OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

IPG20N06S2L50AATMA1

IPG20N06S2L50AATMA1
Mfr. #:
IPG20N06S2L50AATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 55V 20A TDSON-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPG20N06S2L50AATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPG20N06S2L50AATMA1 DatasheetIPG20N06S2L50AATMA1 Datasheet (P4-P6)IPG20N06S2L50AATMA1 Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TDSON-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
55 V
Id - Kontinuierlicher Drainstrom:
20 A
Rds On - Drain-Source-Widerstand:
50 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.6 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
13 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
51 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.27 mm
Länge:
5.9 mm
Transistortyp:
2 N-Channel
Breite:
5.15 mm
Marke:
Infineon-Technologien
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
3 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
15 ns
Typische Einschaltverzögerungszeit:
2 ns
Teil # Aliase:
IPG20N06S2L-50A SP001023842
Tags
IPG20N06S2, IPG20N06, IPG20N0, IPG20, IPG2, IPG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
55V, Dual N-Ch, 50 mΩ max, Automotive MOSFET, dual SS08 (5x6), OptiMOS™, PG-TDSON-8, RoHS
***ical
Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R
***i-Key Marketplace
IPG20N06 - 55V-60V N-CHANNEL AUT
***ineon
Summary of Features: Dual N-channel Logic Level - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested; Feasible for automatic optical inspection (AOI) | Benefits: Dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction.; Bond wire is 200um for up to 20A current; Larger source lead frame connection for wire bonding; Package: PG-TDSON-8-4; Same thermal and electrical performance as a DPAK with the same die size.; Exposed pad provides excellent thermal transfer (varies by die size); Two N-Channel MOSFETs in one package with 2 isolated leadframes | Target Applications: Direct Fuel Injection; ABS Valves; Solenoid control; Load Switches; LED and Body lighting
***(Formerly Allied Electronics)
IRLR3105TRPBF N-channel MOSFET Transistor, 25 A, 55 V, 3-Pin DPAK
***ure Electronics
Single N-Channel 55 V 37 mOhm 13.3 nC HEXFET® Power Mosfet - DPAK
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 25A I(D), 55V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***ark
N Channel Mosfet, 55V, 25A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:25A; On Resistance Rds(On):0.037Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 25 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 37 / Gate-Source Voltage V = 16 / Fall Time ns = 37 / Rise Time ns = 57 / Turn-OFF Delay Time ns = 25 / Turn-ON Delay Time ns = 8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 57
***ernational Rectifier
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package
*** Stop Electro
Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N-CH, 55V, 25A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:57W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252AA; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon SCT
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on resistance per silicon area, DPAK-3, RoHS
***ineon
Benefits: Advanced Planar Technology; Logic-Level Gate Drive; Dynamic dv/dt Rating; Low On-Resistance; 175C Operating Temperature; Fast Switching; Fully Avalanche Rated; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
***emi
N-Channel UltraFET Power MOSFET 55V, 20A, 36mΩ
***ure Electronics
N-Channel 55 V 0.036 Ohm UltraFET Power Mosfet - TO-252AA
***r Electronics
Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75321.
***emi
N-Channel UltraFET® Power MOSFET 55V, 20A, 36mΩ
***Yang
Trans MOSFET N-CH 55V 20A 3-Pin(2+Tab) DPAK T/R - Tape and Reel
***r Electronics
Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***inecomponents.com
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs
***Yang
TRANS MOSFET N-CH 55V 20A 3PIN TO-252AA - Bulk
***S
French Electronic Distributor since 1988
***el Electronic
IC AMP AB STEREO 80MW VCSP50L2
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:20A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
IPG20N06S2L50AATMA1
DISTI # IPG20N06S2L50AATMA1-ND		Infineon Technologies AGMOSFET 2N-CH 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.6169
IPG20N06S2L50AATMA1
DISTI # IPG20N06S2L50AATMA1		Infineon Technologies AGTrans MOSFET N-CH 55V 20A 8-Pin TDSON T/R - Tape and Reel (Alt: IPG20N06S2L50AATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.6069
  • 10000:$0.5849
  • 20000:$0.5639
  • 30000:$0.5449
  • 50000:$0.5349
IPG20N06S2L50AATMA1
DISTI # SP001023842		Infineon Technologies AGTrans MOSFET N-CH 55V 20A 8-Pin TDSON T/R (Alt: SP001023842)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€0.9489
  • 10000:€0.7959
  • 20000:€0.6649
  • 30000:€0.5789
  • 50000:€0.5429
IPG20N06S2L50AATMA1
DISTI # 726-IPG20N06S2L50AAT		Infineon Technologies AGMOSFET N-Ch 55V 20A TDSON-8
RoHS: Compliant		0
  • 1:$1.3800
  • 10:$1.1800
  • 100:$0.9070
  • 500:$0.8020
  • 1000:$0.6330
  • 5000:$0.5610
  • 10000:$0.5400
Bild Teil # Beschreibung
IPG20N06S2L-35

Mfr.#: IPG20N06S2L-35

OMO.#: OMO-IPG20N06S2L-35

 MOSFET N-Ch 55V 20A TDSON-8 OptiMOS
IPG20N06S4L-26

Mfr.#: IPG20N06S4L-26

OMO.#: OMO-IPG20N06S4L-26

 MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2
IPG20N06S4L11ATMA1

Mfr.#: IPG20N06S4L11ATMA1

OMO.#: OMO-IPG20N06S4L11ATMA1

 MOSFET N-CHANNEL_55/60V
IPG20N06S4L14ATMA2

Mfr.#: IPG20N06S4L14ATMA2

OMO.#: OMO-IPG20N06S4L14ATMA2-INFINEON-TECHNOLOGIES

 MOSFET 2N-CH 8TDSON
IPG20N06S2L35ATMA1

Mfr.#: IPG20N06S2L35ATMA1

OMO.#: OMO-IPG20N06S2L35ATMA1-INFINEON-TECHNOLOGIES

 MOSFET 2N-CH 55V 20A TDSON-8-4
IPG20N06S415ATMA1

Mfr.#: IPG20N06S415ATMA1

OMO.#: OMO-IPG20N06S415ATMA1-INFINEON-TECHNOLOGIES

 MOSFET 2N-CH 8TDSON
IPG20N06S4L-11A

Mfr.#: IPG20N06S4L-11A

OMO.#: OMO-IPG20N06S4L-11A-1190

 Neu und Original
IPG20N06S4L-26A

Mfr.#: IPG20N06S4L-26A

OMO.#: OMO-IPG20N06S4L-26A-1190

 MOSFET N-Ch 55V 20A TDSON-8
IPG20N06S4L-11

Mfr.#: IPG20N06S4L-11

OMO.#: OMO-IPG20N06S4L-11-317

 RF Bipolar Transistors MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2
IPG20N06S4L26AATMA1

Mfr.#: IPG20N06S4L26AATMA1

OMO.#: OMO-IPG20N06S4L26AATMA1-INFINEON-TECHNOLOGIES

 RF Bipolar Transistors MOSFET N-Ch 55V 20A TDSON-8
Verfügbarkeit
Aktie:
250
Auf Bestellung:
2233
Menge eingeben:
Der aktuelle Preis von IPG20N06S2L50AATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,38 $
1,38 $
10
1,18 $
11,80 $
100
0,91 $
90,70 $
500
0,80 $
401,00 $
1000
0,63 $
633,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
More Newest Products
Top