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IPB65R150CFDATMA1

IPB65R150CFDATMA1
Mfr. #:
IPB65R150CFDATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 700V 72A D2PAK-2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB65R150CFDATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB65R150CFDATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
22.4 A
Rds On - Drain-Source-Widerstand:
135 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
86 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
195.3 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
CoolMOS CFDA
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Abfallzeit:
5.6 ns
Produktart:
MOSFET
Anstiegszeit:
7.6 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
52.8 ns
Typische Einschaltverzögerungszeit:
12.4 ns
Teil # Aliase:
IPB65R150CFD IPB65R15CFDXT SP000907034
Gewichtseinheit:
0.068654 oz
Tags
IPB65R150CFDAT, IPB65R150CFDA, IPB65R15, IPB65R1, IPB65, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 150 mOhm 86 nC CoolMOS™ Power Mosfet - D2PAK-3
***ical
Trans MOSFET N-CH 650V 22.4A 3-Pin(2+Tab) D2PAK T/R
***p One Stop Global
Trans MOSFET N-CH 650V 22.4A Automotive 3-Pin(2+Tab) TO-263 T/R
***et Europe
Trans MOSFET N-CH 700V 22.4A 3-Pin(2+Tab) TO-263
***et
Trans MOSFET N-CH 650V 22.4A 3-Pin TO-263 T/R
***ronik
N-CH 700V 22,4A 150mOhm TO263-3
***i-Key
HIGH POWER_LEGACY
***ark
Mosfet, N-Ch, 650V, 22.4A, To-263-3; Transistor Polarity:n Channel; Continuous Drain Current Id:22.4A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.135Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
MOSFET, N-CH, 650V, 22.4A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:22.4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:-; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFD2 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, N-CH, 650V, 22.4A, TO-263-3; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:22.4A; Napięcie drenu / źródła Vds:650V; Rezystancja przewodzenia Rds(on):0.135ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:4V; Straty mocy Pd:-; Rodzaj obudowy tranzystora:TO-263; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:CoolMOS CFD2 Series; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018)
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IPB65R150CFDATMA1
DISTI # IPB65R150CFDATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 650V 22.4A TO-263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 1000:$2.0393
IPB65R150CFDATMA1
DISTI # IPB65R150CFDATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 650V 22.4A TO-263
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 500:$2.4905
  • 100:$3.0757
  • 10:$3.7510
  • 1:$4.2000
IPB65R150CFDATMA1
DISTI # IPB65R150CFDATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 650V 22.4A TO-263
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 500:$2.4905
  • 100:$3.0757
  • 10:$3.7510
  • 1:$4.2000
IPB65R150CFDATMA1
DISTI # IPB65R150CFDATMA1		Infineon Technologies AGTrans MOSFET N-CH 700V 22.4A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB65R150CFDATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.8900
  • 2000:$1.7900
  • 4000:$1.6900
  • 6000:$1.6900
  • 10000:$1.5900
IPB65R150CFDATMA1
DISTI # SP000907034		Infineon Technologies AGTrans MOSFET N-CH 700V 22.4A 3-Pin(2+Tab) TO-263 (Alt: SP000907034)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 1000:€1.7900
  • 2000:€1.6900
  • 4000:€1.5900
  • 6000:€1.4900
  • 10000:€1.3900
IPB65R150CFDATMA1
DISTI # 13AC9033		Infineon Technologies AGMOSFET, N-CH, 650V, 22.4A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:22.4A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.135ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes0
  • 1:$3.5100
  • 10:$2.9800
  • 25:$2.8500
  • 50:$2.7200
  • 100:$2.5900
  • 250:$2.4500
  • 500:$2.2000
IPB65R150CFD
DISTI # 726-IPB65R150CFD		Infineon Technologies AGMOSFET N-Ch 700V 72A D2PAK-2
RoHS: Compliant		272
  • 1:$3.5100
  • 10:$2.9800
  • 100:$2.5900
  • 250:$2.4500
  • 500:$2.2000
  • 1000:$1.8600
IPB65R150CFDATMA1
DISTI # 726-IPB65R150CFDATMA		Infineon Technologies AGMOSFET N-Ch 700V 72A D2PAK-2
RoHS: Compliant		0
  • 1:$3.5100
  • 10:$2.9800
  • 100:$2.5900
  • 250:$2.4500
  • 500:$2.2000
  • 1000:$1.8600
IPB65R150CFDATMA1
DISTI # 2726047		Infineon Technologies AGMOSFET, N-CH, 650V, 22.4A, TO-263-3
RoHS: Compliant		0
  • 1:£3.0400
  • 10:£2.2900
  • 100:£1.9900
  • 250:£1.8900
  • 500:£1.7000
IPB65R150CFDATMA1
DISTI # 2726047		Infineon Technologies AGMOSFET, N-CH, 650V, 22.4A, TO-263-3
RoHS: Compliant		0
  • 1:$6.7000
  • 10:$5.9800
  • 100:$4.9100
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Verfügbarkeit
Aktie:
982
Auf Bestellung:
2965
Menge eingeben:
Der aktuelle Preis von IPB65R150CFDATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,50 $
3,50 $
10
2,98 $
29,80 $
100
2,58 $
258,00 $
250
2,45 $
612,50 $
500
2,19 $
1 095,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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