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FFSD10120A

FFSD10120A
Mfr. #:
FFSD10120A
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
Schottky Diodes & Rectifiers Silicon Carbide Schottky Diode
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FFSD10120A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FFSD10120A Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Schottky-Dioden und Gleichrichter
RoHS:
Y
Produkt:
Schottky-Siliziumkarbid-Dioden
Montageart:
SMD/SMT
Paket / Koffer:
D-PAK-3
Wenn - Vorwärtsstrom:
10 A
Vrrm - Repetitive Sperrspannung:
1200 V
Vf - Durchlassspannung:
1.45 V
Ifsm - Vorwärtsstoßstrom:
90 A
Aufbau:
Single
Technologie:
SiC
Ir - Gegenstrom:
200 uA
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
FFSD10120A
Verpackung:
Spule
Marke:
ON Semiconductor / Fairchild
Pd - Verlustleistung:
283 W
Produktart:
Schottky-Dioden und Gleichrichter
Werkspackungsmenge:
2500
Unterkategorie:
Dioden & Gleichrichter
Vr - Sperrspannung:
1200 V
Gewichtseinheit:
0.009184 oz
Tags
FFSD10, FFSD1, FFSD, FFS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 22A, 1200V V(RRM), Silicon Carbide, TO-252AA
***ical
Rectifier Diode Schottky SiC 1.2KV 22A 3-Pin(2+Tab) DPAK T/R
***rchild Semiconductor
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased powerdensity, reduced EMI, and reduced system size & cost.
1200V SiC Schottky Diodes
ON Semiconductor 1200V Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
Silicon Carbide Schottky Diodes
ON Semiconductor Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.  ON Semiconductor offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.
Solutions for Energy Infrastructure
ON Semiconductor Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. ON Semiconductor offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.
Teil # Mfg. Beschreibung Aktie Preis
FFSD10120A
DISTI # 26994630		ON SemiconductorSilicon Carbide Schottky Diode160000
  • 2500:$3.3910
FFSD10120A
DISTI # FFSD10120AOSCT-ND		ON SemiconductorDIODE SCHOTTKY 1.2KV TO252
RoHS: Not compliant
Min Qty: 1
Container: Cut Tape (CT)		2483In Stock
  • 1000:$3.2689
  • 500:$3.8760
  • 100:$4.5532
  • 10:$5.5570
  • 1:$6.1900
FFSD10120A
DISTI # FFSD10120AOSDKR-ND		ON SemiconductorDIODE SCHOTTKY 1.2KV TO252
RoHS: Not compliant
Min Qty: 1
Container: Digi-Reel®		2483In Stock
  • 1000:$3.2689
  • 500:$3.8760
  • 100:$4.5532
  • 10:$5.5570
  • 1:$6.1900
FFSD10120A
DISTI # FFSD10120AOSTR-ND		ON SemiconductorDIODE SCHOTTKY 1.2KV TO252
RoHS: Not compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$3.3827
FFSD10120A
DISTI # V36:1790_18470534		ON SemiconductorSilicon Carbide Schottky Diode0
  • 2500000:$2.8220
  • 1250000:$2.8240
  • 250000:$3.0140
  • 25000:$3.3380
  • 2500:$3.3910
FFSD10120A
DISTI # FFSD10120A		ON SemiconductorDiode SiC Schottky 1200V 22A 3-Pin TO-252 T/R - Tape and Reel (Alt: FFSD10120A)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$2.8900
  • 15000:$2.9900
  • 2500:$3.0900
  • 5000:$3.0900
  • 10000:$3.0900
FFSD10120A
DISTI # FFSD10120A		ON SemiconductorDiode SiC Schottky 1200V 22A 3-Pin TO-252 T/R (Alt: FFSD10120A)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€2.9900
  • 15000:€3.1900
  • 10000:€3.2900
  • 5000:€3.3900
  • 2500:€3.6900
FFSD10120A
DISTI # 512-FFSD10120A		ON SemiconductorSchottky Diodes & Rectifiers Silicon Carbide Schottky Diode
RoHS: Compliant		3847
  • 1:$6.4100
  • 10:$5.4400
  • 100:$4.7200
  • 250:$4.4800
  • 500:$4.0200
  • 1000:$3.4700
Bild Teil # Beschreibung
IRS21867STRPBF

Mfr.#: IRS21867STRPBF

OMO.#: OMO-IRS21867STRPBF

 Gate Drivers Hi CUR Iout = 4A robust HS/LS Gt Drvr
SMBJ5338B-TP

Mfr.#: SMBJ5338B-TP

OMO.#: OMO-SMBJ5338B-TP

 Zener Diodes 5W 5.1V
UJ3C065080B3

Mfr.#: UJ3C065080B3

OMO.#: OMO-UJ3C065080B3

 MOSFET 650V/80mOhm SiC CASCODE G3
FDP060AN08A0

Mfr.#: FDP060AN08A0

OMO.#: OMO-FDP060AN08A0

 MOSFET 75V 80a .6Ohms/VGS=1V
FDD86567-F085

Mfr.#: FDD86567-F085

OMO.#: OMO-FDD86567-F085

 MOSFET NMOS DPAK 60V 3.2 MOHM
ST-LINK/V2

Mfr.#: ST-LINK/V2

OMO.#: OMO-ST-LINK-V2

 Programmers - Processor Based STM8S STM32 Programr 5V USB 2.0 JTAG DFU
LAUNCHXL-F280049C

Mfr.#: LAUNCHXL-F280049C

OMO.#: OMO-LAUNCHXL-F280049C

 Development Boards & Kits - TMS320 C2000 F280049C PICCOLO LAUNCHPAD
IRS21867STRPBF

Mfr.#: IRS21867STRPBF

OMO.#: OMO-IRS21867STRPBF-INFINEON-TECHNOLOGIES

 Gate Drivers Hi CUR Iout = 4A robust HS/LS Gt Drv
ST-LINK/V2

Mfr.#: ST-LINK/V2

OMO.#: OMO-ST-LINK-V2-STMICROELECTRONICS

 Neu und Original
LAUNCHXL-F280049C

Mfr.#: LAUNCHXL-F280049C

OMO.#: OMO-LAUNCHXL-F280049C-TEXAS-INSTRUMENTS

 LAUNCHPAD TMS320F280049C EVAL BD
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1986
Menge eingeben:
Der aktuelle Preis von FFSD10120A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
6,41 $
6,41 $
10
5,44 $
54,40 $
100
4,72 $
472,00 $
250
4,48 $
1 120,00 $
500
4,02 $
2 010,00 $
1000
3,47 $
3 470,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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