IRF7910TRPBF

IRF7910TRPBF
Mfr. #:
IRF7910TRPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MOSFT DUAL NCh 12V 10A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF7910TRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7910TRPBF DatasheetIRF7910TRPBF Datasheet (P4-P6)IRF7910TRPBF Datasheet (P7-P8)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
12 V
Id - Kontinuierlicher Drainstrom:
10 A
Rds On - Drain-Source-Widerstand:
15 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Qg - Gate-Ladung:
26 nC
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2 W
Aufbau:
Dual
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Transistortyp:
2 N-Channel
Breite:
3.9 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
18 S
Abfallzeit:
6.3 ns
Produktart:
MOSFET
Anstiegszeit:
22 ns
Werkspackungsmenge:
4000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001565662
Gewichtseinheit:
0.017870 oz
Tags
IRF791, IRF79, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, Power;Dual N-Ch;VDSS 12V;RDS(ON) 11.5 Milliohms;ID 10A;SO-8;PD 2W;-55deg
***ure Electronics
Single N-Channel 12 V 15 mOhm 17 nC HEXFET® Power Mosfet - SOIC-8
***et Europe
Transistor MOSFET Array Dual N-CH 12V 10A 8-Pin SOIC T/R
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:12V; Continuous Drain Current, Id:10A; On Resistance, Rds(on):15mohm; Rds(on) Test Voltage, Vgs:4.5V; Leaded Process Compatible:Yes RoHS Compliant: Yes
***(Formerly Allied Electronics)
MOSFET, Power;P-Ch;VDSS -14V;RDS(ON) 0.0082Ohm;ID +/-11A;SO-8;PD 2.5W;VGS +/-12V
***et
Trans MOSFET P-CH 14V 11A 8-Pin SOIC T/R
***ment14 APAC
P CHANNEL MOSFET, -14V, 11A, SOIC; Trans; P CHANNEL MOSFET, -14V, 11A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-11A; Drain Source Voltage Vds:-14V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:-2.5V; Threshold Voltage Vgs Typ:-600mV
***ark
Mosfet Transistor, P Channel, 11.5 A, 12 V, 14 Mohm, -4.5 V, -900 Mv Rohs Compliant: Yes
*** Source Electronics
Trans MOSFET P-CH Si 20V 11.5A 8-Pin SOIC T/R / MOSFET P-CH 12V 11.5A 8-SOIC
***ure Electronics
Single P-Channel 12 V 14 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Industry-Standard Pinout; P-Channel MOSFET
***(Formerly Allied Electronics)
Power MOSFET,P-Ch,VDSS -12V,RDS(ON) 14 Milliohms,ID -11.5A,SO-8,PD 2.5W,VGS+/-8V
***ineon SCT
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***nell
MOSFET, P, SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: 11.5A; Drain Source Voltage Vds: -12V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -900mV; Power Dissip
***ark
Mosfet Transistor, N Channel, 13 A, 30 V, 11 Mohm, 4.5 V, 3 V
***(Formerly Allied Electronics)
MOSFET; Power; N-Ch; VDSS 30V; RDS(ON) 9.2Milliohms; ID 13A; SO-8; PD 2.5W; VGS +/-12V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses
***ical
Trans MOSFET N-CH 30V 13A 8-Pin SOIC Tube
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 3V; Power Dissipa
***ical
Trans MOSFET N-CH 30V 8A Automotive 8-Pin SO T/R
***S
French Electronic Distributor since 1988
***et Europe
Trans MOSFET N-CH 30V 10.4A 8-Pin SO T/R
***i-Key
MOSFET N-CH 30V 10.4A 8SO
***ment14 APAC
MOSFET,+SCH,N CH,30V,11A,SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:10.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.55W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.4A; Power Dissipation Pd:1.55W; Voltage Vgs Max:12V
***ure Electronics
Single N-Channel 30 V 2 W 12.5 nC Silicon Surface Mount Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 10.3A Automotive 8-Pin SO T/R
***(Formerly Allied Electronics)
MOSFET; N Channel; MOS; Trans; 30V; 10.3A; SO8
***S
French Electronic Distributor since 1988
Teil # Mfg. Beschreibung Aktie Preis
IRF7910TRPBF
DISTI # IRF7910TRPBFCT-ND
Infineon Technologies AGMOSFET 2N-CH 12V 10A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1530In Stock
  • 1000:$0.6586
  • 500:$0.8342
  • 100:$1.0757
  • 10:$1.3610
  • 1:$1.5400
IRF7910TRPBF
DISTI # IRF7910TRPBFDKR-ND
Infineon Technologies AGMOSFET 2N-CH 12V 10A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1530In Stock
  • 1000:$0.6586
  • 500:$0.8342
  • 100:$1.0757
  • 10:$1.3610
  • 1:$1.5400
IRF7910TRPBF
DISTI # IRF7910TRPBFTR-ND
Infineon Technologies AGMOSFET 2N-CH 12V 10A 8SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 4000:$0.5968
IRF7910TRPBF
DISTI # IRF7910TRPBF
Infineon Technologies AGTrans MOSFET N-CH 12V 10A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7910TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel
Americas - 0
  • 4000:$0.4459
  • 8000:$0.4299
  • 16000:$0.4139
  • 24000:$0.4009
  • 40000:$0.3929
IRF7910TRPBF
DISTI # IRF7910TRPBF
Infineon Technologies AGTrans MOSFET N-CH 12V 10A 8-Pin SOIC T/R (Alt: IRF7910TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel
Asia - 0
    IRF7910TRPBF
    DISTI # 13AC9212
    Infineon Technologies AGMOSFET, DUAL N CH, 12V, 10A, SOIC-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:10A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.0115ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:2V,Power RoHS Compliant: Yes2376
    • 1:$1.2800
    • 10:$1.0900
    • 25:$1.0000
    • 50:$0.9190
    • 100:$0.8340
    • 250:$0.7860
    • 500:$0.7370
    • 1000:$0.5820
    IRF7910TRPBF
    DISTI # 70017727
    Infineon Technologies AGMOSFET,Power,Dual N-Ch,VDSS 12V,RDS(ON) 11.5 Milliohms,ID 10A,SO-8,PD 2W,-55deg
    RoHS: Compliant
    0
    • 4000:$1.4200
    IRF7910TRPBF
    DISTI # 942-IRF7910TRPBF
    Infineon Technologies AGMOSFET MOSFT DUAL NCh 12V 10A
    RoHS: Compliant
    3514
    • 1:$1.2800
    • 10:$1.0900
    • 100:$0.8340
    • 500:$0.7370
    • 1000:$0.5820
    IRF7910TRPBFInfineon Technologies AGSingle N-Channel 12 V 15 mOhm 17 nC HEXFET Power Mosfet - SOIC-8
    RoHS: Compliant
    4000Reel
    • 4000:$0.4750
    IRF7910TRPBF
    DISTI # 9154967P
    Infineon Technologies AGMOSFET DUAL N-CHANNEL HEXFET 12V 10A SO8, RL2680
    • 50:£0.2480
    IRF7910TRPBF
    DISTI # 2725921
    Infineon Technologies AGMOSFET, DUAL N CH, 12V, 10A, SOIC-8
    RoHS: Compliant
    2376
    • 1:$2.4600
    • 10:$2.1700
    • 100:$1.7200
    • 500:$1.3300
    • 1000:$1.0500
    IRF7910TRPBF
    DISTI # 2725921
    Infineon Technologies AGMOSFET, DUAL N CH, 12V, 10A, SOIC-8
    RoHS: Compliant
    3516
    • 5:£0.8530
    • 25:£0.8330
    • 100:£0.6100
    • 250:£0.5870
    • 500:£0.5630
    Bild Teil # Beschreibung
    ADCMP600BRJZ-REEL7

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    BD6211F-E2

    Mfr.#: BD6211F-E2

    OMO.#: OMO-BD6211F-E2

    Motor / Motion / Ignition Controllers & Drivers H-BRIDGE 7V max 1 Chan 1.0A 1.0ohm
    TPS51200DRCR

    Mfr.#: TPS51200DRCR

    OMO.#: OMO-TPS51200DRCR

    Power Management Specialized - PMIC Sink/Source DDR Term Reg
    TPS3808G09DBVR

    Mfr.#: TPS3808G09DBVR

    OMO.#: OMO-TPS3808G09DBVR

    Supervisory Circuits Programmable-Delay Supervisory
    TLV431AIDBVR

    Mfr.#: TLV431AIDBVR

    OMO.#: OMO-TLV431AIDBVR

    Voltage References Lw V Adj Shunt
    TPS40041DRBR

    Mfr.#: TPS40041DRBR

    OMO.#: OMO-TPS40041DRBR

    Switching Controllers Low Vin Synch Buck DC/DC Controller
    LM536003QDSXTQ1

    Mfr.#: LM536003QDSXTQ1

    OMO.#: OMO-LM536003QDSXTQ1

    Switching Voltage Regulators 3.5V to 36V 650mA Sync 2.1MHz
    2450BM15A0015E

    Mfr.#: 2450BM15A0015E

    OMO.#: OMO-2450BM15A0015E

    Signal Conditioning 2.45GHz BALUN/FILTER
    ADCMP600BRJZ-REEL7

    Mfr.#: ADCMP600BRJZ-REEL7

    OMO.#: OMO-ADCMP600BRJZ-REEL7-ANALOG-DEVICES-INC-ADI

    Analog Comparators RR Fast 2.5-5.5V SGL-Supply TTL/CMOS
    2450BM15A0015E

    Mfr.#: 2450BM15A0015E

    OMO.#: OMO-2450BM15A0015E-JOHANSON-TECHNOLOGY

    Signal Conditioning 2.45GHz BALUN/FILTER
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1987
    Menge eingeben:
    Der aktuelle Preis von IRF7910TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,27 $
    1,27 $
    10
    1,08 $
    10,80 $
    100
    0,83 $
    83,40 $
    500
    0,74 $
    368,50 $
    1000
    0,58 $
    582,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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