CSD19501KCS

CSD19501KCS
Mfr. #:
CSD19501KCS
Beschreibung:
MOSFET 80V N-CH NexFET Pwr MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CSD19501KCS Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
CSD19501KCS Mehr Informationen CSD19501KCS Product Details
Produkteigenschaft
Attributwert
Hersteller:
Texas Instruments
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
6.6 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.6 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
38 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
217 W
Aufbau:
Single
Handelsname:
NexFET
Verpackung:
Rohr
Höhe:
16.51 mm
Länge:
10.67 mm
Serie:
CSD19501KCS
Transistortyp:
1 N-Channel
Breite:
4.7 mm
Marke:
Texas Instruments
Vorwärtstranskonduktanz - Min:
137 S
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.211644 oz
Tags
CSD1950, CSD19, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
80V, N ch NexFET MOSFET™, single TO-220, 6.6mOhm 3-TO-220 -55 to 175
***ical
Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220 Tube
***p One Stop Global
Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube
***et Europe
Trans MOSFET N-CH 80V 100A 3-Pin TO-220
***ark
Mosfet, N Channel, 80V, 100A, To-220-3
***i-Key
MOSFET N-CH 80V 100A TO220
***ment14 APAC
Prices include import duty and tax. MOSFET, N CHANNEL, 80V, 100A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.6V; Power Dissipation Pd:217W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 80V, 100A, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:80V; Resistenza di Attivazione Rds(on):0.0055ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.6V; Dissipazione di Potenza Pd:217W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***AS INSTRUM
This 80 V, 5.5 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Teil # Beschreibung Aktie Preis
CSD19501KCS
DISTI # V36:1790_07248847
Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
67
  • 10000:$0.7451
  • 5000:$0.7603
  • 2500:$0.7923
  • 1000:$0.8506
  • 500:$1.0052
  • 100:$1.1338
  • 10:$1.3702
  • 1:$1.5697
CSD19501KCS
DISTI # V99:2348_07248847
Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
33
  • 10000:$0.7451
  • 5000:$0.7603
  • 2500:$0.7923
  • 1000:$0.8506
  • 500:$1.0052
  • 100:$1.1338
  • 10:$1.3702
  • 1:$1.5697
CSD19501KCS
DISTI # 296-37286-5-ND
MOSFET N-CH 80V 100A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube
2379In Stock
  • 5000:$0.9066
  • 2500:$0.9415
  • 1000:$1.0112
  • 500:$1.2205
  • 100:$1.5692
  • 50:$1.7436
  • 10:$1.9530
  • 1:$2.1600
CSD19501KCS
DISTI # 31338795
Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
67
  • 8:$1.5697
CSD19501KCS
DISTI # 25862359
Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
33
  • 10:$1.3841
  • 8:$1.5875
CSD19501KCS
DISTI # CSD19501KCS
Trans MOSFET N-CH 80V 100A 3-Pin TO-220 - Rail/Tube (Alt: CSD19501KCS)
RoHS: Compliant
Min Qty: 400
Container: Tube
Americas - 0
  • 400:$0.9199
  • 500:$0.8749
  • 900:$0.8459
  • 2000:$0.8179
  • 4000:$0.7949
CSD19501KCS80V, N-Channel NexFET&#153,Power MOSFET, CSD19501KCS4006
  • 1000:$0.7200
  • 750:$0.7500
  • 500:$0.8900
  • 250:$1.0500
  • 100:$1.1200
  • 25:$1.2800
  • 10:$1.3800
  • 1:$1.5300
CSD19501KCS
DISTI # 595-CSD19501KCS
MOSFET 80V N-CH NexFET Pwr MOSFET
RoHS: Compliant
544
  • 1:$1.8700
  • 10:$1.5900
  • 100:$1.2700
  • 500:$1.1100
  • 1000:$0.9200
  • 2500:$0.8560
CSD19501KCSPower Field-Effect Transistor, 100A I(D), 80V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
RoHS: Compliant
2200
  • 1000:$0.8300
  • 500:$0.8700
  • 100:$0.9100
  • 25:$0.9500
  • 1:$1.0200
CSD19501KCS
DISTI # 2419491
MOSFET, N CHANNEL, 80V, 100A, TO-220-3
RoHS: Compliant
0
  • 1:$2.9700
  • 10:$2.5200
  • 100:$2.0100
  • 500:$1.7600
  • 1000:$1.4600
  • 2500:$1.3600
CSD19501KCS
DISTI # C1S746203309619
Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
67
  • 400:$1.3599
CSD19501KCS
DISTI # C1S746203290791
Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
33
  • 100:$1.1438
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OMO.#: OMO-MBRB20100CT-TP

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Mfr.#: UCC24610DR

OMO.#: OMO-UCC24610DR

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UCC28019ADR

Mfr.#: UCC28019ADR

OMO.#: OMO-UCC28019ADR

Power Factor Correction - PFC 8P Cont Conduction Mode PFC Controller
TL431AIDBZR

Mfr.#: TL431AIDBZR

OMO.#: OMO-TL431AIDBZR

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FDPF18N50

Mfr.#: FDPF18N50

OMO.#: OMO-FDPF18N50

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Mfr.#: BAT54HT1G

OMO.#: OMO-BAT54HT1G

Schottky Diodes & Rectifiers 30V 200mW Single
UCC25630-3DDBR

Mfr.#: UCC25630-3DDBR

OMO.#: OMO-UCC25630-3DDBR

Switching Controllers LLC Resonant
TLV1117-33CDCYR

Mfr.#: TLV1117-33CDCYR

OMO.#: OMO-TLV1117-33CDCYR

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Verfügbarkeit
Aktie:
531
Auf Bestellung:
2514
Menge eingeben:
Der aktuelle Preis von CSD19501KCS dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,02 $
2,02 $
10
1,71 $
17,10 $
100
1,37 $
137,00 $
500
1,19 $
595,00 $
1000
0,99 $
993,00 $
2500
0,92 $
2 310,00 $
5000
0,89 $
4 450,00 $
10000
0,86 $
8 560,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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