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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SI2309DS-T1-GE3 DISTI # 15R4907 | Vishay Intertechnologies | P CH MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-1.25A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):275mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs Typ:-1V,Power Dissipation Pd:1.25W RoHS Compliant: Yes | 0 | |
| SI2309DS-T1-GE3 DISTI # 84R8025 | Vishay Intertechnologies | P CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-1.25A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.275ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:1.25W RoHS Compliant: Yes | 0 | |
| SI2309DS-T1-GE3 DISTI # 781-SI2309DS-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3 RoHS: Compliant | 0 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: SI2309DS OMO.#: OMO-SI2309DS |
MOSFET Plastic-Encapsulated MOSFET P-CH-60V |
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Mfr.#: SI2309DS-T1-E3 OMO.#: OMO-SI2309DS-T1-E3 |
MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3 |
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Mfr.#: SI2309DS OMO.#: OMO-SI2309DS-1190 |
MOSFET Plastic-Encapsulated MOSFET P-CH-60V |
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Mfr.#: SI2309DS , M1MA151KT2 OMO.#: OMO-SI2309DS-M1MA151KT2-1190 |
Neu und Original |
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Mfr.#: SI2309DS-T1 OMO.#: OMO-SI2309DS-T1-1190 |
MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3 |
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Mfr.#: SI2309DS-T1-E3 OMO.#: OMO-SI2309DS-T1-E3-VISHAY |
MOSFET P-CH 60V 1.25A SOT23-3 |
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Mfr.#: SI2309DS-T1-GE3 OMO.#: OMO-SI2309DS-T1-GE3-1190 |
P CH MOSFET, Transistor Polarity:P Channel, Continuous Drain Current Id:-1.25A, Drain Source Voltage Vds:-60V, On Resistance Rds(on):275mohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs |
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Mfr.#: SI2309DS-TI OMO.#: OMO-SI2309DS-TI-1190 |
Neu und Original |
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Mfr.#: SI2309DS-TI-E3 OMO.#: OMO-SI2309DS-TI-E3-1190 |
Neu und Original |
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Mfr.#: SI2309DST1 OMO.#: OMO-SI2309DST1-1190 |
Small Signal Field-Effect Transistor, 0.00125A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 |