0350
    • 1:$2.2700
    SI4866DY-T1-E3
    DISTI # SI4866DY-T1-E3DKR-ND    		Vishay SiliconixMOSFET N-CH 12V 11A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		2420In Stock
    • 1000:$1.1134
    • 500:$1.3438
    • 100:$1.6356
    • 10:$2.0350
    • 1:$2.2700
    SI4866DY-T1-E3
    DISTI # SI4866DY-T1-E3TR-ND    		Vishay SiliconixMOSFET N-CH 12V 11A 8-SOIC
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 5000:$0.9691
    • 2500:$1.0064
    SI4866DY-T1-E3
    DISTI # SI4866DY-T1-E3    		Vishay IntertechnologiesTrans MOSFET N-CH 12V 11A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4866DY-T1-E3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$0.8829
    • 15000:$0.9069
    • 10000:$0.9329
    • 5000:$0.9729
    • 2500:$1.0019
    SI4866DY-T1-E3
    DISTI # SI4866DY-T1-E3    		Vishay IntertechnologiesTrans MOSFET N-CH 12V 11A 8-Pin SOIC N T/R (Alt: SI4866DY-T1-E3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 25000:€0.7499
    • 15000:€0.7929
    • 10000:€0.8929
    • 5000:€1.0829
    • 2500:€1.5459
    SI4866DY-T1-E3
    DISTI # 85W2150    		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:17A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.0045ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:600mV,Power Dissipation Pd:3W,No. of Pins:8Pins RoHS Compliant: Yes0
    • 500:$1.3200
    • 250:$1.5400
    • 100:$1.7600
    • 50:$1.9800
    • 25:$2.1900
    • 10:$2.3700
    • 1:$2.4900
    SI4866DY-T1-E3
    DISTI # 06J7931    		Vishay IntertechnologiesN CHANNEL MOSFET, 12V, 17A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:17A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.0055ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:600mV RoHS Compliant: Yes0
    • 10000:$0.8880
    • 6000:$0.9230
    • 4000:$0.9590
    • 2000:$1.0700
    • 1000:$1.1300
    • 1:$1.2000
    SI4866DY-T1-E3
    DISTI # 70026228    		Vishay SiliconixMOSFET,N-Channel REDUCED QG,Fast Switching
    RoHS: Compliant    		0
    • 2500:$1.2390
    • 5000:$1.2060
    • 7500:$1.0950
    SI4866DY-T1-E3
    DISTI # 781-SI4866DY-T1-E3    		Vishay IntertechnologiesMOSFET 12 Volt 11 Amp 3.0W
    RoHS: Compliant    		0
      SI4866DY-T1
      DISTI # 781-SI4866DY-T1      		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI4866BDY-T1-GE3
      RoHS: Not compliant      		0
        SI4866DY-T1-E3Vishay Intertechnologies 5104
          SI4866DY-T1-E3Vishay SiliconixTRANSISTOR,MOSFET,N-CHANNEL,12V V(BR)DSS,11A I(D),SO,LEAD FREE567
          • 318:$0.8750
          • 144:$0.9450
          • 1:$2.1000
          SI4866DY-T1-E3Vishay SiliconixTRANSISTOR,MOSFET,N-CHANNEL,12V V(BR)DSS,11A I(D),SO,LEAD FREE9
          • 3:$1.7500
          • 1:$2.1000
          SI4866DY-T1-E3Vishay IntertechnologiesMOSFET 12 Volt 11 Amp 3.0W
          RoHS: Compliant          		Americas -
            Bild Teil # Beschreibung
            SI4866DY-T1-GE3

            Mfr.#: SI4866DY-T1-GE3

            OMO.#: OMO-SI4866DY-T1-GE3

            		 MOSFET 12V 17A 3.0W 5.5mohm @ 4.5V
            SI4866DY-T1-E3

            Mfr.#: SI4866DY-T1-E3

            OMO.#: OMO-SI4866DY-T1-E3

            		 MOSFET 12 Volt 11 Amp 3.0W
            SI4866DY-T1-GE3

            Mfr.#: SI4866DY-T1-GE3

            OMO.#: OMO-SI4866DY-T1-GE3-VISHAY

            		 RF Bipolar Transistors MOSFET 12V 17A 3.0W 5.5mohm @ 4.5V
            SI4866DY-T1-E3-CUT TAPE

            Mfr.#: SI4866DY-T1-E3-CUT TAPE

            OMO.#: OMO-SI4866DY-T1-E3-CUT-TAPE-1190

            		 Neu und Original
            SI4866DY-T1

            Mfr.#: SI4866DY-T1

            OMO.#: OMO-SI4866DY-T1-1190

            		 MOSFET RECOMMENDED ALT 781-SI4866BDY-T1-GE3
            SI4866DY-T1-E3

            Mfr.#: SI4866DY-T1-E3

            OMO.#: OMO-SI4866DY-T1-E3-VISHAY

            		 MOSFET N-CH 12V 11A 8-SOIC
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            5500
            Menge eingeben:
            Der aktuelle Preis von SI4866DY-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
            Referenzpreis (USD)
            Menge
            Stückpreis
            ext. Preis
            1
            1,31 $
            1,31 $
            10
            1,25 $
            12,47 $
            100
            1,18 $
            118,13 $
            500
            1,12 $
            557,80 $
            1000
            1,05 $
            1 050,00 $
            Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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