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2SK3799

2SK3799
Mfr. #:
2SK3799
Hersteller:
Toshiba America Electronic Components
Beschreibung:
MOSFET, N, 900V, TO-220SIS, Transistor Polarity:N Channel, Continuous Drain Current Id:8A, Drain Source Voltage Vds:900V, On Resistance Rds(on):1.3ohm, Rds(on) Test Voltage Vgs:10V, Threshold Vo
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2SK3799 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
2SK3799, 2SK379, 2SK37, 2SK3, 2SK
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 900V 8A 3-Pin(3+Tab) TO-220NIS
***nell
MOSFET, N, 900V, TO-220SIS; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 1.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 50W; Transistor Case Style: TO-220SIS; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Id Max: 8A; Termination Type: Through Hole; Voltage Vds Typ: 900V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
***el Electronic
TRANSISTOR 8 A, 900 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10U1B, SC-67, 3 PIN, FET General Purpose Power
***ark
MOSFET Transistor, N Channel, 9 A, 900 V, 1.12 ohm, 10 V, 5 V
***emi
N-Channel QFET® MOSFET 900V, 9.0A, 1.4Ω
*** Source Electronics
MOSFET N-CH 900V 9A TO-3P / Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3P Tube
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 6 A, 2.3 Ω, TO-220F
***ure Electronics
N-Channel 900 V 2.3 Ohm Through Hole Mosfet - TO-220F
***ical
Trans MOSFET N-CH 900V 6A 3-Pin(3+Tab) TO-220FP Rail
***enic
900V 6A 56W 2.3´Î@10V3A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***ment14 APAC
MOSFET, N CH, 900V, 6A, TO-220F-3; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Source Voltage Vds:900V; On Resistance
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Variants: Enhancement mode Power dissipation: 56 W
*** Stop Electro
Power Field-Effect Transistor, 6A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***nell
MOSFET, N, 900V; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 2.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 56W; Transistor Case Style: TO-220F; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Termination Type: Through Hole; Transistor Type: Enhancement; Voltage Vds Typ: 900V; Voltage Vgs Rds on Measurement: 10V
***ure Electronics
Single N-Channel 650 V 0.93 Ohms Flange Mount Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 650V 8.5A 3-Pin(3+Tab) TO-220AB
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Power dissipation: 167 W
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 8.5A I(D), 650V, 0.93ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.93ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 167W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 8.5A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 21A; Voltage Vds Typ: 650V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V
***icroelectronics
N-Channel 800V - 0.8 Ohm - 9A - TO-220FP Zener-Protected SuperMESH(TM) POWER MOSFET
*** Source Electronics
Trans MOSFET N-CH 800V 9A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 800V 9A TO-220FP
***r Electronics
Power Field-Effect Transistor, 9A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:800V; On Resistance Rds(on):900mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:40W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:6A; Current Id Max:9A; On State resistance @ Vgs = 10V:900mohm; Package / Case:TO-220FP; Power Dissipation Pd:40W; Power Dissipation Pd:40W; Pulse Current Idm:36A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:3.75V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-channel 650 V, 0.39 Ohm typ., 8.5 A MDmesh M5 Power MOSFET in TO-220FP package
***ark
Power Mosfet, N Channel, 8.5 A, 650 V, 0.39 Ohm, 10 V, 4 V Rohs Compliant: Yes
***ical
Trans MOSFET N-CH Si 650V 8.5A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N CH, 650V, 8.5A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.39ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; P
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 8.5A I(D), 650V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-CHANNEL 700 V - 0.75 OHM - 8.6 A TO-220FP ZENER-PROTECTED SuperMESH POWER MOSFET
*** Source Electronics
Trans MOSFET N-CH 700V 8.6A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 700V 8.6A TO-220FP
***el Electronic
STMICROELECTRONICS STP10NK70ZFP Power MOSFET, N Channel, 4.5 A, 700 V, 750 mohm, 10 V, 3.75 V
***enic
700V 8.6A 35W 850m´Î@10V4.5A 4.5V@100Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***ponent Stockers USA
8.6 A 700 V 0.85 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 8.6A I(D), 700V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 700V, 8.6A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.5A; Drain Source Voltage Vds: 700V; On Resistance Rds(on): 0.75ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V
Teil # Mfg. Beschreibung Aktie Preis
2SK3799
DISTI # 25M1426		Toshiba America Electronic ComponentsMOSFET, N, 900V, TO-220SIS,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:900V,On Resistance Rds(on):1.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:50W RoHS Compliant: Yes110
  • 500:$1.8800
  • 250:$1.9500
  • 100:$2.3200
  • 50:$2.6700
  • 25:$2.8500
  • 10:$3.2500
  • 1:$3.7600
2SK3799,S5Q(JToshiba America Electronic ComponentsPOWER FIELD-EFFECT TRANSISTOR, 8A I(D), 900V, 1.3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET48
  • 32:$2.1560
  • 10:$2.4500
  • 1:$3.9200
2SK3799(Q,M)
DISTI # 2SK3799		Toshiba America Electronic ComponentsTransistor: N-MOSFET,unipolar,900V,8A,50W,TO220FP33
  • 50:$1.6600
  • 10:$1.8500
  • 3:$2.0800
  • 1:$2.3200
2SK3799
DISTI # 1300784		Toshiba America Electronic ComponentsMOSFET, N, 900V, TO-220SIS
RoHS: Compliant		107
  • 500:£1.8800
  • 250:£2.1400
  • 100:£2.4100
  • 10:£2.6800
  • 1:£3.7600
2SK3799
DISTI # 1300784		Toshiba America Electronic ComponentsMOSFET, N, 900V, TO-220SIS
RoHS: Compliant		107
  • 250:$3.3300
  • 100:$3.5200
  • 25:$3.9700
  • 1:$4.2500
Bild Teil # Beschreibung
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von 2SK3799 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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