SI4840BDY-T1-E3

Mfr. #:: SI4840BDY-T1-E3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET 40V Vds 20V Vgs SO-8
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI4840BDY-T1-E3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI4840BDY-T1-E3 Datasheet SI4840BDY-T1-E3 Datasheet (P4-P6)SI4840BDY-T1-E3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:: SI4840BDY-T1-E3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: E

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: SO-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 40 V

Id - Kontinuierlicher Drainstrom:: 19 A

Rds On - Drain-Source-Widerstand:: 9 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1 V

Vgs - Gate-Source-Spannung:: 10 V

Qg - Gate-Ladung:: 33 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 6 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: TrenchFET

Verpackung:: Spule

Höhe:: 1.75 mm

Länge:: 4.9 mm

Serie:: SI4

Transistortyp:: 1 N-Channel

Breite:: 3.9 mm

Marke:: Vishay / Siliconix

Vorwärtstranskonduktanz - Min:: 56 S

Abfallzeit:: 10 ns

Produktart:: MOSFET

Anstiegszeit:: 15 ns

Werkspackungsmenge:: 2500

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 30 ns

Typische Einschaltverzögerungszeit:: 10 ns

Teil # Aliase:: SI4840BDY-E3

Gewichtseinheit:: 0.006596 oz

Tags: SI4840BDY-T, SI4840BD, SI4840B, SI4840, SI484, SI48, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4840BDY-T1-E3 Bewertungen und Rezensionen

E**o

very fast delevery

2019-01-10

D***c

all ok

2019-03-20

V***v

Thank you!

2019-05-25

SI4840BDY-T1-E3 Beschreibung

***th Star Micro: Transistor MOSFET N-CH 40V 12.4A 8-Pin SOIC N T/R

***ure Electronics: Single N-Channel 40 V 9 mOhm Surface Mount Power Mosfet - SOIC-8

***et Europe: Trans MOSFET N-CH 40V 12.4A 8-Pin SOIC N T/R

***ical: Trans MOSFET N-CH 40V 19A 8-Pin SOIC N T/R

***C: Trans MOSFET N-CH 40V 12.4A 8-Pin SOIC

***ark: N-Channel 40-V (D-S) Mosfet Rohs Compliant: No

***ied Electronics & Automation: MOSFET N-CH 40V 19A 8SOIC

***: N-CHANNEL 40-V (D-S) MOSFET

***ukat: N-Ch 40V 19A 2,5W 0,009R SO8

***nell: MOSFET, N, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:40V; Cont Current Id:19A; On State Resistance:0.009ohm; Voltage Vgs Rds on Measurement:10V; Case Style:SO-8; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Max Current Id:12.4A; Max Junction Temperature Tj:150°C; Max Voltage Vds:40V; Max Voltage Vgs:20V; Max Voltage Vgs th:3V; Min Voltage Vgs th:1V; Power Dissipation:2.5W; Power Dissipation Pd:6W; Rds Measurement Voltage:10V; Rise Time:150ns; Transistor Case Style:SO

***ment14 APAC: MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:40V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12.4A; Junction Temperature Tj Max:150°C; Package / Case:SOIC-8; Power Dissipation Pd:6W; Power Dissipation Pd:2.5W; Rise Time:150ns; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V

SI4840BDY-T1-E3 Mehr Informationen

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI4840BDY-T1-E3 DISTI # V72:2272_09215589	Vishay Intertechnologies	Trans MOSFET N-CH 40V 12.4A 8-Pin SOIC N T/R RoHS: Compliant	918	500:$0.8884 250:$1.0008 100:$1.0548 25:$1.3549 10:$1.3691 1:$1.8068
SI4840BDY-T1-E3 DISTI # V36:1790_09215589	Vishay Intertechnologies	Trans MOSFET N-CH 40V 12.4A 8-Pin SOIC N T/R RoHS: Compliant	0	2500000:$0.6545 1250000:$0.6546 250000:$0.6604 25000:$0.6687 2500:$0.6700
SI4840BDY-T1-E3 DISTI # SI4840BDY-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 40V 19A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	41915In Stock	1000:$0.7553 500:$0.9567 100:$1.1582 10:$1.4850 1:$1.6600
SI4840BDY-T1-E3 DISTI # SI4840BDY-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 40V 19A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	41915In Stock	1000:$0.7553 500:$0.9567 100:$1.1582 10:$1.4850 1:$1.6600
SI4840BDY-T1-E3 DISTI # SI4840BDY-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 40V 19A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	40000In Stock	12500:$0.6258 5000:$0.6502 2500:$0.6844
SI4840BDY-T1-E3 DISTI # 32669265	Vishay Intertechnologies	Trans MOSFET N-CH 40V 12.4A 8-Pin SOIC N T/R RoHS: Compliant	15000	2500:$0.3881
SI4840BDY-T1-E3 DISTI # 31958249	Vishay Intertechnologies	Trans MOSFET N-CH 40V 12.4A 8-Pin SOIC N T/R RoHS: Compliant	918	10:$1.8068
SI4840BDY-T1-E3 DISTI # 30605973	Vishay Intertechnologies	Trans MOSFET N-CH 40V 12.4A 8-Pin SOIC N T/R RoHS: Compliant	80	16:$1.6250
SI4840BDY-T1-E3 DISTI # SI4840BDY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 12.4A 8-Pin SOIC N T/R (Alt: SI4840BDY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 21000	25000:€0.3809 15000:€0.4099 10000:€0.4439 5000:€0.5149 2500:€0.7559
SI4840BDY-T1-E3 DISTI # SI4840BDY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 12.4A 8-Pin SOIC N T/R - Cut TR (SOS) (Alt: SI4840BDY-T1-E3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 8	1250:$0.5647 625:$0.5783 313:$0.5926 157:$0.6076 79:$0.6234 40:$0.6400 1:$0.6575
SI4840BDY-T1-E3 DISTI # SI4840BDY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 12.4A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4840BDY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.6149 15000:$0.6319 10000:$0.6499 5000:$0.6769 2500:$0.6979
SI4840BDY-T1-E3 DISTI # 40P0805	Vishay Intertechnologies	MOSFET Transistor, N Channel, 19 A, 40 V, 0.0074 ohm, 10 V, 1 V RoHS Compliant: Yes	7863	500:$0.9580 250:$1.0300 100:$1.1100 50:$1.2100 25:$1.3100 10:$1.4100 1:$1.6900
SI4840BDY-T1-E3 DISTI # 33P5266	Vishay Intertechnologies	MOSFET, N CHANNEL, 40V, 19A, SOIC-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0074ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	0	10000:$0.6100 6000:$0.6240 4000:$0.6480 2000:$0.7200 1000:$0.7920 1:$0.8260
SI4840BDY-T1-E3. DISTI # 28AC2148	Vishay Intertechnologies	N-CHANNEL 40-V (D-S) MOSFET ROHS COMPLIANT: NO	0	10000:$0.6100 6000:$0.6240 4000:$0.6480 2000:$0.7200 1000:$0.7920 1:$0.8260
SI4840BDY-T1-E3 DISTI # 70459548	Vishay Siliconix	MOSFET N-CH 40V 19A 8SOIC RoHS: Compliant	0	2500:$1.0190
SI4840BDY-T1-E3 DISTI # 781-SI4840BDY-E3	Vishay Intertechnologies	MOSFET 40V Vds 20V Vgs SO-8 RoHS: Compliant	8449	1:$1.6700 10:$1.3800 100:$1.0600 500:$0.9120 1000:$0.7190 2500:$0.6710 5000:$0.6380 10000:$0.6140
SI4840BDY-T1-E3	Vishay Intertechnologies		17
SI4840BDY-T1-E3	Vishay Siliconix	POWER, FET	341	295:$0.9435 135:$1.0200 1:$2.0400
SI4840BDY-T1-E3	Vishay Intertechnologies	POWER, FET	13	3:$1.5300 1:$2.0400
SI4840BDY-T1-E3	Vishay Intertechnologies	POWER, FET	1400	1167:$0.7800 625:$0.8580 1:$2.0800
SI4840BDY-T1-E3	Vishay Intertechnologies	POWER, FET	1735	1011:$0.9000 542:$0.9900 1:$2.4000
SI4840BDY-T1-E3 DISTI # SI4840BDY-E3	Vishay Intertechnologies	Transistor: N-MOSFET,unipolar,40V,9.9A,6W,SO8	3676	500:$0.4300 100:$0.4600 25:$0.5200 5:$0.5600 1:$0.6000
SI4840BDY-T1-E3 DISTI # 1684057RL	Vishay Intertechnologies	MOSFET, N, SO-8 RoHS: Compliant	0	1000:$1.1400 500:$1.4500 100:$1.7500 10:$2.2400 1:$2.5000
SI4840BDY-T1-E3 DISTI # 1684057	Vishay Intertechnologies	MOSFET, N, SO-8 RoHS: Compliant	7936	1000:$1.1400 500:$1.4500 100:$1.7500 10:$2.2400 1:$2.5000
SI4840BDY-T1-E3 DISTI # 1684057	Vishay Intertechnologies	MOSFET, N, SO-8	11485	500:£0.7100 250:£0.7710 100:£0.8320 10:£1.1300 1:£1.4900
SI4840BDY-T1-E3	Vishay Intertechnologies	MOSFET 40V Vds 20V Vgs SO-8 RoHS: Compliant	Americas -
SI4840BDY-T1-E3 DISTI # XSKDRABV0026486	Vishay Intertechnologies	GBPC1 RoHS: Compliant	16000 in Stock0 on Order	16000:$0.5200 2500:$0.5571
SI4840BDY-T1-E3 DISTI # C1S806001130234	Vishay Intertechnologies	MOSFETs RoHS: Compliant	80	50:$1.1000 10:$1.1600 1:$1.3000

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1989
Menge eingeben:

Der aktuelle Preis von SI4840BDY-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,67 $~~; ~~1,67 $~~

10: ~~1,38 $~~; ~~13,80 $~~

100: ~~1,06 $~~; ~~106,00 $~~

500: ~~0,91 $~~; ~~456,00 $~~

1000: ~~0,72 $~~; ~~719,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SI4840BDY-T 4
SI4840BD 5
SI4840B 6
SI4840 15
SI484 45
SI48 447
SI4 2994

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