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FCI7N60

FCI7N60
Mfr. #:
FCI7N60
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET HIGH POWER
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FCI7N60 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-262-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
7 A
Rds On - Drain-Source-Widerstand:
600 mOhms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
83 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
SuperFET
Verpackung:
Rohr
Höhe:
7.88 mm
Länge:
10.29 mm
Serie:
FCI7N60
Transistortyp:
1 N-Channel
Breite:
4.83 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
32 ns
Produktart:
MOSFET
Anstiegszeit:
55 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
75 ns
Typische Einschaltverzögerungszeit:
35 ns
Gewichtseinheit:
0.073511 oz
Tags
FCI7, FCI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, I2PAK
***ure Electronics
Single N-Channel 600 V 0.6 Ohm 30 nC 83 W Silicon Through Hole Mosfet - TO-262
***ical
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) I2PAK Rail
***o-Tech
MOSFET N-Channel 600V 7A SuperFET I2PAK
***i-Key
MOSFET N-CH 600V 7A I2PAK
***eco
TEW CREATED FOR SUZHOU <AZ
***ser
IGBTs HIGH_POWER
***ark
MOSFET, N CH, 600V, 7A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; No. of Pins:3 ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N CH, 600V, 7A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-262; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Teil # Mfg. Beschreibung Aktie Preis
FCI7N60
DISTI # 33134434		ON SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) I2PAK Tube1000
  • 1000:$0.9232
FCI7N60
DISTI # FCI7N60-ND		ON SemiconductorMOSFET N-CH 600V 7A I2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$0.9232
FCI7N60
DISTI # V36:1790_06359887		ON SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) I2PAK Tube0
  • 1000000:$0.7350
  • 500000:$0.7354
  • 100000:$0.7915
  • 10000:$0.9037
  • 1000:$0.9232
FCI7N60
DISTI # FCI7N60		ON SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) I2PAK Rail - Rail/Tube (Alt: FCI7N60)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$0.7479
  • 5000:$0.7669
  • 3000:$0.7769
  • 2000:$0.7869
  • 1000:$0.7919
FCI7N60
DISTI # FCI7N60		ON SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) I2PAK Rail - Bulk (Alt: FCI7N60)
RoHS: Compliant
Min Qty: 348
Container: Bulk		Americas - 0
  • 3480:$0.8879
  • 1740:$0.9109
  • 1044:$0.9229
  • 696:$0.9349
  • 348:$0.9409
FCI7N60
DISTI # FCI7N60		ON SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) I2PAK Rail (Alt: FCI7N60)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.7979
  • 500:€0.8109
  • 100:€0.8229
  • 50:€0.8359
  • 25:€0.9209
  • 10:€1.0779
  • 1:€1.3179
FCI7N60
DISTI # 512-FCI7N60		ON SemiconductorMOSFET HIGH POWER
RoHS: Compliant		2994
  • 1:$1.7800
  • 10:$1.5100
  • 100:$1.2100
  • 500:$1.0600
  • 1000:$0.8790
  • 2000:$0.8660
FCI7N60Fairchild Semiconductor CorporationPower Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		398
  • 1000:$0.8800
  • 500:$0.9300
  • 100:$0.9700
  • 25:$1.0100
  • 1:$1.0900
FCI7N60Fairchild Semiconductor CorporationPower Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		200
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1985
    Menge eingeben:
    Der aktuelle Preis von FCI7N60 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,78 $
    1,78 $
    10
    1,51 $
    15,10 $
    100
    1,21 $
    121,00 $
    500
    1,06 $
    530,00 $
    1000
    0,88 $
    879,00 $
    2000
    0,87 $
    1 732,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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