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STB27NM60ND

STB27NM60ND
Mfr. #:
STB27NM60ND
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-Ch Power Mosfet 600V STripFET D2PAK
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STB27NM60ND Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STB27NM60ND Mehr Informationen STB27NM60ND Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
21 A
Rds On - Drain-Source-Widerstand:
130 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
25 V
Qg - Gate-Ladung:
80 nC
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
160 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Verpackung:
Spule
Serie:
STB27NM60ND
Transistortyp:
1 N-Channel
Marke:
STMicroelectronics
Vorwärtstranskonduktanz - Min:
17 S
Abfallzeit:
40 ns
Produktart:
MOSFET
Anstiegszeit:
30 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
50 ns
Typische Einschaltverzögerungszeit:
60 ns
Gewichtseinheit:
0.139332 oz
Tags
STB27, STB2, STB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 0.13 Ohm, 21 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK
***ical
Trans MOSFET N-CH 600V 21A Automotive 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 21A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
N-Channel 600 V 160 mOhm Surface Mount FDmesh™ II Power Mosfet - D2PAK
***nell
MOSFET, AEC-Q101, 21A, 600V, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 160W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: FDmesh II Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
N-Channel FDmesh Power MOSFETs
STMicroelectronics N-Channel FDmesh™ Power MOSFETs are a power MOSFET which belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to STMicroelectronic's strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. These MOSFETs feature fast recovery, low input capacitance and gate charge, low gate input resistance, and extremely high dv/dt and avalanche capabilities.
Teil # Mfg. Beschreibung Aktie Preis
STB27NM60ND
DISTI # V72:2272_18458563		STMicroelectronicsTrans MOSFET N-CH 600V 21A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		950
  • 75000:$3.6850
  • 30000:$3.7230
  • 15000:$3.7610
  • 6000:$3.8000
  • 3000:$3.8380
  • 1000:$3.8780
  • 500:$4.1370
  • 250:$4.5180
  • 100:$4.7230
  • 50:$5.1830
  • 25:$5.3810
  • 10:$5.6480
  • 1:$6.1720
STB27NM60ND
DISTI # 497-17760-1-ND		STMicroelectronicsMOSFET N-CH 600V 21A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		88In Stock
  • 10:$8.2350
  • 1:$9.0900
STB27NM60ND
DISTI # 497-17760-6-ND		STMicroelectronicsMOSFET N-CH 600V 21A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		88In Stock
  • 10:$8.2350
  • 1:$9.0900
STB27NM60ND
DISTI # 497-17760-2-ND		STMicroelectronicsMOSFET N-CH 600V 21A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    STB27NM60ND
    DISTI # 26746202    		STMicroelectronicsTrans MOSFET N-CH 600V 21A Automotive 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		950
    • 500:$4.3490
    • 250:$4.7150
    • 100:$4.8860
    • 50:$5.4560
    • 25:$5.4730
    • 10:$5.6980
    • 2:$6.1780
    STB27NM60ND
    DISTI # STB27NM60ND    		STMicroelectronicsTrans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB27NM60ND)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 100
      STB27NM60ND
      DISTI # STB27NM60ND      		STMicroelectronicsTrans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK T/R (Alt: STB27NM60ND)
      RoHS: Compliant
      Min Qty: 1
      Container: Tape and Reel      		Europe - 0
      • 1:€3.6900
      • 10:€3.5900
      • 25:€3.3900
      • 50:€3.3900
      • 100:€3.2900
      • 500:€3.2900
      • 1000:€3.1900
      STB27NM60ND
      DISTI # 52AC7487      		STMicroelectronicsMOSFET, AEC-Q101, 21A, 600V, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.13ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes83
      • 1:$7.1400
      • 10:$6.4600
      • 25:$6.1600
      • 50:$5.7500
      • 100:$5.3400
      • 250:$5.1100
      • 500:$4.6500
      STB27NM60ND
      DISTI # 511-STB27NM60ND      		STMicroelectronicsMOSFET N-Ch Power Mosfet 600V STripFET D2PAK
      RoHS: Compliant      		97
      • 1:$7.1400
      • 10:$6.4600
      • 25:$6.1600
      STB27NM60ND
      DISTI # 2851958      		STMicroelectronicsMOSFET, AEC-Q101, 21A, 600V, TO-263-3
      RoHS: Compliant      		83
      • 1:$13.4600
      • 10:$12.1100
      STB27NM60ND
      DISTI # C1S730201114982      		STMicroelectronicsMOSFETs
      RoHS: Compliant      		950
      • 100:$4.8860
      • 50:$5.4560
      • 25:$5.4730
      • 10:$5.6980
      • 1:$6.1780
      STB27NM60ND
      DISTI # 2851958      		STMicroelectronicsMOSFET, AEC-Q101, 21A, 600V, TO-263-3
      RoHS: Compliant      		85
      • 1:£5.9200
      • 10:£4.6600
      • 100:£4.0400
      • 250:£3.8600
      • 500:£3.5200
      Bild Teil # Beschreibung
      SK56L-TP

      Mfr.#: SK56L-TP

      OMO.#: OMO-SK56L-TP

      		 Schottky Diodes & Rectifiers DIODE SCHOTTKY 60V 5A DO214AB
      UCC5390ECDWVR

      Mfr.#: UCC5390ECDWVR

      OMO.#: OMO-UCC5390ECDWVR

      		 Gate Drivers 10A /10A 5KVRMS ISOGATE DR- BIPOLAR
      MGJ2D122005SC

      Mfr.#: MGJ2D122005SC

      OMO.#: OMO-MGJ2D122005SC-MURATA-POWER-SOLUTIONS

      		 Isolated DC/DC Converters 2W 12Vin 20/-5Vout 80/40mA SIP
      UCC5390ECDWVR

      Mfr.#: UCC5390ECDWVR

      OMO.#: OMO-UCC5390ECDWVR-TEXAS-INSTRUMENTS

      		 DGTL ISO 3KV 1CH GATE DRVR 8SOIC
      SK56L-TP

      Mfr.#: SK56L-TP

      OMO.#: OMO-SK56L-TP-MICRO-COMMERCIAL-COMPONENTS

      		 Schottky Diodes & Rectifiers DIODE SCHOTTKY 60V 5A DO214AB
      Verfügbarkeit
      Aktie:
      95
      Auf Bestellung:
      2078
      Menge eingeben:
      Der aktuelle Preis von STB27NM60ND dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      7,13 $
      7,13 $
      10
      6,45 $
      64,50 $
      25
      6,15 $
      153,75 $
      100
      5,34 $
      534,00 $
      250
      5,10 $
      1 275,00 $
      500
      4,65 $
      2 325,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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