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MR0A16AYS35R

MR0A16AYS35R
Mfr. #:
MR0A16AYS35R
Hersteller:
Everspin Technologies
Beschreibung:
NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MR0A16AYS35R Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
MR0A16AYS35R Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Everspin-Technologien
Produktkategorie:
NVRAM
RoHS:
Y
Paket / Koffer:
TSOP-44
Oberflächentyp:
Parallel
Speichergröße:
1 Mbit
Organisation:
64 k x 16
Datenbusbreite:
16 bit
Zugriffszeit:
35 ns
Versorgungsspannung - Max.:
3.6 V
Versorgungsspannung - Min.:
3 V
Betriebsversorgungsstrom:
105 mA
Minimale Betriebstemperatur:
0 C
Maximale Betriebstemperatur:
+ 70 C
Serie:
MR0A16A
Verpackung:
Spule
Marke:
Everspin-Technologien
Montageart:
SMD/SMT
Feuchtigkeitsempfindlich:
ja
Produktart:
NVRAM
Werkspackungsmenge:
1500
Unterkategorie:
Speicher & Datenspeicherung
Tags
MR0A1, MR0A, MR0
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
NVRAM MRAM Parallel 1M-Bit 3.3V 44-Pin TSOP-II T/R
***i-Key
IC MRAM 1MBIT 35NS 44TSOP
Magnetoresistive Random Access Memory (MRAM)
Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
Everspin MRAM
MR0A08B / MR0D08B / MR0A16A 1Mb Parallel MRAM
Everspin Technologies MR0A08B, MR0D08B, and MR0A16A are 1,048,576-bit magnetoresistive random access memory (MRAM) devices. The Everspin MRAM devices are available in a variety of specifications, such as dual supply, serial SPI, and organized as 131,072 words of 8 bits or 65,536 words of 16 bits. These MRAM devices are as fast 35ns or 45ns read/write timing cycles with no write delays and unlimited read/write endurance. 
Teil # Mfg. Beschreibung Aktie Preis
MR0A16AYS35R
DISTI # MR0A16AYS35R-ND		NXP SemiconductorsIC RAM 1M PARALLEL 44TSOP
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    MR0A16AYS35R
    DISTI # MR0A16AYS35REV-ND    		Everspin TechnologiesIC RAM 1M PARALLEL 44TSOP
    RoHS: Compliant
    Min Qty: 1500
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 1500:$8.8977
    MR0A16AYS35
    DISTI # 936-MR0A16AYS35    		Everspin TechnologiesNVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM
    RoHS: Compliant    		85
    • 1:$11.8400
    • 10:$10.9700
    • 25:$10.7200
    • 50:$10.6600
    • 100:$9.3900
    • 250:$8.9200
    • 500:$8.8300
    MR0A16AYS35R
    DISTI # 936-MR0A16AYS35R    		Everspin TechnologiesNVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM
    RoHS: Compliant    		0
    • 1:$12.1100
    • 10:$11.2200
    • 25:$10.9700
    • 50:$10.9100
    • 100:$9.6000
    • 250:$9.1300
    • 500:$9.0300
    • 1000:$8.9000
    • 1500:$8.4900
    MR0A16AYS35R
    DISTI # 841-MR0A16AYS35R    		NXP SemiconductorsRAM Miscellaneous 1-MB STANDALONE MRAM
    RoHS: Compliant    		0
      Bild Teil # Beschreibung
      MR0A16AVYS35

      Mfr.#: MR0A16AVYS35

      OMO.#: OMO-MR0A16AVYS35

      		 NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM
      MR0A16AYS35R

      Mfr.#: MR0A16AYS35R

      OMO.#: OMO-MR0A16AYS35R

      		 NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM
      MR0A16AVYS35R

      Mfr.#: MR0A16AVYS35R

      OMO.#: OMO-MR0A16AVYS35R

      		 NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM
      MR0A16AMYS35

      Mfr.#: MR0A16AMYS35

      OMO.#: OMO-MR0A16AMYS35

      		 NVRAM 1Mb 3.3V 64K x 16 35ns Parallel MRAM
      MR0A16AMYS35R

      Mfr.#: MR0A16AMYS35R

      OMO.#: OMO-MR0A16AMYS35R

      		 NVRAM 1Mb 3.3V 64K x 16 35ns Parallel MRAM
      MR0A16AVMA35

      Mfr.#: MR0A16AVMA35

      OMO.#: OMO-MR0A16AVMA35-EVERSPIN-TECHNOLOGIES

      		 IC RAM 1M PARALLEL 48FBGA
      MR0A16ACYS35

      Mfr.#: MR0A16ACYS35

      OMO.#: OMO-MR0A16ACYS35-EVERSPIN-TECHNOLOGIES

      		 NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM
      MR0A16AMA35R

      Mfr.#: MR0A16AMA35R

      OMO.#: OMO-MR0A16AMA35R-EVERSPIN-TECHNOLOGIES

      		 IC RAM 1M PARALLEL 48FBGA
      MR0A16AVYS35R

      Mfr.#: MR0A16AVYS35R

      OMO.#: OMO-MR0A16AVYS35R-EVERSPIN-TECHNOLOGIES

      		 NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM
      MR0A16AYS35R

      Mfr.#: MR0A16AYS35R

      OMO.#: OMO-MR0A16AYS35R-EVERSPIN-TECHNOLOGIES

      		 IC RAM 1M PARALLEL 44TSOP
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2000
      Menge eingeben:
      Der aktuelle Preis von MR0A16AYS35R dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      12,11 $
      12,11 $
      10
      11,22 $
      112,20 $
      25
      10,97 $
      274,25 $
      50
      10,91 $
      545,50 $
      100
      9,60 $
      960,00 $
      250
      9,13 $
      2 282,50 $
      500
      9,03 $
      4 515,00 $
      1000
      8,90 $
      8 900,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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