FQP4N80

FQP4N80
Mfr. #:
FQP4N80
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 800V N-Channel QFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQP4N80 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
3.9 A
Rds On - Drain-Source-Widerstand:
3.6 Ohms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
130 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
QFET
Verpackung:
Rohr
Höhe:
16.3 mm
Länge:
10.67 mm
Serie:
FQP4N80
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
4.7 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
3.8 S
Abfallzeit:
35 ns
Produktart:
MOSFET
Anstiegszeit:
45 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
35 ns
Typische Einschaltverzögerungszeit:
16 ns
Teil # Aliase:
FQP4N80_NL
Gewichtseinheit:
0.063493 oz
Tags
FQP4N8, FQP4N, FQP4, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    V***n
    V***n
    RU

    Thank you!

    2019-04-19
    E***o
    E***o
    RU

    I received the parcel. Everything corresponds to the description. Thank you.

    2019-01-07
    D***t
    D***t
    JP

    good

    2019-04-09
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 3.9 A, 3.6 Ω, TO-220
***ark
Transistor,mosfet,n-Channel,800V V(Br)Dss,3.9A I(D),to-220 Rohs Compliant: Yes
***et Europe
Trans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) TO-220AB Rail
***r Electronics
Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.9A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 3.6ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 13
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
FQP4N80
DISTI # V79:2366_17797248
ON SemiconductorQF 800V 3.6OHM TO220914
  • 1000:$0.7045
  • 500:$0.9248
  • 100:$1.0201
  • 10:$1.3445
  • 1:$1.7270
FQP4N80
DISTI # V36:1790_06359891
ON SemiconductorQF 800V 3.6OHM TO2200
  • 1000000:$0.5733
  • 500000:$0.5765
  • 100000:$0.9062
  • 10000:$1.5160
  • 1000:$1.6200
FQP4N80
DISTI # FQP4N80FS-ND
ON SemiconductorMOSFET N-CH 800V 3.9A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube
3264In Stock
  • 5000:$0.6903
  • 3000:$0.7266
  • 1000:$0.7785
  • 100:$1.1937
  • 25:$1.4532
  • 10:$1.5310
  • 1:$1.7100
FQP4N80
DISTI # 26119583
ON SemiconductorQF 800V 3.6OHM TO220914
  • 23:$1.7270
FQP4N80
DISTI # FQP4N80
ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FQP4N80)
RoHS: Compliant
Min Qty: 410
Container: Bulk
Americas - 0
  • 4100:$0.7529
  • 2050:$0.7719
  • 1230:$0.7819
  • 820:$0.7919
  • 410:$0.7969
FQP4N80
DISTI # FQP4N80
ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP4N80)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€0.5439
  • 500:€0.5859
  • 100:€0.6349
  • 50:€0.6929
  • 25:€0.7619
  • 10:€0.8469
  • 1:€0.9529
FQP4N80
DISTI # FQP4N80
ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP4N80)
RoHS: Compliant
Min Qty: 1000
Asia - 0
  • 50000:$0.7046
  • 25000:$0.7163
  • 10000:$0.7410
  • 5000:$0.7675
  • 3000:$0.7959
  • 2000:$0.8265
  • 1000:$0.8596
FQP4N80
DISTI # FQP4N80
ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP4N80)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 10000:$0.5829
  • 6000:$0.5979
  • 4000:$0.6059
  • 2000:$0.6139
  • 1000:$0.6179
FQP4N80
DISTI # 512-FQP4N80
ON SemiconductorMOSFET 800V N-Channel QFET
RoHS: Compliant
1090
  • 1:$1.6200
  • 10:$1.3800
  • 100:$1.0600
  • 500:$0.9400
  • 1000:$0.7420
FQP4N80_Q
DISTI # 512-FQP4N80_Q
ON SemiconductorMOSFET 800V N-Channel QFET
RoHS: Not compliant
0
    FQP4N80Fairchild Semiconductor CorporationPower Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant
    5725
    • 1000:$0.7000
    • 500:$0.7300
    • 100:$0.7600
    • 25:$0.8000
    • 1:$0.8600
    FQP4N80Fairchild Semiconductor Corporation 35
    • 15:$0.9118
    • 4:$1.4588
    • 1:$1.8235
    FQP4N80
    DISTI # 6715121
    ON SemiconductorMOSFET N-CHANNEL 800V 3.9A TO220AB, PK1410
    • 25:£0.4800
    • 5:£0.4920
    FQP4N80Fairchild Semiconductor Corporation 950
      Bild Teil # Beschreibung
      MURS160T3G

      Mfr.#: MURS160T3G

      OMO.#: OMO-MURS160T3G

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      STP5N80K5

      Mfr.#: STP5N80K5

      OMO.#: OMO-STP5N80K5

      MOSFET N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in a TO-220 package
      STP4LN80K5

      Mfr.#: STP4LN80K5

      OMO.#: OMO-STP4LN80K5

      MOSFET N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in a TO-220 package
      FG28X5R1H105KRT00

      Mfr.#: FG28X5R1H105KRT00

      OMO.#: OMO-FG28X5R1H105KRT00

      Multilayer Ceramic Capacitors MLCC - Leaded RAD 50V 1uF X5R 10% LS:5mm
      FA18X8R1H104KRU06

      Mfr.#: FA18X8R1H104KRU06

      OMO.#: OMO-FA18X8R1H104KRU06

      Multilayer Ceramic Capacitors MLCC - Leaded 50V 0.1uF X8R 10% RAD LS:2.5mm AECQ200
      FA26X8R1E105KNU06

      Mfr.#: FA26X8R1E105KNU06

      OMO.#: OMO-FA26X8R1E105KNU06

      Multilayer Ceramic Capacitors MLCC - Leaded 25V 1uF X8R 10% RAD LS:5mm AEC-Q200
      STP4LN80K5

      Mfr.#: STP4LN80K5

      OMO.#: OMO-STP4LN80K5-STMICROELECTRONICS

      MOSFET N-CHANNEL 800V 3A TO220
      STP5N80K5

      Mfr.#: STP5N80K5

      OMO.#: OMO-STP5N80K5-STMICROELECTRONICS

      N-CHANNEL 800 V, 1.50 OHM TYP.,
      MURS160T3G

      Mfr.#: MURS160T3G

      OMO.#: OMO-MURS160T3G-ON-SEMICONDUCTOR

      Rectifiers 600V 1A Ultrafast
      CGGBP.18.4.A.02

      Mfr.#: CGGBP.18.4.A.02

      OMO.#: OMO-CGGBP-18-4-A-02-TAOGLAS

      Antennas GPS/GLONASS/Beidou pasv Patch 18*18*4mm
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1984
      Menge eingeben:
      Der aktuelle Preis von FQP4N80 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,62 $
      1,62 $
      10
      1,38 $
      13,80 $
      100
      1,06 $
      106,00 $
      500
      0,94 $
      470,00 $
      1000
      0,74 $
      742,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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