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BSC082N10LS G

BSC082N10LS G
Mfr. #:
BSC082N10LS G
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC082N10LS G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BSC082N10LS G Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
13.8 A
Rds On - Drain-Source-Widerstand:
8.2 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
156 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.27 mm
Länge:
5.9 mm
Serie:
OptiMOS 2
Transistortyp:
1 N-Channel
Breite:
5.15 mm
Marke:
Infineon-Technologien
Abfallzeit:
12 ns
Produktart:
MOSFET
Anstiegszeit:
24 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
53 ns
Typische Einschaltverzögerungszeit:
19 ns
Teil # Aliase:
BSC082N10LSGATMA1 BSC82N1LSGXT SP000379609
Gewichtseinheit:
0.007055 oz
Tags
BSC082N10LSG, BSC082N1, BSC082, BSC08, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Teil # Mfg. Beschreibung Aktie Preis
BSC082N10LSGATMA1
DISTI # V72:2272_06378306		Infineon Technologies AGTrans MOSFET N-CH 100V 13.8A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		4089
  • 3000:$1.1631
  • 1000:$1.1752
  • 500:$1.3789
  • 250:$1.5429
  • 100:$1.7029
  • 25:$1.9283
  • 10:$2.0472
  • 1:$2.2250
BSC082N10LSGATMA1
DISTI # BSC082N10LSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 100A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		19522In Stock
  • 1000:$1.3554
  • 500:$1.6358
  • 100:$2.1031
  • 10:$2.6170
  • 1:$2.9000
BSC082N10LSGATMA1
DISTI # BSC082N10LSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 100A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		19522In Stock
  • 1000:$1.3554
  • 500:$1.6358
  • 100:$2.1031
  • 10:$2.6170
  • 1:$2.9000
BSC082N10LSGATMA1
DISTI # BSC082N10LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		15000In Stock
  • 5000:$1.1798
BSC082N10LSGATMA1
DISTI # 31029300		Infineon Technologies AGTrans MOSFET N-CH 100V 13.8A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		4089
  • 3000:$1.1631
  • 1000:$1.1752
  • 500:$1.3789
  • 250:$1.5429
  • 100:$1.7029
  • 25:$1.9283
  • 10:$2.0472
  • 7:$2.2250
BSC082N10LS G
DISTI # 30608124		Infineon Technologies AGTrans MOSFET N-CH 100V 13.8A 8-Pin TDSON EP
RoHS: Compliant		887
  • 23:$0.9945
BSC082N10LSG
DISTI # BSC082N10LS G		Infineon Technologies AGTrans MOSFET N-CH 100V 13.8A 8-Pin TDSON T/R (Alt: BSC082N10LS G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
  • 5000:$0.9757
  • 10000:$0.9486
  • 15000:$0.9230
  • 25000:$0.8987
  • 50000:$0.8870
  • 125000:$0.8756
  • 250000:$0.8646
BSC082N10LSGATMA1
DISTI # BSC082N10LSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 13.8A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC082N10LSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.9509
  • 10000:$0.9159
  • 20000:$0.8829
  • 30000:$0.8529
  • 50000:$0.8379
BSC082N10LSGATMA1
DISTI # 50Y1806		Infineon Technologies AGMOSFET Transistor, N Channel, 100 A, 100 V, 0.0068 ohm, 10 V, 1.85 V RoHS Compliant: Yes447
  • 1:$2.9000
  • 10:$2.6200
  • 25:$2.4500
  • 50:$2.2700
  • 100:$2.1000
  • 250:$1.8700
  • 500:$1.6400
  • 1000:$1.3600
BSC082N10LS G
DISTI # 726-BSC082N10LSG		Infineon Technologies AGMOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2
RoHS: Compliant		8748
  • 1:$2.4300
  • 10:$2.0700
  • 100:$1.6500
  • 500:$1.4500
  • 1000:$1.2000
  • 2500:$1.1200
  • 5000:$1.0800
BSC082N10LSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 13.8A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		600
  • 1000:$1.0400
  • 500:$1.0900
  • 100:$1.1400
  • 25:$1.1900
  • 1:$1.2800
BSC082N10LSGATMA1
DISTI # 9064312P		Infineon Technologies AGMOSFET N-CH 100V 13.8A OPTIMOS TDSON8, RL135
  • 25:£1.4720
  • 125:£1.1480
  • 250:£1.1220
  • 625:£1.0480
BSC082N10LSGInfineon Technologies AG 2107
    BSC082N10LSGATMA1
    DISTI # 2480741RL    		Infineon Technologies AGMOSFET, N-CH, 100V, 100A, TDSON-8
    RoHS: Compliant    		0
    • 1:$3.8500
    • 10:$3.2800
    • 100:$2.6200
    • 500:$2.3000
    • 1000:$1.9100
    • 2500:$1.7800
    • 5000:$1.7800
    BSC082N10LSGATMA1
    DISTI # 2480741    		Infineon Technologies AGMOSFET, N-CH, 100V, 100A, TDSON-8
    RoHS: Compliant    		1067
    • 1:$3.8500
    • 10:$3.2800
    • 100:$2.6200
    • 500:$2.3000
    • 1000:$1.9100
    • 2500:$1.7800
    • 5000:$1.7800
    BSC082N10LS G
    DISTI # C1S322000087169    		Infineon Technologies AGTrans MOSFET N-CH 100V 13.8A Automotive 8-Pin TDSON EP T/R
    RoHS: Compliant    		887
    • 10:$0.7800
    • 5:$0.8750
    BSC082N10LSGATMA1
    DISTI # C1S322000595905    		Infineon Technologies AGMOSFETs
    RoHS: Compliant    		4089
    • 250:$1.5429
    • 100:$1.7029
    • 25:$1.9283
    • 10:$2.0472
    BSC082N10LSGATMA1
    DISTI # C1S322000232680    		Infineon Technologies AGTrans MOSFET N-CH 100V 13.8A Automotive 8-Pin TDSON EP T/R
    RoHS: Compliant    		5000
    • 5000:$0.9990
    BSC082N10LSGATMA1
    DISTI # 2480741    		Infineon Technologies AGMOSFET, N-CH, 100V, 100A, TDSON-8
    RoHS: Compliant    		507
    • 1:£1.9200
    • 10:£1.5000
    • 100:£1.1700
    • 250:£1.1400
    • 500:£1.0700
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1988
    Menge eingeben:
    Der aktuelle Preis von BSC082N10LS G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,42 $
    2,42 $
    10
    2,06 $
    20,60 $
    100
    1,65 $
    165,00 $
    500
    1,44 $
    720,00 $
    1000
    1,19 $
    1 190,00 $
    2500
    1,11 $
    2 775,00 $
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