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MRF085HR5

MRF085HR5
Mfr. #:
MRF085HR5
Hersteller:
NXP Semiconductors
Beschreibung:
RF MOSFET Transistors High Ruggedness N--Channel
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MRF085HR5 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MRF085HR5 DatasheetMRF085HR5 Datasheet (P4-P6)MRF085HR5 Datasheet (P7-P9)MRF085HR5 Datasheet (P10-P11)
ECAD Model:
Mehr Informationen:
MRF085HR5 Mehr Informationen MRF085HR5 Product Details
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
Y
Polarität des Transistors:
Dualer N-Kanal
Technologie:
Si
Id - Kontinuierlicher Drainstrom:
210 mA
Vds - Drain-Source-Durchbruchspannung:
- 500 mV, 133 V
Gewinnen:
25.6 dB
Ausgangsleistung:
85 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
NI-650H-4
Verpackung:
Spule
Arbeitsfrequenz:
1.8 MHz to 1215 MHz
Serie:
MRF085H
Typ:
HF-Leistungs-MOSFET
Marke:
NXP Semiconductors
Anzahl der Kanäle:
2 Channel
Pd - Verlustleistung:
235 W
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
- 6 V, 10 V
Vgs th - Gate-Source-Schwellenspannung:
1.5 V
Teil # Aliase:
935351494178
Gewichtseinheit:
0 oz
Tags
MRF0, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
WIDEBAND RF POWER LDMOS TRANSISTOR, 85 W CW OVER 1.8-1215 MHZ, 50 V., REEL 13, REEL
***W
RF Power Transistor, 0.0018 to 1.215 GHz, 85 W, Typ. Gain in dB is 25.6 @ 520 MHz, 50 V, SOT1911-1, LDMOS
***ical
Trans RF MOSFET N-CH 133V 5-Pin NI-650H T/R
***i-Key
RF MOSFET LDMOS 50V NI-650H-4L
***hardson RFPD
RF POWER TRANSISTOR
***ment14 APAC
Prices include import duty and tax. TRANSISTOR, RF, N-CH, 133VDC, NI-650H-4L; Drain Source Voltage Vds:133VDC; Continuous Drain Current Id:-; Power Dissipation Pd:235W; Operating Frequency Min:1.8MHz; Operating Frequency Max:1.215GHz; RF Transistor Case:NI-650H; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (15-Jan-2019)
***nell
TRANSISTOR, RF, CA-N, 133VDC, NI-650H-4L; Tensione Drain Source Vds:133VDC; Corrente Continua di Drain Id:-; Dissipazione di Potenza Pd:235W; Frequenza Operativa Min:1.8MHz; Frequenza Operativa Max:1.215GHz; Case Transistor RF:NI-650H; No. di Pin:4Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Livello di Sensibilità all'Umidità (MSL):MSL 3 - 168 ore; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
Teil # Mfg. Beschreibung Aktie Preis
MRF085HR5
DISTI # V99:2348_18211873		NXP SemiconductorsPROTOTYPE50
  • 10:$127.5700
  • 1:$133.7600
MRF085HR5
DISTI # 568-13463-1-ND		NXP SemiconductorsRF MOSFET LDMOS 50V NI-650H-4L
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		10In Stock
  • 10:$132.7550
  • 1:$139.3500
MRF085HR5
DISTI # 568-13463-2-ND		NXP SemiconductorsRF MOSFET LDMOS 50V NI-650H-4L
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		On Order
  • 50:$126.1458
MRF085HR5
DISTI # 28953435		NXP SemiconductorsPROTOTYPE50
  • 10:$127.5700
  • 1:$133.7600
MRF085HR5
DISTI # MRF085HR5		Avnet, Inc.PROTOTYPE - Tape and Reel (Alt: MRF085HR5)
RoHS: Compliant
Min Qty: 50
Container: Reel		Americas - 0
  • 50:$133.1900
  • 100:$127.9900
  • 200:$122.9900
  • 300:$118.4900
  • 500:$116.1900
MRF085HR5
DISTI # 43AC3907		NXP SemiconductorsTRANSISTOR, RF, N-CH, 133VDC, NI-650H-4L,Drain Source Voltage Vds:133VDC,Continuous Drain Current Id:-,Power Dissipation Pd:235W,Operating Frequency Min:1.8MHz,Operating Frequency Max:1.215GHz,RF Transistor Case:NI-650H,No. ofRoHS Compliant: Yes30
  • 1:$130.7200
MRF085HR5
DISTI # 841-MRF085HR5		NXP SemiconductorsRF MOSFET Transistors High Ruggedness N--Channel
RoHS: Compliant		0
  • 50:$130.7200
MRF085HR5178NXP Semiconductors 
RoHS: Not Compliant		100
    MRF085HR5
    DISTI # MRF085HR5    		NXP SemiconductorsRF POWER TRANSISTOR
    RoHS: Compliant    		50
    • 1:$152.8500
    • 10:$141.2700
    • 25:$137.1200
    MRF085HR5
    DISTI # C1S537101647150    		NXP SemiconductorsMOSFETs
    RoHS: Compliant    		50
    • 10:$127.5700
    • 1:$133.7600
    MRF085HR5
    DISTI # 2805101    		NXP SemiconductorsTRANSISTOR, RF, N-CH, 133VDC, NI-650H-4L
    RoHS: Compliant    		30
    • 1:£109.0000
    • 5:£100.0000
    • 10:£91.9700
    MRF085HR5
    DISTI # 2805101    		NXP SemiconductorsTRANSISTOR, RF, N-CH, 133VDC, NI-650H-4L
    RoHS: Compliant    		30
    • 1:$218.4100
    • 5:$211.1300
    • 10:$201.0800
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    Verfügbarkeit
    Aktie:
    50
    Auf Bestellung:
    2033
    Menge eingeben:
    Der aktuelle Preis von MRF085HR5 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    145,96 $
    145,96 $
    5
    143,12 $
    715,60 $
    10
    138,40 $
    1 384,00 $
    25
    132,54 $
    3 313,50 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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