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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| FMR23N57ESC DISTI # FE0000000004658 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: FMR202 OMO.#: OMO-FMR202-1190 |
Neu und Original |
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Mfr.#: FMR203 OMO.#: OMO-FMR203-1190 |
Neu und Original |
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Mfr.#: FMR21N50ES OMO.#: OMO-FMR21N50ES-1190 |
Power Field-Effect Transistor, 21A I(D),500V,0.27ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMR21N55G OMO.#: OMO-FMR21N55G-1190 |
Neu und Original |
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Mfr.#: FMR23N50E OMO.#: OMO-FMR23N50E-1190 |
Power Field-Effect Transistor, 23AI(D),500V,0.245ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET |
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Mfr.#: FMR23N50ES OMO.#: OMO-FMR23N50ES-1190 |
Power Field-Effect Transistor, 23A I(D),500V,0.245ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET |
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Mfr.#: FMR23N57E OMO.#: OMO-FMR23N57E-1190 |
Neu und Original |
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Mfr.#: FMR23N57E,23N57E OMO.#: OMO-FMR23N57E-23N57E-1190 |
Neu und Original |
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Mfr.#: FMR23N60E OMO.#: OMO-FMR23N60E-1190 |
Power Field-Effect Transistor,23AI(D),600V,0.28ohm, 1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMR28N50E OMO.#: OMO-FMR28N50E-1190 |
Power Field-Effect Transistor, 28AI(D),500V,0.19ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET |