SIR414DP-T1-GE3

SIR414DP-T1-GE3
Mfr. #:
SIR414DP-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 40V Vds 20V Vgs PowerPAK SO-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIR414DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIR414DP-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
50 A
Rds On - Drain-Source-Widerstand:
2.3 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
117 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
83 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Serie:
HERR
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
102 S
Abfallzeit:
9 ns
Produktart:
MOSFET
Anstiegszeit:
9 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
41 ns
Typische Einschaltverzögerungszeit:
14 ns
Teil # Aliase:
SIR414DP-GE3
Gewichtseinheit:
0.017870 oz
Tags
SIR414, SIR41, SIR4, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CH, 40V, 50A, POWERPAK SO; Transistor Polarity:N Channel; Continuous D
***ure Electronics
Single N-Channel 40 V 0.0028 Ohm SMT TrenchFET Power Mosfet - PowerPak-SO-8
***nell
MOSFET, N CH, 40V, 50A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:-
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
Teil # Mfg. Beschreibung Aktie Preis
SIR414DP-T1-GE3
DISTI # SIR414DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 40V 50A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$0.7796
SIR414DP-T1-GE3
DISTI # SIR414DP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 40V 50A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.8625
  • 500:$1.0409
  • 100:$1.3384
  • 10:$1.6660
  • 1:$1.8400
SIR414DP-T1-GE3
DISTI # SIR414DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 40V 50A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.8625
  • 500:$1.0409
  • 100:$1.3384
  • 10:$1.6660
  • 1:$1.8400
SIR414DP-T1-GE3
DISTI # SIR414DP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 40V 33A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR414DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.9389
  • 6000:$0.9119
  • 12000:$0.8749
  • 18000:$0.8499
  • 30000:$0.8269
SIR414DP-T1-GE3
DISTI # SIR414DP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 40V 33A 8-Pin PowerPAK SO T/R (Alt: SIR414DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€1.5309
  • 6000:€1.0979
  • 12000:€0.8899
  • 18000:€0.7869
  • 30000:€0.7529
SIR414DP-T1-GE3
DISTI # 05W6928
Vishay IntertechnologiesTrans MOSFET N-CH 40V 33A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 05W6928)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack
Americas - 0
  • 1:$1.6400
  • 25:$1.3600
  • 50:$1.2100
  • 100:$1.0500
  • 250:$0.9850
  • 500:$0.9190
  • 1000:$0.8750
SIR414DP-T1-GE3
DISTI # 781-SIR414DP-GE3
Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant
0
  • 1:$1.6400
  • 10:$1.3600
  • 100:$1.0500
  • 500:$0.9190
  • 1000:$0.8750
SIR414DPT1GE3Vishay Intertechnologies 
RoHS: Compliant
Europe - 1400
    SIR414DP-T1-GE3
    DISTI # TMOSP10946
    Vishay IntertechnologiesN-CH 40V 50A 2,8mOhm PPSO-8
    RoHS: Compliant
    Stock DE - 0Stock US - 0
    • 3000:$0.8870
    SIR414DP-T1-GE3
    DISTI # 2335397
    Vishay IntertechnologiesMOSFET, N CH, 40V, 50A, POWERPAK SO
    RoHS: Compliant
    0
    • 1:$2.6000
    • 10:$2.1600
    • 100:$1.6600
    • 500:$1.4500
    • 1000:$1.3900
    • 3000:$1.3900
    SIR414DP-T1-GE3
    DISTI # 2458562
    Vishay IntertechnologiesMOSFET, N CHANNEL, 40V, 50A, POWERPAK SO
    RoHS: Compliant
    0
    • 1:$2.6000
    • 10:$2.1600
    • 100:$1.6600
    • 500:$1.4500
    • 1000:$1.3900
    • 3000:$1.3900
    SIR414DP-T1-GE3
    DISTI # 2335397
    Vishay IntertechnologiesMOSFET, N CH, 40V, 50A, POWERPAK SO
    RoHS: Compliant
    1
    • 5:£1.4300
    • 25:£1.3000
    • 100:£1.0000
    SIR414DP-T1-GE3Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant
    Americas -
      Bild Teil # Beschreibung
      SIR414DP-T1-GE3

      Mfr.#: SIR414DP-T1-GE3

      OMO.#: OMO-SIR414DP-T1-GE3

      MOSFET 40V Vds 20V Vgs PowerPAK SO-8
      SIR414DP-T1-GE3

      Mfr.#: SIR414DP-T1-GE3

      OMO.#: OMO-SIR414DP-T1-GE3-VISHAY

      IGBT Transistors MOSFET 40V 50A 83W 2.8mohm @ 10V
      SIR414DP-T1-GE3-CUT TAPE

      Mfr.#: SIR414DP-T1-GE3-CUT TAPE

      OMO.#: OMO-SIR414DP-T1-GE3-CUT-TAPE-1190

      Neu und Original
      SIR414DP

      Mfr.#: SIR414DP

      OMO.#: OMO-SIR414DP-1190

      Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1985
      Menge eingeben:
      Der aktuelle Preis von SIR414DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,63 $
      1,63 $
      10
      1,35 $
      13,50 $
      100
      1,05 $
      105,00 $
      500
      0,92 $
      459,00 $
      1000
      0,76 $
      761,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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