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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| PHT11N06LT,135 DISTI # PHT11N06LT,135-ND | NXP Semiconductors | MOSFET N-CH 55V 4.9A SOT223 RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| PHT11N06LT135 DISTI # PHT11N06LT135 | Avnet, Inc. | - Bulk (Alt: PHT11N06LT135) Min Qty: 1000 Container: Bulk | Americas - 0 |
|
| PHT11N06LT,135 DISTI # 771-PHT11N06LT135 | Nexperia | MOSFET TAPE13 PWRMOS RoHS: Compliant | 0 | |
| PHT11N06LT135 | NXP Semiconductors | Now Nexperia PHT11N06LT - Power Field-Effect Transistor, 4.9A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-73 RoHS: Not Compliant | 15600 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: PHT11N06 OMO.#: OMO-PHT11N06-1190 |
Neu und Original |
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Mfr.#: PHT11N06LT OMO.#: OMO-PHT11N06LT-1190 |
INSTOCK |
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Mfr.#: PHT11N06LT , H9TKNNN4KDM |
Neu und Original |
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Mfr.#: PHT11N06LT,135 |
MOSFET N-CH 55V 4.9A SOT223 |
|
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Mfr.#: PHT11N06LT135 OMO.#: OMO-PHT11N06LT135-1190 |
Now Nexperia PHT11N06LT - Power Field-Effect Transistor, 4.9A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: PHT11N06T OMO.#: OMO-PHT11N06T-1190 |
Neu und Original |