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FDL100N50F

FDL100N50F
Mfr. #:
FDL100N50F
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET UniFET 500V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDL100N50F Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-264-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
500 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
43 mOhms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 kW
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
UniFET
Verpackung:
Rohr
Höhe:
26.4 mm
Länge:
20.2 mm
Serie:
FDL100N50F
Transistortyp:
1 N-Channel
Typ:
RFET
Breite:
5.2 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
95 S
Abfallzeit:
105 ns
Produktart:
MOSFET
Anstiegszeit:
186 ns
Werkspackungsmenge:
375
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
202 ns
Typische Einschaltverzögerungszeit:
63 ns
Gewichtseinheit:
0.238311 oz
Tags
FDL10, FDL1, FDL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, UniFETTM, FRFET®, 500 V, 100 A, 55 mΩ, TO-264
*** Source Electronics
Trans MOSFET N-CH 500V 100A 3-Pin(3+Tab) TO-264AA Tube / MOSFET N-CH 500V 100A TO-264
***nell
MOSFET, N-CH, 500V, 100A, TO-264AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V
***roFlash
Power Field-Effect Transistor, 100A I(D), 500V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***el Electronic
DC DC Converters 1 (Unlimited) 1 8-SMD Module, 5 Leads Surface Mount Isolated Module ITE (Commercial) ECONOLINE R1SE (E-Series) (1W) -40°C~85°C 0.50Lx0.42W x 0.26 H 12.8mmx10.7mmx6.7mm Module DC-DC 5VIN 1-OUT 5V 0.2A 1W 5-Pin SMD
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, QFET®, 500 V, 40 A, 110 mΩ, TO-264
***r Electronics
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, QFET®, FRFET®, 500 V, 40 A, 110 mΩ, TO-264
***r Electronics
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
*** Electronics
Trans MOSFET N-CH 400V 50A 3-Pin(3+Tab) TO-264 Rail
***ser
MOSFETs 400V N-Channel QFET
Teil # Mfg. Beschreibung Aktie Preis
FDL100N50F
DISTI # C1S541901537904		ON SemiconductorMOSFETs
RoHS: Compliant		413
  • 375:$8.2200
FDL100N50F
DISTI # FDL100N50F-ND		ON SemiconductorMOSFET N-CH 500V 100A TO-264
RoHS: Compliant
Min Qty: 1
Container: Tube		881In Stock
  • 375:$12.6847
  • 10:$16.3670
  • 1:$18.0000
FDL100N50F
DISTI # FDL100N50F		ON SemiconductorTrans MOSFET N-CH 500V 100A 3-Pin(3+Tab) TO-264AA - Rail/Tube (Alt: FDL100N50F)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 112
  • 1:$8.6900
  • 10:$8.6900
  • 25:$8.6900
  • 50:$8.6900
  • 100:$8.6900
  • 500:$7.9900
  • 1000:$7.8900
FDL100N50F
DISTI # 31Y1379		ON SemiconductorMOSFET, N-CH, 500V, 100A, TO-264AA-3,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.043ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,MSL:- RoHS Compliant: Yes310
  • 1:$15.6200
  • 10:$14.3600
  • 25:$13.7700
  • 50:$12.9500
  • 100:$12.1300
  • 250:$11.5400
  • 500:$10.7900
FDL100N50F
DISTI # 512-FDL100N50F		ON SemiconductorMOSFET UniFET 500V
RoHS: Compliant		836
  • 1:$15.6200
  • 10:$14.3600
  • 25:$13.7700
  • 100:$12.1300
  • 250:$11.5400
  • 500:$10.7900
FDL100N50FFairchild Semiconductor CorporationPower Field-Effect Transistor, 100A I(D), 500V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
RoHS: Compliant		2570
  • 1000:$9.7400
  • 500:$10.2500
  • 100:$10.6700
  • 25:$11.1300
  • 1:$11.9800
FDL100N50F
DISTI # 7599128		ON SemiconductorMOSFET N-CH 500V 100A UNIFET TO264AA, EA64
  • 1:£13.1900
  • 13:£12.1300
FDL100N50F
DISTI # 7599128P		ON SemiconductorMOSFET N-CH 500V 100A UNIFET TO264AA, TU446
  • 13:£12.1300
FDL100N50F
DISTI # 2453857		ON SemiconductorMOSFET, N-CH, 500V, 100A, TO-264AA-3
RoHS: Compliant		602
  • 1:£12.2300
  • 5:£11.8300
  • 10:£10.4200
  • 50:£9.8100
  • 100:£9.1900
FDL100N50F
DISTI # 2453857		ON SemiconductorMOSFET, N-CH, 500V, 100A, TO-264AA-3
RoHS: Compliant		310
  • 1:$24.7200
  • 10:$22.7300
  • 25:$21.7900
  • 100:$19.2000
  • 250:$18.2600
  • 500:$17.0800
  • 1000:$15.6700
Bild Teil # Beschreibung
AD817ARZ

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 Gate Drivers EL7202CSZ DL MSFT DRVR
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 TVS Diodes / ESD Suppressors 600W 15V Bidirect
TOP242PN

Mfr.#: TOP242PN

OMO.#: OMO-TOP242PN

 AC/DC Converters 10W 85-265 VAC 15W 230 VAC
SN74LVCC3245APWR

Mfr.#: SN74LVCC3245APWR

OMO.#: OMO-SN74LVCC3245APWR

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Mfr.#: 109P0412J3013

OMO.#: OMO-109P0412J3013

 DC Fans DC Fan, 40x28mm, 12VDC, Groove for Lead, Tachometer
AD817ARZ

Mfr.#: AD817ARZ

OMO.#: OMO-AD817ARZ-ANALOG-DEVICES-INC-ADI

 Precision Amplifiers High Spd Low Pwr Wide Supply Range
SMBJ15CA-TR

Mfr.#: SMBJ15CA-TR

OMO.#: OMO-SMBJ15CA-TR-STMICROELECTRONICS

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Mfr.#: 0324025.HXP

OMO.#: OMO-0324025-HXP-LITTELFUSE

 Cartridge Fuses 250V 25A Fast Acting
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von FDL100N50F dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
11,63 $
11,63 $
10
10,69 $
106,90 $
25
10,25 $
256,25 $
100
9,03 $
903,00 $
250
8,58 $
2 145,00 $
500
8,03 $
4 015,00 $
1000
7,92 $
7 920,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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